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    HVL147 Price and Stock

    Renesas Electronics Corporation HVL147M1PRF-E

    HVL147M1 - SILICON EPITAXIAL TRENCH PIN DIODE FOR ANTENNA SWITCHING - Bulk (Alt: HVL147M1PRF-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HVL147M1PRF-E Bulk 4 Weeks 2,506
    • 1 $0.1455
    • 10 $0.1455
    • 100 $0.1455
    • 1000 $0.1455
    • 10000 $0.1455
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    Rochester Electronics HVL147M1PRF-E 180,000 1
    • 1 $0.1455
    • 10 $0.1455
    • 100 $0.1368
    • 1000 $0.1237
    • 10000 $0.1237
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    Hokuriku Electric Industry Co Ltd HVL 1/4-7.5M-JTU

    Surface Mount Thin Film Chip Resistors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop HVL 1/4-7.5M-JTU Cut Tape 1,350
    • 1 -
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    • 100 $0.0156
    • 1000 $0.0145
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    HVL147 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HVL147 Renesas Technology Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL147 Renesas Technology Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL147 Renesas Technology Diodes> Switching Original PDF
    HVL147-E Renesas Technology Diode: Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL147M Renesas Technology Diodes> Switching Original PDF

    HVL147 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HVL147

    Abstract: No abstract text available
    Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0300 Rev.3.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147 REJ03G0393-0300 PXSF0002ZA-A HVL147

    Untitled

    Abstract: No abstract text available
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147M REJ03G0394-0100 Unit2607

    Untitled

    Abstract: No abstract text available
    Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0300 Rev.3.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147 REJ03G0393-0300 HVL147 PXSF0002ZA-A

    HVL147M

    Abstract: PUSF0002ZA-A
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147M REJ03G0394-0300 PUSF0002ZA-A HVL147M PUSF0002ZA-A

    HVL147

    Abstract: No abstract text available
    Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0200 Rev.2.00 Oct 20, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147 REJ03G0393-0200 temperature-900 Unit2607 HVL147

    Untitled

    Abstract: No abstract text available
    Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147 REJ03G0393-0100 Junction-900 Unit2607

    HVL147M

    Abstract: No abstract text available
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0200 Rev.2.00 Oct 20, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		PDF HVL147M REJ03G0394-0200 te-900 Unit2607 HVL147M

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    Untitled

    Abstract: No abstract text available
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP409KS REJ03G1501-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M RKP201KN REJ03G1501-0200

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    Untitled

    Abstract: No abstract text available
    Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP401KS REJ03G1345-0200 MFP12) MFP12 PUSF0012ZA-A RKP200KP HVL147M

    HVL147M

    Abstract: PUSF0002ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    HVL147M

    Abstract: PUSF0012ZA-A RKP408KS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP401KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1345-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP401KS REJ03G1345-0100 MFP12) RKP401KS MFP12 PUSF0012ZA-A RKP200 HVL147

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    r61505

    Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
    Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials


    Original     		PDF REJ13G0001-1900 r61505 R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    HVL147M

    Abstract: PUSF0012ZA-A RKP201KN RKP409KS
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP409KS REJ03G1501-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M RKP201KN REJ03G1501-0200 PUSF0012ZA-A RKP409KS

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    Ample Communications

    Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0027-0100/Rev Ample Communications HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP401KS REJ03G1345-0200 MFP12) RKP401KS MFP12 PUSF0012ZA-A RKP200KP HVL147M

    Untitled

    Abstract: No abstract text available
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP409KS REJ03G1501-0200 MFP12) RKP409KS MFP12 PUSF0012ZA-A HVL147M RKP201KN