IRFD121

Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Contextual Info: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

1rfd9120

Abstract: IRFD9120 00LQ
Contextual Info: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =

Contextual Info: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

Contextual Info: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii

1RFD110

Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Contextual Info: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*

1RFD120

Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Contextual Info: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode

irfd123

Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
Contextual Info: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:

IRFD220

Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
Contextual Info: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode

IRF8C30

Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
Contextual Info: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)

mosfet k 2038

Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
Contextual Info: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V

Contextual Info: • 4302271 ODSMSTE 05? ■ HAS IRFD9220 IRFD9223 ¡3 H a r r is Avalanche Energy Rated P-Channel Power M O SFETs January 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0.45A and -0.6A, -150V and -200V TOP VIEW • rDS ON = 1-5H and 2.4CÎ • Single Pulse Avalanche Energy Rated

IRF09120

Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Contextual Info: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP

irfd210

Abstract: 440 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD210 IRFD213 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline |T I I TM OS

diode 222r

Abstract: MOSFET 4407 a circuit 4407
Contextual Info: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*

24v cfl ballast

Contextual Info: UC1872 UC2872 UC3872 y UNITRODE Resonant Lamp Ballast Controller FEATURES DESCRIPTION • The UC3872 is a resonant lamp ballast controller optimized for driving cold cathode fluorescent, neon, and other gas discharge lamps. The reso­ nant power stage develops a sinusoidal lamp drive voltage, and mini­

Contextual Info: R G L34A THRU SEMICONDUCTOR TECHNICAL DATA FORWARDINTERNATIONAL ELECTRONICS LUX RGL34J TECHNICAL SPECIFICATIONS O F SURFACE M O U N T FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 600 Volts CURRENT •0.5 Ampere FEATURES * Id ea l for s u rfa c e m o u n t e d a p p l i c a t i o n s

IRFD321

Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
Contextual Info: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V

IRFD311

Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
Contextual Info: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

3 phase inverter 180 degree conduction mode wave

Abstract: fx4054 FX4053 NMHR ETD49 12v 2K3906 h bridge irf740 inverter using irfz44 12v center tap transformer fx4054 core
Contextual Info: APPLICATION NOTE 960A A 250 Watt Current-Controlled SMPS With Synchronous Rectification H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs by Ft. Pearce, D. Grant Introduction This application note illustrates ways in w hich In te rn a tio n a l R ectifier’s

irfd113

Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
Contextual Info: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated

SE-TIME

Abstract: DO-213AA RGL34A RGL34D RGL34G RGL34J
Contextual Info: R G L34A THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LUX RGL34J TECHNICAL SPECIFICATIONS OF SURFACE MOUNT FAST RECOVERY RECTIFIER CURRENT -0.5 Ampere VOLTAGE RANGE - 50 to 600 Volts FEATURES ' Id e a l for s u r la c e m o u n t e d a p p lic a t io n s

relay ras 1210

Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
Contextual Info: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE