YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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Untitled
Abstract: No abstract text available
Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125
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YTS2222
-50QmA
500mA,
YTS2907
VCE-10V,
Ic-10mA
150mA
500mA
Ic-150tnA
150mA,
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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AACE
Abstract: 2SC5004
Text: V~P • 2 S ff liâ : « Ä C 4 il 9 9 5 ft a tK S Ì VHF/UHF : m m m , C3 td Æ fê cîj Wj /.-*• A tfe m * 1 M m H VcEo ï 8 Ic V e b o (ï ) 1 hFE bo ü Ä 50.00 120.00 250.00 8.00 1 1.00 H 'r Ic (mA) 50 f-r(GHz) 100 Cob(pF) îj(°C) 150 P G (dB)
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Ic20mA,
900MHz
2SC5004
AACE
2SC5004
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TIL78
Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
photo transistor til 78
photo transistor til78
sk 110 19 20n
2sc640 transistor
2SC286
2SC287
2SC430
400M
PMT222
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TIL78
Abstract: photo transistor til78 TIL78 em
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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TIL78
Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
MRD100
FSP165
BSW11
rt930
2N577
BC198A
BFY47
10G1051
D10B1055
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2SC1764
Abstract: 12ID 20ID N6050
Text: 2 s c 1764 O O * * Ä * 3 0 M H Ï- C 9 0 W P E P W i H i a * Æ is X Wbtitt, 9 O W ( P E P ) » t f - 3 0 M H i , VC C - 2 8 V Inter modulation D i s t o r t i o n a t Rated Power Output IMD - —3 0 dB (Max.) H i g h P o w e r G a i n G p g - 1 4.5 dB (M in - )
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2sc1764
28VtBÂ
30MHi
GpE-14
90WCPEP)
f-30MHi,
Tc-25Â
2sc1764
12ID
20ID
N6050
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UPC2712B
Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Text: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E
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GET-30698
NE89400
UPB584B
10Cycies
Page31
NE02100
Page35/37
UPC1677P
1678P
UPC2712B
UPB1509B
upc2709b
NE85608-L
NE68108
NE73408
UPB1508B
NE85608
NE41607
NE02103
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BF493
Abstract: BF492 BF491
Text: PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ; ABSOLUTE MAXIMUM RATINGS BF491 BF492
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BF491,
BF492,
BF493
BF491
BF492
BF493
500mA
625mW
12mW/Â
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2SC44
Abstract: 2SC440 9-GHz
Text: - 1 im » £ # ^ • 2 S C 4 4 0 Ê : VH F S S I S W g t i , fé & H 9 >b V c e o V 18 3 Ic(mA) 50 fr(MHz) 750. 00 m Pc(mW) 150 Cob(pF) 0.70 Tj ("C) 150 Cre(pF) 0. 45 m - m v 0 1 Ic bo S (V) 15 3 m m o : (g ® E E » ffo eo Ic(mA) 30 Pc(mW) 150 Tj (°C>
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2SC440
100MHz
2SC44
9-GHz
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D1302
Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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YTS2222
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA
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YTS2222
500mA
S-Q15.
500raA,
YTS2907
Ta-25
150mA
Ic-500mA
Ic-150mA
150mA,
YTS2222
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Untitled
Abstract: No abstract text available
Text: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS
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BF491j2
BF492,
BF493
BF491
BF492
BF493
500mA
625mW
12mW/Â
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TIL78
Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
2SA124
SMT102
2sa123
2sa155
AF101
2N534
MA520
maa 550
TF65
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Untitled
Abstract: No abstract text available
Text: op tolinks with photo-darlington detectors O C P -P C D 114 P a c k a g e OCP-PCD114/X-TR m Hi ; 4.60 [0.181] n, 0.40 [0.016] [oUi-Tii [. ] nr~ 0 047 PLS> - T - « / - A1NUU ano de Ma r k ✓ — PART NUMBER T A B L E D PART* /X /A /8 /c /O .A CTR X
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OCP-PCD114/X-TR
0C500V
IC-20mA,
100ohm
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