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    IRF240 Search Results

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    IRF240 Price and Stock

    International Rectifier IRF240

    Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRF240 450 1
    • 1 $22.4135
    • 10 $22.4135
    • 100 $22.4135
    • 1000 $22.4135
    • 10000 $22.4135
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    Arrow Electronics IRF240 450 22 Weeks 1
    • 1 -
    • 10 $22.4135
    • 100 $22.4135
    • 1000 $22.4135
    • 10000 $22.4135
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    ES Components IRF240 7
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Infineon Technologies AG IRF240

    Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRF240 Bulk 100
    • 1 $23.08
    • 10 $22.77
    • 100 $21.98
    • 1000 $21.98
    • 10000 $21.98
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    New Jersey Semiconductor Products, Inc. IRF240

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF240 22,143 1
    • 1 $12.864
    • 10 $12.864
    • 100 $11.8735
    • 1000 $10.5485
    • 10000 $10.5485
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    New Jersey Semiconductor Products Inc IRF240

    MOSFET Transistor, N-Channel, TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF240 17,714
    • 1 $13.936
    • 10 $13.936
    • 100 $13.936
    • 1000 $11.256
    • 10000 $10.72
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    IRF240 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF240 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF240 International Rectifier HEXFET Power Mosfet Original PDF
    IRF240 Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFET Original PDF
    IRF240 Semelab FET, 2 VThreshold, ID 18 A Original PDF
    IRF240 Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRF240 Fairchild Semiconductor N-Channel Power MOSFETs, 18A, 150-200V Scan PDF
    IRF240 FCI POWER MOSFETs Scan PDF
    IRF240 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF240 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF240 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF240 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF240 Motorola Switchmode Datasheet Scan PDF
    IRF240 Motorola European Master Selection Guide 1986 Scan PDF
    IRF240 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF240 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF240 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF240 Unknown FET Data Book Scan PDF
    IRF240 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF240 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF240

    Abstract: mosfet IRF240
    Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF O-204AA/AE) IRF240 IRF240 mosfet IRF240

    power MOSFET IRF240

    Abstract: mosfet IRF240 IRF240 FET
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


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    PDF IRF240 IRF240" IRF240 IRF240-JQR-B IRF240SMD IRF240SMD-JQR-B O276AB) 600pF power MOSFET IRF240 mosfet IRF240 IRF240 FET

    mosfet to3

    Abstract: IRF240
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


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    PDF IRF240 00A/ms mosfet to3 IRF240

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRF240SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


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    PDF IRF240SMD 00A/ms 300ms,

    mosfet IRF240

    Abstract: mosfet to3 IRF240 LE17 power MOSFET IRF240
    Text: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


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    PDF IRF240 O-204AE) mosfet IRF240 mosfet to3 IRF240 LE17 power MOSFET IRF240

    IRF240SMD

    Abstract: No abstract text available
    Text: SEME IRF240SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


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    PDF IRF240SMD 00A/ms 300ms, IRF240SMD

    IRF240SM

    Abstract: No abstract text available
    Text: SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A 0.180W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


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    PDF IRF240SM 220SM 00A/ms 300ms, IRF240SM

    IRF240

    Abstract: No abstract text available
    Text: £>£.m.L-C.on.au.c.koi L/^r , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary


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    PDF O-204AA/AE) IRF240 IRF240

    mosfet IRF240

    Abstract: IRF242 IRF240 IRF241 IRF243
    Text: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O


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    PDF IRF240, IRF241, IRF242, IRF243 IRF243 08TAIN mosfet IRF240 IRF242 IRF240 IRF241

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


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    PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252

    IRF250a

    Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


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    PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* IRF250a MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20

    IRF240

    Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
    Text: • IRF243 IRF643 IRF242 IRF642 IRF241 IRF641 IRF240 IRF640 IRF240IRF241 IRF242 IRF243 IRF640 IRF641 IRF642 IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,


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    PDF IRF240 IRF241 IRF242 IRF243 IRF640 IRF641 IRF642 IRF643 IRF240 IRF241 IN4723 irf640 diodes IN4723 IRF242 IRF641 IRF642 IRF643

    IRF240R

    Abstract: IRF242R and18a IRF240 IRF241R IRF243R
    Text: Rugged Power MOSFETs File N u m b er 2003 IRF240R, IRF241R IRF242R, IRF243R Avalanche Energy Rated N-Channel Power MOSFETs TERMINAL DIAGRAM 16A and 18A, 200V, 150V ros on = 0 . 1 and 0.220 Features: Single pulse avalanche energy rated SOA Is power-dlsslpation lim ited


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    PDF IRF240R, IRF241R IRF242R, IRF243R 92CS-4263B IRF241R, IRF242R IRF243R IRF240R and18a IRF240 IRF241R

    Untitled

    Abstract: No abstract text available
    Text: IRF240, IRF241, I i F 2 4 3 h a r r is S E M I C O N D U C T O R 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 16A and 18A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF240, IRF241,

    mosfet IRF240

    Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


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    PDF IRF240 IRF241 IRF243 97A-02 O-204AE IRF240, mosfet IRF240 IRF243 power MOSFET IRF240

    IRF243

    Abstract: IRF240 IRF242 mosfet IRF240 IRF241
    Text: 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R \ Tfl DE 17Tbm4S DDOSCm 4 | IRF240/241/242/243 IN C 98 D 0 5 0 9 9 - — D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times


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    PDF IRF240/241/242/243 IRF240 IRF241 IRF242 IRF243 mosfet IRF240

    irf240

    Abstract: No abstract text available
    Text: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package


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    PDF IRF240 IRF241 IRF242 T0-204AE IRF243 IRF240, IRF241, irf240

    IRF240

    Abstract: D88E IRF2402
    Text: [? MiF3°KQ FUF IRF240.241 D88EN2,M2 18 AMPERES 200,150 VOLTS RDS ON = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


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    PDF IRF240 D88EN2 00A//usec, D88E IRF2402

    irf240

    Abstract: 1RF242 1RF240
    Text: SILICONIX INC l f iE i> 0254735 oom tm 4 • IRF240/241 /242/243 C T 'S ilt e o n ix JmW ■ incorporated N-Channel Enhancement Mode Transistors TO-2Q4AE TO-3 B O T T O M VIEW PRODUCT SUMMARY PART NUM BER V (BR)DSS (V) r DS(ON) (O) Id (A) IRF240 200 0.18


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    PDF IRF240/241 IRF240 IRF241 1RF242 IRF243 IRF240/241/242/243 T-39-13 1RF240

    IRF224

    Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
    Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250


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    PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221

    irf640

    Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
    Text: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power


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    PDF 34bTti74 IRF240-243/IRF640-643 IRF240 IRF241 IRF242 IRF243 O-220AB IRF640 IRF641 IRF642 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF243

    lg diode 88A

    Abstract: IRF240SM
    Text: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE


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    PDF IRF240SM TQ-220SM 300ms, lg diode 88A IRF240SM

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IRF240 RÆOO^@i L[IOÏ^(s [MDOi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 2 4 0 V dss RDS(on) Id 200 V 0.1 8 n 18 A . AVALAN C H E R UG G EDNESS TECHNO LO G Y . 100% AVALANCHE TESTED • REPETITIVE AVALANC HE DATA AT 100°C APPLICATIONS


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    PDF IRF240

    ED 83

    Abstract: No abstract text available
    Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)


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    PDF IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 ED 83