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    IXGH30N60C3D1 Price and Stock

    IXYS Corporation IXGH30N60C3D1

    IGBTs High Frequency Range 40khz C-IGBT w/Diod
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGH30N60C3D1 383
    • 1 $6.15
    • 10 $5.7
    • 100 $4.97
    • 1000 $4.23
    • 10000 $3.57
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    Future Electronics IXGH30N60C3D1 Tube 40 Weeks 300
    • 1 -
    • 10 -
    • 100 $4.4
    • 1000 $4.15
    • 10000 $4.15
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    TTI IXGH30N60C3D1 Tube 60 30
    • 1 -
    • 10 -
    • 100 $4.92
    • 1000 $4.92
    • 10000 $4.92
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    Littelfuse Inc IXGH30N60C3D1

    Transistor, Igbt, 600V, 60A, To-247 Rohs Compliant: Yes |Littelfuse IXGH30N60C3D1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXGH30N60C3D1 Bulk 161 1
    • 1 $6.57
    • 10 $6.57
    • 100 $5.24
    • 1000 $4.14
    • 10000 $3.49
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    IXGH30N60C3D1 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.43
    • 10000 $5.43
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    Quest Components IXGH30N60C3D1 240
    • 1 $14.487
    • 10 $14.487
    • 100 $8.9337
    • 1000 $7.9679
    • 10000 $7.9679
    Buy Now
    Chip1Stop IXGH30N60C3D1 11
    • 1 $3.47
    • 10 $3.47
    • 100 $3.47
    • 1000 $3.47
    • 10000 $3.47
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    IXGH30N60C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH30N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO247 Original PDF

    IXGH30N60C3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixgh30n60c3d1

    Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3

    IXGH30N60C3D1

    Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ


    Original
    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original
    PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter