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    Infineon Technologies AG IPP060N06NAKSA1

    MOSFET N-CH 60V 17A/45A TO220-3
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    Infineon Technologies AG IPP069N20NM6AKSA1

    TRENCH >=100V
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    Arrow Electronics IPP069N20NM6AKSA1 535 12 Weeks 1
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    Pentair Equipment Protection - Hoffman CIPP06

    19IN PROFILES ONE SIDE 350
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    DigiKey CIPP06 Bulk 1
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    Infineon Technologies AG IPP06N03LA

    MOSFET N-CH 25V 50A TO220-3
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    Rochester Electronics LLC IPP06CN10LG

    N-CHANNEL POWER MOSFET
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    Find more IPP06 price and stock on Findchips.com

    IPP06 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP060N06N Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO220-3 Original PDF
    IPP060N06NAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 17A TO220-3 Original PDF
    IPP062NE7N3G Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 80A TO220-3 Original PDF
    IPP062NE7N3GXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 75V 80A TO220-3 Original PDF
    IPP065N03L G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) (@4.5V): 9.5 mOhm; ID (max): 50.0 A; Original PDF
    IPP065N03LGXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO-220-3 Original PDF
    IPP065N04N G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO220-3 Original PDF
    IPP065N04NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO220-3 Original PDF
    IPP065N06LG Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPP065N06LG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 80A TO-220 Original PDF
    IPP065N06LGAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO-220 Original PDF
    IPP06CN10L G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (@4.5V): 7.9 mOhm; ID (max): 100.0 A; Original PDF
    IPP06CN10LGXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO220-3 Original PDF
    IPP06CN10N Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPP06CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPP06CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A TO-220 Original PDF
    IPP06CN10N G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO-220 Original PDF
    IPP06CN10NGXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO-220 Original PDF
    IPP06CNE8N Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPP06CNE8NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPP06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    065N06L

    Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		IPB065N06L IPP065N06L IPB063N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 063N06L IPP063N06L 065N06L PG-TO263-3-2 th58 D53A PDF

    IPP065N06L

    Abstract: d80 DIODE PG-TO220-3 IPP063N06L 065N06L IPB063N06L IPP065N06LG
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features V DS 60 V • For fast switching converters and sync. rectification R DS on ,max 6.5 m: • N-channel enhancement - logic level ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		IPB065N06L IPP065N06L IPB063N06L PG-TO263-3 PG-TO220-3 063N06L IPP063N06L 065N06L d80 DIODE PG-TO220-3 065N06L IPP065N06LG PDF

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3 PDF

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PDF

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 PDF

    065N04N

    Abstract: IPP065N04N JESD22 PG-TO220-3 J-STD-20
    Text: Type IPP065N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 6.5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level


    Original     		IPP065N04N PG-TO220-3 065N04N 065N04N JESD22 PG-TO220-3 J-STD-20 PDF

    065N06L

    Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
    Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated


    Original     		IPB065N06L IPP065N06L IEC61249-2-21 IPB063N06L P-TO263-3-2 PG-TO263-3-2 063N06L PG-TO220-3-1 065N06L IEC61249-2-21 IPP063N06L PG-TO263-3-2 d80 DIODE PDF

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG PDF

    06CN10L

    Abstract: JESD22 PG-TO220-3
    Text: IPP06CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP06CN10L PG-TO220-3 06CN10L 06CN10L JESD22 PG-TO220-3 PDF

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE PDF

    06n03la

    Abstract: IPB06N03LA Q67042-S4146 IPP06N03LA 06N03L
    Text: Preliminary data OptiMOSâ 2 Power-Transistor IPI06N03LA IPP06N03LA,IPB06N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1


    Original     		IPI06N03LA IPP06N03LA IPB06N03LA IPB06N03LA 06N03LA 06N03LA Q67042-S4148 Q67042-S4146 06N03L PDF

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220 PDF

    DA QG

    Abstract: No abstract text available
    Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C


    Original     		IPB065N06L IPP065N06L DA QG PDF

    060N06N

    Abstract: IPP060N06N NC45A Ipp060n06
    Text: Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP060N06N IEC61249-2-21 PG-TO220-3 060N06N 50K/W 060N06N IPP060N06N NC45A Ipp060n06 PDF

    06N03LA

    Abstract: IPB06N03LA IPI06N03LA IPP06N03LA
    Text: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4146 06N03LA 06N03LA IPB06N03LA IPI06N03LA IPP06N03LA PDF

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 PDF

    06N03LA

    Abstract: IPI06N03LA 06N03LA equivalent IPP06N03LA JESD22
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA 06N03LA PG-TO200-3-1 06N03LA IPI06N03LA 06N03LA equivalent IPP06N03LA JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 6.2 m: ID 50 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI06N03LA, IPP06N03LA PG-TO262-3 PG-TO220-3 IPI06N03LA PG-TO262-3 06N03LA 06N03LA PDF

    060N06N

    Abstract: IPP060N06N
    Text: Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 6.0 mW • Superior thermal resistance ID 45 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP060N06N IEC61249-2-21 PG-TO220-3 060N06N 50K/W 060N06N IPP060N06N PDF

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI06N03LA, IPP06N03LA PG-TO262-3-1 PG-TO220-3-1 IPI06N03LA PG-TO262-3-1 PG-TO200-3-1 Q67042-S4147 Q67042-S4148 PDF

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N PDF

    062NE7N

    Abstract: DIN 867 IPP062NE7N3 JESD22 PG-TO220-3
    Text: IPP062NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 6.2 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP062NE7N3 PG-TO220-3 062NE7N 062NE7N DIN 867 JESD22 PG-TO220-3 PDF

    06n03la

    Abstract: 06n03la datasheet, download SMD MARKING CODE transistor IPB06N03LA IPI06N03LA IPP06N03LA IPP06 59-MID 06N03L 06n03
    Text: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB06N03LA IPI06N03LA, IPP06N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4146 06N03LA 06n03la 06n03la datasheet, download SMD MARKING CODE transistor IPB06N03LA IPI06N03LA IPP06N03LA IPP06 59-MID 06N03L 06n03 PDF