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    IRFP P CHANNEL Search Results

    IRFP P CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    IRFP P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		125OC 100ms Figure10. PDF

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		O-247 125OC 100ms Figure10. IRFP 640 IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460 PDF

    IRFP 640

    Abstract: IRFP254
    Text: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		O-247 IRFP 640 IRFP254 PDF

    IRFP 640

    Abstract: No abstract text available
    Text: MegaMOSTMFET IRFP 470 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 24 A I DM TC = 25°C, pulse width limited by TJM


    Original     		O-247 IRFP 640 PDF

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP
    Text: IRFP 250 Standard Power MOSFET VDSS = 200 V ID cont = 30 A Ω RDS(on) = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IRFP 360 VDSS = 400 V ID25 = 23 A RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient


    Original     		ID100 PDF

    IRFP 640

    Abstract: IRFP264 IRFP P CHANNEL
    Text: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		O-247 IRFP 640 IRFP264 IRFP P CHANNEL PDF

    IRFP 450 application

    Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
    Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    IRFP 640

    Abstract: ID100 irfp 360
    Text: MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient


    Original     		ID100 IRFP 640 ID100 irfp 360 PDF

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP 450 application
    Text: MegaMOSTMFET IRFP 470 VDSS = 500 V ID cont = 24 A RDS(on) = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		PDF

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP PDF

    IRFP 640

    Abstract: mosfet irfp 250 N
    Text: IXYS Standard Power MOSFET IRFP 450 VDSS ID cont P DS(on) 500 V 14 A 0.40 f t N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 500 V vDGR ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V ^D25 Tc =25°C 14 A Tc = 25° C, pulse width limited by TJM


    OCR Scan     		Cto150 O-247 00A/ns, pro45 IRFP 640 mosfet irfp 250 N PDF

    IRFP 450 application

    Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
    Text: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5


    OCR Scan     		450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150 PDF

    transistor irfp 150

    Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
    Text: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100


    OCR Scan     		150/FI-151/FI 152/FI-153/FI IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI transistor irfp 150 IRFP 150 transistor irfp IRFP P CHANNEL IRFP 3421A transistor irfp IRFP-150 PDF

    RFP450

    Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
    Text: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A


    OCR Scan     		FP450 IRFP450/FI IRFP451/FI 450/FI 452/FI 453/FI 451/FI RFP450 IRFP RE 40 IRFP 450 IRFP450FI PDF

    power switching with IRFP450 schematic

    Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
    Text: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS


    OCR Scan     		450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI power switching with IRFP450 schematic application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS PDF

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240 PDF

    TsE 151

    Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
    Text: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI


    OCR Scan     		7CJ2C1E37 150/FI-151/FI 152/FI-153/FI IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 TsE 151 transistor irfp IRFP 150fi IRFP P CHANNEL IRFP transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: inixYS MegaMOS FET IRFP 470 V DSS I D cont D DS(on) 500 V 24 A 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V OSS Tj =25°Cto150°C 500 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous ±20 V v GSM Transient


    OCR Scan     		Cto150 O-247AD PDF

    irfp 9240

    Abstract: irfp 240 IRFP p-channel irfp9240
    Text: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated


    OCR Scan     		9242/P IRFP9240, IRFP9241, IRFP9242 IRFP9243 92CS-43281 irfp 9240 irfp 240 IRFP p-channel irfp9240 PDF

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


    OCR Scan     		IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX PDF

    Untitled

    Abstract: No abstract text available
    Text: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C


    OCR Scan     		IRFP470 13onditions PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


    OCR Scan     		IRFP250 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V


    OCR Scan     		IRFP254 Q003flc PDF