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    INGAAS HEMT MITSUBISHI Search Results

    INGAAS HEMT MITSUBISHI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30 Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-50 Rochester Electronics LLC CLF1G0035-50 - 50W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy

    INGAAS HEMT MITSUBISHI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz

    MGF4953A

    Abstract: mgf4953 s2v 92 S2V40
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A 12GHz MGF4953A mgf4953 s2v 92 S2V40

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    mgf4953a

    Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters

    MGF4951A

    Abstract: MGF4952A
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A

    Untitled

    Abstract: No abstract text available
    Text: Ｊｕｎｅ/2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.


    Original     		PDF MGF4953B MGF4953B 20GHz 3000pcs June/2006

    MGF4961

    Abstract: MGF4961B GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4961B super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. (unit: mm) 4.0±0.2 1.9±0.1 (1.05)


    Original     		PDF MGF4961B MGF4961B 20GHz GD-31 MGF4961 GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496

    low noise hemt transistor

    Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi

    top 261

    Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi

    MGF4941AL

    Abstract: MGF4941 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure


    Original     		PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｏｃｔ./2006 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4961B super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. (unit: mm) 4.0±0.2 1.9±0.1


    Original     		PDF MGF4961B MGF4961B 20GHz GD-31

    gD 679 transistor

    Abstract: MGF4316G MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures


    Original     		PDF MGF431xG MGF431xG 12GHz MGF4316G MGF4319G Par79 MGF4316G gD 679 transistor MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319

    MGF4931AM

    Abstract: GD-30 InGaAs HEMT mitsubishi
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF June/2004 MGF4931AM MGF4931AM 12GHz GD-30 InGaAs HEMT mitsubishi

    mgf4941al

    Abstract: MITSUBISHI electric R22 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure


    Original     		PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32

    MGF4921AM

    Abstract: transistor GaAs FET low noise 4Ghz
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｍar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.


    Original     		PDF MGF4921AM MGF4921AM transistor GaAs FET low noise 4Ghz

    4410D

    Abstract: F4410D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-


    OCR Scan     		PDF F4410D 4410D MGF4416D MGF4417D MGF4418D

    LOW HEMT

    Abstract: Hemt transistor
    Text: Jan./1999 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF MGF4951A MGF4951A 12GHz 12GHz lD-10mA LOW HEMT Hemt transistor

    n channel fet k 1118

    Abstract: MGF4316G MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431XG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers The herm etically sealed m etal-ceramic package assures


    OCR Scan     		PDF MGF431xG MGF431xG 12GHz MGF4316G MGF4319G MGF4316G n channel fet k 1118 MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617

    MGF4919

    Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		PDF F4910E F4914E F4918E F4919E MGF4910E GF4914E GF4919E MGF4919 mgf4918 mgf4914 MGF4910 gs 431 transistor

    mgf4953a

    Abstract: MGF4954A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF F4953A/MG F4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A MGF4953A June/2000 MGF4954A

    n channel fet k 1118

    Abstract: GS 069 MGF4319G mgf4316g
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transisfor is designed for use in L to K band amplifiers. The herm etically sealed metal-ceramic package assures


    OCR Scan     		PDF MGF431xG MGF431xG MGF4316G MGF4319G MGF4316G MGF4319G n channel fet k 1118 GS 069

    fet transistor a03

    Abstract: MGFC4419
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain


    OCR Scan     		PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419