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    IRF620 Price and Stock

    Vishay Siliconix IRF620PBF-BE3

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF620PBF-BE3 Tube 2,494 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.37
    • 1000 $0.48038
    • 10000 $0.42362
    		Buy Now

    Vishay Siliconix IRF620PBF

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF620PBF Tube 999 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.37
    • 1000 $0.48038
    • 10000 $0.42362
    		Buy Now
    RS IRF620PBF Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.86
    • 10000 $0.81
    		Get Quote
    New Advantage Corporation IRF620PBF 2,600 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.45
    • 10000 $0.42
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    Vishay Siliconix IRF620STRRPBF

    MOSFET N-CH 200V 5.2A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF620STRRPBF Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.86919
    • 10000 $0.82375
    		Buy Now
    IRF620STRRPBF Cut Tape 800 1
    • 1 $2.28
    • 10 $1.551
    • 100 $2.28
    • 1000 $2.28
    • 10000 $2.28
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    IRF620STRRPBF Digi-Reel 800 1
    • 1 $2.28
    • 10 $1.551
    • 100 $2.28
    • 1000 $2.28
    • 10000 $2.28
    		Buy Now

    Vishay Siliconix IRF620STRLPBF

    MOSFET N-CH 200V 5.2A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF620STRLPBF Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.86919
    • 10000 $0.82375
    		Buy Now

    Vishay Siliconix IRF620

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF620 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Quest Components IRF620 333
    • 1 $1.1
    • 10 $1.1
    • 100 $0.55
    • 1000 $0.55
    • 10000 $0.55
    		Buy Now
    Find more IRF620 price and stock on Findchips.com

    IRF620 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF620 Fairchild Semiconductor 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Original PDF
    IRF620 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF620 International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF620 Intersil 5.0A, 200V, 0.800 ?, N-Channel Power MOSFET Original PDF
    IRF620 STMicroelectronics OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    IRF620 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF620 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 6A TO-220 Original PDF
    IRF620 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF620 Transys Electronics Power MOSFET Original PDF
    IRF620 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A TO-220AB Original PDF
    IRF620 Fairchild Semiconductor N-Channel Power MOSFETs, 7A, 150-200V Scan PDF
    IRF620 FCI POWER MOSFETs Scan PDF
    IRF620 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF620 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF620 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. Scan PDF
    IRF620 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF620 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 5.9A, Pkg Iso TO-220 Fullpak Scan PDF
    IRF620 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF620 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF620 Motorola Switchmode Datasheet Scan PDF

    IRF620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF620

    Abstract: IRF620FP
    Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK


    Original     		PDF IRF620 IRF620FP O-220/FP O-220FP O-220 IRF620 IRF620FP

    Untitled

    Abstract: No abstract text available
    Text: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027


    Original     		PDF IRF620PbF O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF620 application

    Abstract: IRF620
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620FP IRF620 application

    IRF620 application

    Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620 application IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics

    IRF620

    Abstract: No abstract text available
    Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK


    Original     		PDF O-220/FP IRF620 IRF620FP O-220 O-220FP O-220 P011C

    Untitled

    Abstract: No abstract text available
    Text: PD - 94870 IRF620PbF • Lead-Free 1 IRF620PbF 2 IRF620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRF620PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF620S

    Abstract: No abstract text available
    Text: IRF620S Power MOSFET VDSS = 200V, RDS on = 0.80 ohm, ID = 5.2 A D Drain G Gate Source S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise IGSS Gate to Source Leakage Current VGS(th) Gate Threshold Voltage Gate Charge


    Original     		PDF IRF620S 25VDC, 100VDC, 160VDC, 10VDC IRF620S

    IRF620FI equivalent

    Abstract: IRF620 IRF620FI
    Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620FI equivalent IRF620 IRF620FI

    Untitled

    Abstract: No abstract text available
    Text: IRF620 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF620

    AN609

    Abstract: IRF620S SiHF620S 12727
    Text: IRF620S_RC, SiHF620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF620S SiHF620S AN609, 09-Mar-10 AN609 12727

    IRF621

    Abstract: IRF620
    Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF IRF620 IRF621 IRF622 IRF623 O-220

    D84CN2

    Abstract: IRF620 RF620
    Text: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF620 D84CN2 00A/jUsec, 300/js, 250MA, RF620

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623

    IRF620A

    Abstract: No abstract text available
    Text: IRF620A Advanced Power M O SFET FEATURES — 200 V R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = 0.8 £2 • L o w e r In p u t C a p a c ita n c e lD = 5 A ■ Im p ro v e d G a te C h a rg e D S S ■ A v a la n c h e ■ R u g g e d T e c h n o lo g y


    OCR Scan     		PDF IRF620A O-220 IRF620A

    diode fr

    Abstract: IRF620A
    Text: IRF620A Advanced Power MOSFET FEATURES = 200 V ^DS on = 0 .8 £2 B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A (M ax.) @ VDS= 200V


    OCR Scan     		PDF IRF620A O-220 diode fr IRF620A

    IRFP 620

    Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
    Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V


    OCR Scan     		PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024

    Untitled

    Abstract: No abstract text available
    Text: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2


    OCR Scan     		PDF IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723

    Untitled

    Abstract: No abstract text available
    Text: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF620

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 S G S -T H O M S O N ¡m e r a « 7 IR F620 IR F 620 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss IRF620 IRF620FI 200 V 200 V RDS on < 0.8 < 0.8 a a Id 6 A 4 A • TYPICAL RDS(on) = 0.55 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF IRF620 IRF620FI IRF620/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF620/621 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF620/621 IRF620 IRF621 7Tb4142