irf620
Abstract: IRF620FI
Text: SGS-THOMSON Z T IRF620 IRF620FI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI . • ■ . V dss RDS on 200 V 200 V 0.8 0.8 Id n a 6 A 4 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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IRF620
IRF620FI
IRF620FI
IRF620
IRF620/FI
IRF620/F
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PDF
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IRF620
Abstract: EQUIVALENT IRF620FI transistor irf620 IRF620FI
Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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Original
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IRF620
IRF620FI
100oC
O-220
ISOWATT220
IRF620
EQUIVALENT IRF620FI
transistor irf620
IRF620FI
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PDF
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IRF620FI equivalent
Abstract: IRF620 IRF620FI
Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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Original
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IRF620
IRF620FI
100oC
O-220
ISOWATT220
IRF620FI equivalent
IRF620
IRF620FI
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PDF
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IRF620 application
Abstract: IRF620
Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark
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Original
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IRF620
IRF620FP
O-220/TO-220FP
O-220
O-220FP
IRF620FP
IRF620 application
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PDF
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IRF620 application
Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark
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Original
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IRF620
IRF620FP
O-220/TO-220FP
O-220
O-220FP
IRF620 application
IRF620
IRF620FP
JESD97
Part Marking TO-220 STMicroelectronics
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PDF
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IRF620
Abstract: IRF620FP
Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK
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Original
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IRF620
IRF620FP
O-220/FP
O-220FP
O-220
IRF620
IRF620FP
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PDF
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IRF620
Abstract: No abstract text available
Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK
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Original
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O-220/FP
IRF620
IRF620FP
O-220
O-220FP
O-220
P011C
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PDF
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IRP623
Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
Text: - Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE
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OCR Scan
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IRF620,
IRF621,
IRF622,
IRF623
50V-200V
IRF622
IRF623
IRP623
IRP621
IRF620
IRF620 application
IRF621
TC 3162
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PDF
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IRF620
Abstract: IRF621 YT37 IRF622 IRF623
Text: _ 01 D e | 3fl7SDfll □□10341 18349 d T- 3 8 7 5 0 8 1 G E S O L I D S T A T E _ Standard Power MOSFETs 01E - - IRF620, IRF621, IRF622, IRF623
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OCR Scan
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IRF620,
IRF621,
IRF622,
IRF623
50V-200V
IRF622
IRF620
IRF621
YT37
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PDF
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IRF620
Abstract: TA9600 TB334 transistor irf620
Text: IRF620 Data Sheet January 2002 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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Original
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IRF620
TA9600.
IRF620
TA9600
TB334
transistor irf620
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PDF
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1RF620
Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
Text: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS
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OCR Scan
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IRF620
O-220
2SRF620S
1RF620
1RF620S
317H
RF620
SMD-220
smd diode marking 9 ba
ISD25
ScansUX1015
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PDF
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RD202
Abstract: No abstract text available
Text: International e Rectifier HEXFET® Power M O S F E T • • • • • I INR 4ASS4S2 0G14bTfl S14 PD-9.317H IRF620 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE D
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OCR Scan
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0G14bTfl
IRF620
O-220
SS452
DD147D3
RD202
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PDF
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IRF620
Abstract: SiHF620 SiHF620-E3
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF620,
SiHF620
O-220
O-220
18-Jul-08
IRF620
SiHF620-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF620,
SiHF620
O-220
12-Mar-07
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PDF
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IRF620 application
Abstract: TA9600 IRF620 TB334 transistor irf620
Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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Original
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IRF620
TA9600.
IRF620 application
TA9600
IRF620
TB334
transistor irf620
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PDF
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transistor irf620
Abstract: No abstract text available
Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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Original
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IRF620
TB334
IRF620
transistor irf620
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PDF
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Untitled
Abstract: No abstract text available
Text: , IJ nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Power MOSFET PRODUCT SUMMARY 200 VDS(V) RDS(on) VGS=10V (ty IRF620, SJHF620 0.80 Qg (Max.) (nC) 14 Qgs(nC) 3.0 7.9 Qgd (nC) Configuration
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Original
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IRF620,
SJHF620
O-220AB
O-220AB
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PDF
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IRF62
Abstract: No abstract text available
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)
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Original
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IRF620,
SiHF620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF62
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PDF
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IRF620
Abstract: SiHF620 SiHF620-E3
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)
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Original
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IRF620,
SiHF620
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF620
SiHF620-E3
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PDF
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IRF620PBF
Abstract: No abstract text available
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)
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Original
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IRF620,
SiHF620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF620PBF
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PDF
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IRF620 application
Abstract: No abstract text available
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)
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Original
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IRF620,
SiHF620
2002/95/EC
O-220AB
11-Mar-11
IRF620 application
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PDF
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irf620
Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Text: IRF620, IRF621, IRF622, IRF623 h a r r is 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF620,
IRF621,
IRF622,
IRF623
TA9600.
RF621,
RF622,
RF623
irf620
IRF620 HARRIS
IFR622
1RF621
irf623
irf622
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PDF
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transistor irf620
Abstract: No abstract text available
Text: / = 7 SGS-THOMSON M g[Mmi(mEMO(gS IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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OCR Scan
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IRF620
110x110
19x27
30x20
C-0078
transistor irf620
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)
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Original
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IRF620,
SiHF620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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