Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXQ30N60B3M XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) 600V 19A 1.85V 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ.M) OUTLINE Symbol
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IXXQ30N60B3M
IC110
125ns
30N60B3D1
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PDF
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g12n60d1
Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Text: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device
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Original
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HGTP12N60D1
O-220AB
500ns
150oC.
g12n60d1
AN7254
AN7260
HGTP12N60D1
G12N60D
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PDF
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STGF12NB60KD
Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
JESD97
STGB12NB60KD
STGP12NB60KD
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PDF
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st 393
Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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Original
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
st 393
JESD97
STGB12NB60KD
STGP12NB60KD
schematic diagram UPS
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PDF
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30N60B3D
Abstract: IXXH30N60B3 IXXH30N60
Text: Advance Technical Information IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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IXXH30N60B3
IC110
125ns
O-247
062in.
30N60B3D1
30N60B3D
IXXH30N60B3
IXXH30N60
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PDF
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IXXH30N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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IC110
IXXH30N60B3D1
125ns
O-247
IF110
30N60B3D1
IXXH30N60B3D1
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PDF
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30N60C3D
Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
Text: Advance Technical Information IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60C3D1
IC110
O-247
IF110
062in.
30N60C3D1
30N60C3D
IXXH30N60
30N60C3
ixxh30n60c3d1
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PDF
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30N60C3D
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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IC110
IXXH30N60C3D1
O-247
IF110
30N60C3D1
30N60C3D
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PDF
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30N60B3D
Abstract: 30N60B3 IXXH30N60B3D1
Text: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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Original
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IXXH30N60B3D1
IC110
125ns
O-247
IF110
062in.
30N60B3D1
30N60B3D
30N60B3
IXXH30N60B3D1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60C3
IC110
O-247
30N60C3D1
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HX-12A HIGH POWER SWITCHING USE CM600HX-12A ¡IC . 600A ¡VCES . 600V ¡Single ¡Flatbase Type / Insulated Package /
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CM600HX-12A
066K/W
11K/W
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM100RX-12A
85K/W
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM200RX-12A
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PDF
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DIODE EVP 28
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM100RX-12A
DIODE EVP 28
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM200RX-12A
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PDF
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cm150rx1
Abstract: CM150RX-12A
Text: MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CM150RX-12A ¡IC . 150A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM150RX-12A
cm150rx1
CM150RX-12A
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CM200RX-12A
Abstract: cm200rx
Text: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM200RX-12A
59K/W
CM200RX-12A
cm200rx
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CM300DX-12A
Abstract: 8e116
Text: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE CM300DX-12A ¡IC . 300A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /
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CM300DX-12A
13K/W
22K/W
CM300DX-12A
8e116
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE CM300DX-12A ¡IC . 300A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /
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CM300DX-12A
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GP19NC60SD
Abstract: JESD97 STGP19NC60SD
Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
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STGP19NC60SD
O-220
GP19NC60SD
JESD97
STGP19NC60SD
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PDF
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DIODE T25
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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Original
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CM100RX-12A
85K/W
DIODE T25
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400DX-12A HIGH POWER SWITCHING USE CM400DX-12A ¡IC . 400A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /
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CM400DX-12A
093K/W
16K/W
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PDF
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CM400Dx1
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400DX-12A HIGH POWER SWITCHING USE CM400DX-12A ¡IC . 400A ¡VCES . 600V ¡Dual ¡Flatbase Type / Insulated Package /
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CM400DX-12A
093K/W
16K/W
CM400Dx1
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CM150RX-12A ¡IC . 150A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM150RX-12A
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PDF
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