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    IXFN 360 Search Results

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    IXFN 360 Price and Stock

    Littelfuse Inc IXFN360N15T2

    MOSFET N-CH 150V 310A SOT227B
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    DigiKey IXFN360N15T2 Tube 250 1
    • 1 $44.03
    • 10 $34.487
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    Newark IXFN360N15T2 Bulk 130 1
    • 1 $43.15
    • 10 $36.2
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    RS IXFN360N15T2 Bulk 8 Weeks 10
    • 1 -
    • 10 $53.34
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    IXYS Corporation IXFN360N10T

    MOSFET Modules 360 Amps 100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN360N10T 1,031
    • 1 $25.5
    • 10 $19.25
    • 100 $17.76
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    TME IXFN360N10T 287 1
    • 1 $26.69
    • 10 $24.84
    • 100 $21.13
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    Chip 1 Exchange IXFN360N10T 6,424
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    New Advantage Corporation IXFN360N10T 3,942 1
    • 1 -
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    • 100 $42.95
    • 1000 $42.95
    • 10000 $40.09
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    IXYS Corporation IXFN360N15T2

    MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN360N15T2 251
    • 1 $44.03
    • 10 $34.48
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    TME IXFN360N15T2 1
    • 1 $43.64
    • 10 $39.7
    • 100 $39.42
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    New Advantage Corporation IXFN360N15T2 240 1
    • 1 -
    • 10 $49.53
    • 100 $49.53
    • 1000 $46.23
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    Littelfuse Inc IXFN360N10T

    Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IXFN360N10T 274 1
    • 1 $25.7115
    • 10 $19.4868
    • 100 $17.7402
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    Arrow Electronics IXFN360N10T 274 27 Weeks 1
    • 1 $25.6082
    • 10 $19.4085
    • 100 $17.6689
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    Newark IXFN360N10T Bulk 300
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    RS IXFN360N10T Bulk 8 Weeks 10
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    IXFN 360 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN360N10T IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 360A SOT-227B Original PDF
    IXFN360N15T2 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 150V 310A SOT227 Original PDF

    IXFN 360 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S3 DIODE schottky

    Abstract: 100N10S1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


    Original     		100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky PDF

    S3 DIODE schottky

    Abstract: 100N1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


    Original     		100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky 100N1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		120N20 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		120N20 OT-227 PDF

    106N20

    Abstract: 90N20 IXFN 360 D-68623
    Text: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions


    Original     		90N20 106N20 90N20 200ns 106N20 O-264 D-68623 IXFN 360 PDF

    73N30

    Abstract: 1M300 "SOT-227 B" dimensions 6206 sot 89 D-68623 ixfk73n30
    Text: IXFK 73N30 IXFN 73N30 Preliminary Data VDSS = 300V ID25 = 73A HiPerFETTM Power MOSFET RDS on = 45mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		73N30 200ns O-264 D-68623 73N30 1M300 "SOT-227 B" dimensions 6206 sot 89 ixfk73n30 PDF

    120N20

    Abstract: DS965
    Text: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		120N20 OT-227 E153432 728B1 120N20 DS965 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN 120N20 HiPerFET TM Power MOSFETs VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		120N20 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		180N10 OT-227 E15000 100kHz 125OC PDF

    IXFN 180N10

    Abstract: 180n10
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		180N10 OT-227 100kHz 125OC IXFN 180N10 180n10 PDF

    ixfk73n30

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 73 N 30 IXFN 73 N 30 300 V 300 V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 73 A 45 mW 73 A 45 mW trr £ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		O-264 73N30 ixfk73n30 PDF

    IXFK100N20

    Abstract: 100N20 IXFK90N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original     		O-264 90N20 100N20 106N20 bK100N20 IXFN90N20 IXFN106N20 IXFK100N20 IXFK90N20 PDF

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original     		O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20 PDF

    IXFK90N20

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


    Original     		O-264 90N20 100N20 106N20 4000N20 IXFN106N20 IXFK90N20 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 90N30 VDSS ID25 RDS on = 300 V = 90 A = 33 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original     		90N30 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYS VDSS HiPerFET Power MOSFETs IXFK100N10 IXFN 150N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D ^025 DS on 100 V 100 A 12 mQ 100 V 150 A 12 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN vDSS


    OCR Scan     		IXFK00N10 IXFN150N10 O-264 to150 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: j ^ Y S ,X F K 3 N 3 0 IXFN 773N30 'reliminary Data VDSS = 300V lD25 HiPerFET Power MOSFET = 73A RDDS on S( , = 45mn t < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t TO-264 AA (1XFK) Test Conditions Maximum Ratings IXFK IXFN V DSS


    OCR Scan     		73N30 200ns O-264 15IXYS D-68623 IXFK73N30 PDF

    6 r 360

    Abstract: 106N20 100n20 IXFK90N20
    Text: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions


    OCR Scan     		IXFK90N20 IXFN100N20 IXFN106N20 O-264 90N20 100N20 106N20 Cto150 50Drain 6 r 360 PDF

    ixfk73n30

    Abstract: IXFN73N30
    Text: ÜIXYS VDSS HiPerFET Power MOSFETs IXFK73N30 IXFN 73N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 p DS on 300 V 73 A 45 mQ 300 V 73 A 45 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj =25°Cto150°C


    OCR Scan     		IXFK73N30 IXFN73N30 O-264 Cto150 OT-227 E153432 73N30 IXFN73N30 PDF

    RM338

    Abstract: qfl 289 106N20 IXFK90N20
    Text: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2


    OCR Scan     		IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289 PDF

    TBD40

    Abstract: ixfk73n30
    Text: HiPerFET Power MOSFETs IXFK 73 N 30 IXFN 73 N 30 p V DSS ^D25 300 V 300 V 73 A 73 A DS on 45 mfl 45 mfl N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj = 25°C to 150°C


    OCR Scan     		IXFK73N30 IXFN73N30 O-264 OT-227 E153432 TBD40 PDF

    Untitled

    Abstract: No abstract text available
    Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 90N30 Test Conditions V VDQH 300 V VQS VGSM Continuous i20 V Transient 130 V ^D25 Tc =25°C 90 A <OM Tc = 25° C, pulse width limited by TJM 360 A Tc =25°C 90 A Tc =25°C


    OCR Scan     		IXFN90N30 Cto150 OT-227 E153432 PDF

    ixfk73n30

    Abstract: No abstract text available
    Text: QIXYS IXFK73N30 IXFN73N30 HIPerFET Power MOSFETs DSS D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr t TO-264 AA (IXFK) Preliminary data Symbol v DSS v DGR vGS vygsm Test Conditions Maximum Ratings IXFK IXFN ^ = 25°C to 150°C


    OCR Scan     		IXFK73N30 IXFN73N30 O-264 E153432 OT-227 73N30 PDF