G7N60
Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
G7N60
G7N60C3D
zener diode gem
HGT1S7N60C3DS9A
TA49121
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G7N60C3
Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTD7N60C3S,
HGTP7N60C3
HGTD7N60C3S
HGTP7N60C3
150oC.
G7N60C3
g7n60c
HGTD7N60C3S9A
LD26
RHRD660
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8508 zener
Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
8508 zener
g7N60C3D
g7n60c
HGT1S7N60C3DS9A
TA49121
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G7N60C3
Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state
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HGTD7N60C3S,
HGTP7N60C3
HGTD7N60C3S
HGTP7N60C3
150oC.
G7N60C3
G7N60
g7n60c
HGTD7N60C3S9A
RHRD660
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G7N60C3
Abstract: No abstract text available
Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTD7N60C3S,
HGTP7N60C3
HGTD7N60C3S
HGTP7N60C3
150oC.
G7N60C3
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g7N60C3D
Abstract: No abstract text available
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
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HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140nild
g7N60C3D
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G7N60C3D
Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
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HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140ns
G7N60C3D
G7N60C3
G7N60
DIODE 809 marking
HGTP7N60C3D
RHRD660
HGT1S7N60C3DS
HGT1S7N60C3DS9A
TA49121
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G7N60C3D
Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability
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HGTP7N60C3D,
HGT1S7N60C3D,
HGT1S7N60C3DS
O-220AB
140ns
150oC
O-262AA
HGT1S7N60C3D
G7N60C3D
G7N60
TA49121
HGT1S7N60C3DS
HGT1S7N60C3DS9A
HGTP7N60C3D
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g7n60c
Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC
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HGTD7N60C3,
HGTD7N60C3S,
HGTP7N60C3
O-220AB
140ns
150oC
O-251AA
HGTD7N60C3S
HGTP7N60C3
g7n60c
G7N60
G7N60C3
HGTD7N60C3
HGTD7N60C3S9A
RHRD660
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g7N60C3D
Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
Text: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and
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HGTP7N60C3D,
HGT1S7N60C3DS,
HGT1S7N60C3D
HGT1S7N60C3DS
HGT1S7N60C3D
150oC.
TA49115.
TA49057.
140ns
g7N60C3D
G7N60
G7N60C3
TA49115
TA49121
G7N60c
hyperfast diode reference guide
HGT1S7N60C3DS
HGT1S7N60C3DS9A
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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g7N60C3D
Abstract: G7N60 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
g7N60C3D
G7N60
HGT1S7N60C3DS9A
TA49121
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G7N60
Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTD7N60C3S,
HGTP7N60C3
HGTD7N60C3S
HGTP7N60C3
150oC.
G7N60
G7N60C3
G7N60C
HGTD7N60C3S9A
LD26
RHRD660
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G7N60C3D
Abstract: G7N60 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 LD26
Text: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
150oC.
TA49115.
TA49057.
G7N60C3D
G7N60
HGT1S7N60C3D
HGT1S7N60C3DS9A
TA49121
LD26
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g7N60C3D
Abstract: G7N60 G7N60C3 C 679 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c
Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = 25oC • • • • • EMITTER COLLECTOR GATE
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HGTP7N60C3D,
HGT1S7N60C3D,
HGT1S7N60C3DS
O-220AB
140ns
150oC
O-262AA
HGT1S7N60C3D
g7N60C3D
G7N60
G7N60C3
C 679
HGT1S7N60C3DS
HGT1S7N60C3DS9A
HGTP7N60C3D
TA49121
g7n60c
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igbt 600V
Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
Text: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP7N60C3D,
HGT1S7N60C3DS
HGTP7N60C3D
HGT1S7N60C3DS
TA49115.
TA49057.
igbt 600V
g7n60c
TA49121
G7N60C3D
50QL
HGT1S7N60C3D
HGT1S7N60C3DS9A
LD26
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7N60C3
Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C
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7N60C3D,
HGT1S7N60C3DS
O-22QAB
O-262AA
HGTP7N60C3D,
HGT1S7N60C3D
HGT1S7N60C3DS
-800-4-H
7N60C3
7N60C3D
S7N60
g7N60C3D
Zener Diode LT 432
diode lt 823
S7N60C3D
600VU
NT 407 F power transistor
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Untitled
Abstract: No abstract text available
Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS H A F R R IS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features • . • • • • JEDEC TO-220AB 14A, 600V at TC = +25°C 600V Switching SOA Capability
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HGTP7N60C3D,
HGT1S7N60C3D,
HGT1S7N60C3DS
O-220AB
140ns
O-262AA
HGT1S7N60C3D
1-800-4-HARRIS
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G7N60C
Abstract: 7N60C 627 DIODE 7N60 STA 933 D7N60
Text: HARRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 Features Packaging J E D E C TO-22QAB • 14A, 600V at Tc = 25 °C • 600V Sw itching SOA Capability • T y p i c a l F a ll T i m e . 1 4 0 n s a t T j = 1 S 0 ° C
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HGTD7N60C3,
HGTD7N60C3S,
HGTP7N60C3
O-22QAB
O-251
G7N60C
7N60C
627 DIODE
7N60
STA 933
D7N60
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g7N60C3D
Abstract: T0-262AA
Text: HGTP7N60C3D, HGT1S7N60C3D, j j ì HARRIS HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features • • • • • • JEDEC TO-22QAB 14A, 600V at Tc = +25°C 600V Switching SOA Capability
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OCR Scan
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HGTP7N60C3D,
HGT1S7N60C3D,
HGT1S7N60C3DS
O-22QAB
140ns
HGT1S7N60C3D
HGT1S7N60C3DS
1-800-4-HARRIS
g7N60C3D
T0-262AA
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G7N60C3
Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
Text: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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HGTD7N60C3S
HGTP7N60C3
TA49115.
HGTD7N60C3S,
HGTP7N60C3
G7N60C3
g7n60c
G7N60
TA49115
HGTD7N60C3S9A
LD26
RHRD660
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