IXGH 32N90B2D1
Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
Text: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES
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32N90B2D1
O-247
IC110
IXGH 32N90B2D1
32N90B2D1
IXGH32N90B2D1
IF110
720v
32N90B2
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Untitled
Abstract: No abstract text available
Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200
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40N120A2
IC110
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IXGH12N100AU1
Abstract: IXGH12N100U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
IXGH12N100AU1
IXGH12N100U1
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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16N170A
16N170AH1
W1700
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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40N120A
Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2
Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200
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40N120A2
IC110
O-247
40N120A
IXGT 40N120A2
a 3150
40n120
40N120A2
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60B
32N60BD1
O-247
O-268
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16N170AH1
Abstract: 16N170A IXGT16N170A IXGH16N170AH1
Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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16N170A
16N170AH1
16N170AH1
16N170A
IXGT16N170A
IXGH16N170AH1
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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32N60B
Abstract: 32n60 32N60BD1 D25VF IXGH32N60B
Text: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60B
32N60BD1
O-247
O-268
32N60B
32n60
32N60BD1
D25VF
IXGH32N60B
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
728B1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60B
32N60BD1
O-247
O-268
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50n50c
Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N50B
50N60B
O-247
50N50
50N60
IXGH24N50BU1
IXGH24N60BU1
50n50c
50N60
IXGH20N60AU1
10N60A
IXGH20N60U1
G 50N60
G20N60
sot-227 footprint
A48A
24N60
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
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10N100U1
Abstract: RG150
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
RG150
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50n60
Abstract: 50N50B IXGH50N50B IXGH50N60B
Text: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC
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50N50B
50N60B
50N50
50N60
O-247
to150cC
O-268
50n60
IXGH50N50B
IXGH50N60B
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Untitled
Abstract: No abstract text available
Text: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90
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N100A
O-247
T0-204
4bflb22b
25N100
25N100A
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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IXGH17N100
Abstract: C5250
Text: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90
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17N100
17N100A
O-247AD
17N100A
17N100U1
IXGH17N100
C5250
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50N60
Abstract: G 50N60 IXGH50N50B
Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n
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50N50B
50N60B
50N50
50N60
O-247
G 50N60
IXGH50N50B
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IXGH32N60B
Abstract: No abstract text available
Text: HiPerFAST IGBT IXGH 32N60B IXGH 32N60BS vCES ^C25 v* CE sat = = = = 600 V 60 A 2.5 V 80 ns ÒE Maximum Ratings Symbol Test Conditions VCEs T j = 2 5 °C to 1 5 0 °C 600 V VCOR v GES T, = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V v GEM Transient
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32N60B
32N60BS
B2-73
IXGH32N60B
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