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    IXFR12N100 Search Results

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    IXYS Corporation IXFR12N100

    MOSFET N-CH 1000V 10A ISOPLUS247
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    IXYS Corporation IXFR12N100Q

    MOSFET N-CH 1000V 10A ISOPLUS247
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    IXFR12N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR12N100F IXYS N-channel Power MOSFETs Original PDF
    IXFR12N100Q IXYS 1000V HiPerFET power MOSFET Original PDF

    IXFR12N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N100

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1

    IXFH12N100Q

    Abstract: 10N100 6a diode 12N100Q IXFR12N100
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    10N100F

    Abstract: 10n100 98934
    Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N100 10N100 IXFR10N100

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


    OCR Scan     		PDF ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100

    L200k

    Abstract: IXFR12N100
    Text: in ix Y S AdvancedTechnical Information VDSS HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r R ^D25 12N100Q 1000 V 10 A ix f r io n io o q 1000 V 9A Electrically Isolated Back Surface trr <200 ns DS(on) 1.05 £2 1.20 Q N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    OCR Scan     		PDF 12N100Q ISOPLUS247TM to150 12N100 10N100 10N100 IXFR10N100 L200k IXFR12N100

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50