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    IRF511 MOSFET Search Results

    IRF511 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF511 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF510

    Abstract: IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441
    Text: IRF510, IRF511, IRF512, IRF513 Semiconductor 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF510, IRF511, IRF512, IRF513 IRF510 IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441

    Untitled

    Abstract: No abstract text available
    Text: IRF511 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF511

    IRF510

    Abstract: IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2
    Text: IRF510, IRF511, IRF512, IRF513 S E M I C O N D U C T O R 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF510, IRF511, IRF512, IRF513 IRF510 IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2

    MOSFET IRF 570

    Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
    Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 MOSFET IRF 570 IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola

    IRF510

    Abstract: IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET IRF512 RELAY HGS RF510 IRF513
    Text: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N -C H A N N EL E N H AN C E M E N T MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V


    OCR Scan     		PDF IRF510, IRF511, IRF512, IRF513 0V-100V IRF512 IFIF513 RF510 IRF510 IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET RELAY HGS RF510 IRF513

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    SSP60N06

    Abstract: irf630 irf640 SSP50N06 ssp15n06
    Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520


    OCR Scan     		PDF O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06

    IRFS12

    Abstract: IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet
    Text: 01 3075001 ODIÖSEM 1 |~~ 3875081 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18329 _ IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF DDlflaS11] IRF510, IRF511, IRF512, IRF513 0V-100V IRF512 IRF513 IRFS12 IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet

    irf510

    Abstract: IRF511 irf512 jrf512 TA17441
    Text: if* ? S IRF510, IRF511, IRF512, IRF513 S e m ico n d ucto r y 7 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Description Features 4.9A, and 5.6A, 80V and 100V High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF510, IRF511, IRF512, IRF513 RF510, RF512, RF513 irf510 IRF511 irf512 jrf512 TA17441

    IRF510 application note

    Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
    Text: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513


    OCR Scan     		PDF S54S2 IRF510 IRF511 IRF513 O-220AB C-189 IRF510, IRF511, IRF512, IRF513 IRF510 application note VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975

    IRF513

    Abstract: IRF510 TA17441 IRF511 IRF 513 IRf 334 IRF512
    Text: HARRIS I R F 5 1 , I R F 5 1 1 , S E M I C O N D U C T O R I R F 5 1 2 , I R F 5 1 3 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF510, IRF511, RF512, IRF513 IRF510 TA17441 IRF511 IRF 513 IRf 334 IRF512

    transistor irf510

    Abstract: IRF510 IRF510 MOSFET IRF510N OA116 IRF-510 D84BL2 IRF511 MOSFET IRF510 CC174
    Text: IRF510,511 D84BL2.K2 FU? HELD EFFECT POWER TRANSISTOR 4.0 AMPERES 100, 60 VOLTS FlDS ON = 0.6 n The IRF510,511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing G E’s advanced Power DMOS tech­ nology to achieve low on-resistance with excellent device


    OCR Scan     		PDF IRF510 D84BL2 IRF510, IRF510 Tc-25Â 100ms VGS-10V transistor irf510 IRF510 MOSFET IRF510N OA116 IRF-510 IRF511 MOSFET IRF510 CC174

    IRF511

    Abstract: IRF510 IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510
    Text: N-CHANNEL POWER MOSFETS IRF510/511 FEATURES • L o w e r R d s <o n • Improved inductive raggedness • Fast switching times • Rugged poiysiiicon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF510/511 IRF510 IRF511 71b414S IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510

    IRF510

    Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
    Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF511 IRF512 IRF513

    1rf510

    Abstract: 1RF51
    Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ


    OCR Scan     		PDF M3DE271 IRF510/511/512/513 IRF51OR/511R/512R/513R IRF510, IRF511, IRF512, IRF513 IRF510R, IRF511R, IRF512R 1rf510 1RF51

    1RF511

    Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
    Text: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*


    OCR Scan     		PDF IRF510/511/512/513 IRF510R/511R/512R/513R IRFS10, IRF511, IRF512, IRF513 IRF510R, 1RF511R, IRF512R IRF513R 1RF511 IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51

    IRF510

    Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
    Text: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area


    OCR Scan     		PDF IRF510/511/512/513 IRF510 IRF512 IRF513 IRF510 MOSFET irf510 ir 05b diode

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    IRFZ25

    Abstract: IRFZ12 50N06L IRFZ24 60N06 sp60n06
    Text: FUNCTION GUIDE POWER MOSFETs 1. SELECTION GUIDE TO-220 N-CHANNEL Part Number BVdss V ID(on)(A) RDS(on)( Q ) 50.00 5.90 8.00 7.20 14.00 15.00 15.00 25.00 25.00 30.00 35.00 35.00 35.00 60.00 0.30 0.30 0.20 0.12 0.15 0.10 0.07 0.07 0.05 0.04 0.035 0.028 0.018


    OCR Scan     		PDF O-220 IRFZ12 IRLZ10 IRFZ10 IRFZ22 IRLZ20 IRFZ20 IRLZ30 IRFZ32 IRFZ30 IRFZ25 50N06L IRFZ24 60N06 sp60n06

    MTP8N10

    Abstract: MTP25N10 mtp7n06 MTP20N10 MTP7N15 irf510 MTP12N10 MTP5N06 MTP5N15 MTP20N08
    Text: POWER TRAN SISTO RS — T M O S PLASTIC continued Plastic TM OS Power MOSFETS — TO-220AB (continued) C A S E 221A -02 rD S(on) (Ohm s) M ax (Amp) 150 2.4 1.25 20 2.5 1.5 MTP3N15 3 50 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 75 0.7 3.5 M TP7N15


    OCR Scan     		PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 mtp7n06 MTP20N10 irf510 MTP12N10 MTP5N06 MTP20N08

    GG88

    Abstract: T3901
    Text: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1


    OCR Scan     		PDF D03711B gg8888Ã T-39-01 GG88 T3901

    1RF710

    Abstract: No abstract text available
    Text: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710

    IRFZ25

    Abstract: IRF512 IRF51 IRFZ42 IRFZ30
    Text: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current


    OCR Scan     		PDF O-220 IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ15 IRFZ25 IRF512 IRF51

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF510/511 IRF510 IRF51 IRF513 IRF511 IRF512 G012150