IRGCC40KE
Abstract: IRGPC40K
Text: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
IRGPC40K
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IRGCC40KE
Abstract: IRGPC40K
Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
IRGPC40K
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91428
Abstract: IRGCC40FE IRGPC40F IRGCC40F
Text: PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40FE
IRGCC40FE
IRGPC40F
91428
IRGPC40F
IRGCC40F
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IRGCC40UE
Abstract: IRGPC40U
Text: PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40UE
IRGCC40UE
IRGPC40U
IRGPC40U
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IRGCC40
Abstract: IRGCC40UE IRGPC40U
Text: Previous Datasheet Index Next Data Sheet PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCC40UE
IRGCC40UE
IRGPC40U
IRGCC40
IRGPC40U
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91428
Abstract: IRGCC40FE IRGPC40F IGBT IRGPC40F 914-28 IRGCC40F IRGCC40
Text: Previous Datasheet Index Next Data Sheet PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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Original
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IRGCC40FE
IRGCC40FE
IRGPC40F
91428
IRGPC40F
IGBT IRGPC40F
914-28
IRGCC40F
IRGCC40
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IRGCC40KE
Abstract: IRGPC40K for IR IGBT die
Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
for IR IGBT die
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Untitled
Abstract: No abstract text available
Text: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage
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OCR Scan
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IRGCC40FE
IRGCC40FE
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PDF
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage
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OCR Scan
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P-947
IRGCC40KE
IRGCC40KE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage
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OCR Scan
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PM1426
IRGCC40UE
250pA,
250pA
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transistor tc 144
Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40
Text: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max
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OCR Scan
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IRGBC20
IRGBC26
IRGBC30
IRGBC36
IRGBC40
IRGBC46
-220AB
O-247AC
IRGPC40
IRGCC20
transistor tc 144
IRGBC46
IRGPC56
for IR IGBT die
D50 transistor
IGBT die
IRGCC50
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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OCR Scan
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100HF20-100HF160.
100JB05L-100JB12L.
10CTF10-10CTF40.
10CTQ140
10D05-10010.
10DF1100F8
10JF1-10JF4.
10JQ030-10JQ100.
1OJTF10-10JTF40
10MQ040-10MQ090.
IRF1644
12CTQ030-12CT0045
10JQ030-10JQ100
IRL0024
31D003-31D010
IRKT210-16
IRF1401
6cw 78
IRF140-143
IRFT003
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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OCR Scan
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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