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    HIGH VOLTAGE HIGH CURRENT POWER PNP TRANSISTORS Search Results

    HIGH VOLTAGE HIGH CURRENT POWER PNP TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE HIGH CURRENT POWER PNP TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1513

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SA1513 Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING


    Original     		2SA1513 2SA1513 PDF

    2SA1513

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1513 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING PIN


    Original     		2SA1513 2SA1513 PDF

    10 amp npn power transistors

    Abstract: pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833
    Text: PRODUCT announcement Low VCE SAT Power Transistors in a Tiny Leadless Module CTLT853-M833 6 Amp/200V (NPN) CTLT953-M833 5 Amp/140V (PNP) TLM833 Sample Devices features available • High Voltage (200V NPN, 140V PNP) upon request. • High Current (IC = 6.0A NPN, 5.0A PNP)


    Original     		CTLT853-M833 Amp/200V CTLT953-M833 Amp/140V TLM833 T-223 10 amp npn power transistors pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833 PDF

    2SA1513

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1513 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High current capability ・Low collector saturation voltage APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION


    Original     		2SA1513 2SA1513 PDF

    marking codes transistors a1 sot-89

    Abstract: transistor marking 551 sot-89 2STF2550 marking codes transistors sot-223 2STN2550 JESD97 P025H
    Text: 2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power SOT-89 and SOT-223 packages


    Original     		2STF2550 2STN2550 OT-89 OT-223 OT-89 OT-223 2STF2550 2STN2550 marking codes transistors a1 sot-89 transistor marking 551 sot-89 marking codes transistors sot-223 JESD97 P025H PDF

    2SB1145

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·For high current driver and power driver applications


    Original     		2SB1145 O-220F O-220F) -120V 2SB1145 PDF

    2SB1145

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications


    Original     		2SB1145 O-220F O-220F) -100A; -120V 2SB1145 PDF

    2SB1145

    Abstract: TO-220f Package base driver darlington
    Text: JMnic Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications PINNING PIN


    Original     		2SB1145 O-220F O-220F) -100A; -120V 2SB1145 TO-220f Package base driver darlington PDF

    marking chc

    Abstract: SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC
    Text: Transistors SMD Type PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage


    Original     		BC869 BC868 BC868-16 BC869-25 BC869-16 marking chc SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC PDF

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		2SB1347 2SD2029 2SB1347 2SD2029 PDF

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		2SB1317 2SD1975 2SB1317 2SD1975 PDF

    2SB825

    Abstract: 2SD1061
    Text: SavantIC Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter


    Original     		2SB825 O-220 2SD1061 2SB825 2SD1061 PDF

    2SB825

    Abstract: 2SD1061
    Text: Inchange Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter


    Original     		2SB825 O-220 2SD1061 2SB825 2SD1061 PDF

    NTE290A

    Abstract: NTE289A NTE290 NTE290AMCP NTE289AMP NTE290A PNP
    Text: NTE289A NPN & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: D High Breakdown Voltage: V(BR)CEO = 80V Min D High Current: IC = 500mA D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		NTE289A NTE290A 500mA 400mA, NTE289AMP NTE289A NTE290AMCP NTE290A NTE290 NTE290A PNP PDF

    Q62702-D1337

    Abstract: BDP948 BDP950 Q62702-D1335 947 SOT-223
    Text: BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Type Marking Ordering Code Pin Configuration


    Original     		BDP948, BDP950 Q62702-D1335 OT-223 Q62702-D1337 Nov-28-1996 Q62702-D1337 BDP948 BDP950 Q62702-D1335 947 SOT-223 PDF

    TIP147T

    Abstract: TIP142T
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS GENERAL PURPOSE SWITCHING


    Original     		TIP142T TIP147T TIP142T O-220 TIP147T. O-220 TIP147T PDF

    D45H1A

    Abstract: 1462, TRANSISTOR
    Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP D45H1A D45H1A transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage v c e o = 15V Min * High Current Power Transistors * DC Current Gain


    OCR Scan     		D45H1A 1462, TRANSISTOR PDF

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan     		2N6338 2N6340 2N6436 2N6437 2N6438 VCC-80V 2N6340 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION


    OCR Scan     		TIP142T TIP147T TIP142T O-220 TIP147T. PDF

    800V PNP

    Abstract: 2SC3507 2SC3577
    Text: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)


    OCR Scan     		2SG3577 2SC3507) 800V PNP 2SC3507 2SC3577 PDF

    JE253

    Abstract: JE243 JE233
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —


    OCR Scan     		MJE243, MJE253 JE253 JE243 JE233 PDF

    D45H1B

    Abstract: L-033 regulator
    Text: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP D45H1B D45H1B transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage V C e o = 10V Min * High Current Power Transistors


    OCR Scan     		D45H1B L-033 regulator PDF

    2SC3527

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS
    Text: 2SC3527 Power Transistors 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit • Features mm 5.2max. 15.5m ax • High speed switching • High collector-base voltage V cbo • Good linearity of DC current gain ( h FF.)


    OCR Scan     		2SC3527 50/60H 2SC3527 HIGH VOLTAGE high current POWER PNP TRANSISTORS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages . • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Pin Configuration II o 1= B II


    OCR Scan     		BDP947 BDP948, BDP950 Q62702-D1337 OT-223 Q62702-D1335 B35bQ5 D121D27 235b05 PDF