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    IXYS Corporation IXGM40N60

    IGBT 600V 75A 250W TO-204AE
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    IXYS Corporation IXGM30N60

    IGBT 600V 50A 200W TO-204AE
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    IXYS Corporation IXGM20N60

    IGBT 600V 40A TO-204AE
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    IXYS Corporation IXGM20N60A

    IGBT 600V 40A TO-204AE
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    IXYS Corporation IXGM40N60A

    IGBT MODULE 600V 75A 250W TO204
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    IXGM Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGM10N100A IXYS Power MOSIGBTs Scan PDF
    IXGM10N50A IXYS Power MOSIGBTs Scan PDF
    IXGM10N60A IXYS Power MOSIGBTs Scan PDF
    IXGM10N80A IXYS Power MOSIGBTs Scan PDF
    IXGM10N90A IXYS Power MOSIGBTs Scan PDF
    IXGM17N100 IXYS 4.0V diode Original PDF
    IXGM17N100A IXYS 4.0V diode Original PDF
    IXGM20N100A IXYS Power MOSIGBTs Scan PDF
    IXGM20N50A IXYS Power MOSIGBTs Scan PDF
    IXGM20N60 IXYS Low VCE(sat) IGBT High speed IGBT Original PDF
    IXGM20N60A IXYS Low VCE(sat) IGBT High speed IGBT Original PDF
    IXGM20N60A IXYS Power MOSIGBTs Scan PDF
    IXGM20N80A IXYS Power MOSIGBTs Scan PDF
    IXGM20N90A IXYS Power MOSIGBTs Scan PDF
    IXGM25N100 IXYS 1000V, 50A diode Original PDF
    IXGM25N100A IXYS 1000V, 50A diode Original PDF
    IXGM25N100A IXYS Power MOSIGBTs Scan PDF
    IXGM25N80A IXYS Power MOSIGBTs Scan PDF
    IXGM25N90A IXYS Power MOSIGBTs Scan PDF
    IXGM30N50 IXYS IGBT 30 Amps, 500-600 Volts Scan PDF

    IXGM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30N60

    Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90


    Original     		Wei60A 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 N60A igbt 30N60 IXGH30N60U1 IXGH30N60AU1 IXGM30N60A PDF

    25N100

    Abstract: No abstract text available
    Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25


    Original     		N100A O-204 O-247 25N100g2 25N100 PDF

    40N60

    Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads


    Original     		13/10J 40N60A 40N60 O-204AE 40N60 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A PDF

    40n60 igbt

    Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads


    Original     		PDF

    20N60A

    Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90


    Original     		20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60 PDF

    17N100

    Abstract: 17N100A N100 17N100AU1
    Text: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90


    Original     		N100A 17N100 17N100A O-204AE 17N100 17N100U1 17N100A N100 17N100AU1 PDF

    30n60

    Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90


    Original     		30N60 30N60A O-204AE 30N60 30N60A 30N60U1 30N60AU1 igbt 30N60 30 N60A N60A IXGH30N60AU1 IXGH30N60A IXGH30N60U1 PDF

    25N100A

    Abstract: .25N100 25N100 N100
    Text: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90


    Original     		N100A 25N100 25N100A O-204AE 25N100A .25N100 25N100 N100 PDF

    IXYS 17N100

    Abstract: 17N100A 17N100 N100
    Text: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient


    Original     		N100A O-247 17N100 17N100A O-204AE 17N100 17N100U1 IXYS 17N100 17N100A N100 PDF

    20N60A

    Abstract: 20n60 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90


    Original     		20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a PDF

    transistor ixgh 25N100

    Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550
    Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25


    Original     		N100A O-204 O-247 25N100g2 transistor ixgh 25N100 .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550 PDF

    IXGH17N100

    Abstract: No abstract text available
    Text: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi


    OCR Scan     		IXGH/IXGM17N100 IXGH/IXGM17 N100A O-247 IXGH17N100 PDF

    20N50A

    Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
    Text: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc


    OCR Scan     		IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20N50A 20n50 f sss 20n60 sss 20n60 PDF

    17N10

    Abstract: No abstract text available
    Text: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90


    OCR Scan     		IXGH/IXGM17 N100A O-247 O-204 O-247 17N100 17N100U1 17N100AU1 17N10 PDF

    wabash

    Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
    Text: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss


    OCR Scan     		IXGH25N80, IXGM25N80, IXGH25N80 IXGM25N80 IXGH25N90 IXGH25N100 IXGM25N90 IXGM25N100 wabash 25N80A LHi 978 25n80 25N100 25N90 PDF

    40n50

    Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
    Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75


    OCR Scan     		50kHz 40n50 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90


    OCR Scan     		N100A O-247 T0-204 4bflb22b 25N100 25N100A PDF

    30n60u

    Abstract: 30N60A ixgh30n60a IXGM30N60
    Text: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms


    OCR Scan     		O-247 30N60U1 30N60AU1 4bflb22b 30n60u 30N60A ixgh30n60a IXGM30N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90


    OCR Scan     		O-247 DDD3S72 PDF

    20n50

    Abstract: 20N50A IXGH20N50 c 20n50
    Text: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s


    OCR Scan     		IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20n50 20N50A c 20n50 PDF

    20n80

    Abstract: 20N90 20N80A 20N100
    Text: 4686226 I X Y S CORP ¡J3 ß T | MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r


    OCR Scan     		IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100 PDF

    40N60A

    Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt
    Text: : Low VCE sat IGBT1 w High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V Transient ±30 V vCGR vGES vGEM Maximum Ratings 'c25 Tc = 25°C, limited by leads


    OCR Scan     		O-247 O-204 4fciflLi25b 40N60 40N60A 40N60A IXGH40N60 743e 40n60 igbt AT/40n60 igbt PDF

    30N50A

    Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5
    Text: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)


    OCR Scan     		IXGH30N50, IXGM30N50, IXGH30NS0 IXGM30N50 IXGH30N60 IXGM30N60 30N50A 30n60 to-220 30N50 30N60 IXGH30N50 IXGM30N50 wabash 30n5 PDF

    4on60

    Abstract: B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60
    Text: VCES IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Low VCE sat IGBT High speed IGBT »C25 75 A 75 A 600 V 600 V V " CE(sat) 2.5 V 3.0 V Not for new designs Symbol Test Conditions Maximum Ratings v CE S ^ = 2 5 °C to 1 5 0 °C 600 V VCo„ ^ = 25°C to 150°C; HGE = 1 M fi


    OCR Scan     		O-247 B2-88 40NG0 40N60A B2-89 4on60 B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60 PDF