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    KS0065 332

    Abstract: a 4504 KS0068 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065
    Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The KS0068 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology 100 QFP FUNCTION • Character type dot m atrix LCD driver & controller • Internal driver: 16 common and 60 segment signal output.


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    KS0068 KS0068 32kinds KS0068-00; KS0068-00 D02D721 KS0068-00) 71bm4B 0Q2Q722 KS0065 332 a 4504 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065 PDF

    KM428C257

    Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
    Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual


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    KM428C257 256KX 512x8 110ns 130ns 150ns 110mA 100mA 40-PIN 40/44-PIN KM428C257 XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung PDF

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


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    KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping PDF

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


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    KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30 PDF

    SSH60N10

    Abstract: 21133 250M SSH60N08
    Text: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    SSH60N10/08 SSH60N10 SSH60N08 21133 250M PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér


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    KM44C KM44C1003DJ G03416B 00341f PDF

    Untitled

    Abstract: No abstract text available
    Text: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)


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    KS7212 KS7212 KC73125 KC73129 06992MHz, 93750MHz 48-QFP-0707 GG37fl4M PDF

    KM44C4000B

    Abstract: No abstract text available
    Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    KM44C4000B KM44C4000BS PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port


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    KM428C64 KM428C64 130ns 150ns 180ns PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


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    KM44V16000AS 16Mx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: KA7522 ELECTR O NICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7522 is a electronic ballast controller for fluorescent inverter syst­ ems. It contains whole function in KA7521, current feed back and prehea­ ting time controlled by temperature sensing.


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    KA7522 KA7522 KA7521, KA7522D 12G471K 10D-11 KTD5-350 ib4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V


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    KA8513B KA8S13B 50MHz 1200bps KA8513BD 20-SS0P-225 455KHZ 10MAX 30-SS0P-375 PDF

    Untitled

    Abstract: No abstract text available
    Text: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor


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    KA7577 KA7577 Prot05 16-OIP-300A 16-DIP-300B D32fll2 20-SOP-300 20-SOP-375 PDF

    km62256alg

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C


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    KM62256Ã LPI/KM62256ALGI 62256ALPI; 28-pin 62256ALGI: 28-pln km62256alg PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 3 0 FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RüS on = 0 -8 ß ■ Lower Input Capacitance lD = -6 .5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VOS-2 0 0 V


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    SFW/I9630 0D4Q11Q ib4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary


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    ib4142 PDF

    8A1 op

    Abstract: KM44S16030A
    Text: KM44S16030A CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)


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    KM44S16030A KM44S16030A 10/AP 8A1 op PDF

    KMM374S803AT-G2

    Abstract: No abstract text available
    Text: NEW JEDEC SDRAM MODULE KM M374S803AT KMM374S803AT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S803AT is a 8M bit x 72 Synchronous - Performance range


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    KMM374S803AT M374S803AT 8Mx72 400mil 168-pin KMM374S803AT-G8 KMM374S803AT-G0 KMM374S803AT-G2 PDF

    KS88C4204

    Abstract: KS88C4208 samsung dmb 44-QFP-1010
    Text: KS88C4204 ELECTRONICS M icrocontroller DESCRIPTION The KS88C4204 and KS88C4208 single-chip microcontrollers are fabricated using an advanced CMOS process. The only difference between the two devices is ROM size: the "4204" has a 4-Kbyte ROM and the "4208” has an


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    88C4204 KS88C4204 KS88C4208 KS88C4204) KS88C4208) 208-byte 10-MHz KS88C4204 71b4142 samsung dmb 44-QFP-1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc


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    7Tb414E KM44C1012A KM44C1012A-10 130ns KM44C1012A-8 KM44C1012A-7 150ns KM44C1012A 180ns PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


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    KM416C1200A/A-L/A-F KM416C1200A-6/A-L6/A-F6 110ns KM416C1200A-7/A-L7/A-F7 130ns KM416C1200A-8/A-L8/A-F8 150ns cycles/16ms cycles/128ms PDF

    Untitled

    Abstract: No abstract text available
    Text: UNIVERSAL SPEECH NETWORK KA8603 INTRODUCTION The KA8603 can fulfill the standards o f other countries by changing the external com ponent. D ynam ic or piezoelectric type can be used with receiver. Each gain is controlled with AG C in accordance with the line current. The KA8603 can be operated down to


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    KA8603 KA8603 16-DIP-30c 20-SOP-300 20-SOP-375 ib4142 0Q3b232 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using


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    7Tb41M2 001113b 512Kx8) KM23C4Q00A 120ns 50jjA 32-pin 23C4000A) 23C4000AG) PDF

    3171S

    Abstract: No abstract text available
    Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND


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    KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S PDF