Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGH36N60B3D1 Search Results

    SF Impression Pixel

    IXGH36N60B3D1 Price and Stock

    IXYS Corporation IXGH36N60B3D1

    IGBT 600V 250W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH36N60B3D1 Tube 30
    • 1 -
    • 10 -
    • 100 $3.93667
    • 1000 $3.93667
    • 10000 $3.93667
    Buy Now

    IXYS Integrated Circuits Division IXGH36N60B3D1

    IGBT DIS.DIODE SINGLE 36A 600V GENX3 TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGH36N60B3D1
    • 1 $5.34281
    • 10 $5.34281
    • 100 $4.8571
    • 1000 $4.8571
    • 10000 $4.8571
    Get Quote

    IXGH36N60B3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH36N60B3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 250W TO247AD Original PDF

    IXGH36N60B3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGH36N60B3D1

    Abstract: IF110
    Text: IXGH36N60B3D1 GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBT for 5 - 40kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V


    Original
    IXGH36N60B3D1 IC110 40kHz O-247 IF110 36N60B3 5-05-08-C IXGH36N60B3D1 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT w/ Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.8V IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600


    Original
    IC110 IXGH36N60B3D1 40kHz O-247 IF110 36N60B3 5-05-08-C PDF

    IXGH36N60B3D1

    Abstract: IF110
    Text: IXGH36N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600


    Original
    IXGH36N60B3D1 IC110 40kHz O-247 IF110 36N60B3 5-05-08-C IXGH36N60B3D1 IF110 PDF

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original
    PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF