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    IXKR Search Results

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    IXKR Price and Stock

    Littelfuse Inc IXKR47N60C5

    MOSFET N-CH 600V 47A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKR47N60C5 Tube 111 1
    • 1 $23.17
    • 10 $23.17
    • 100 $15.78233
    • 1000 $15.78233
    • 10000 $15.78233
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    Verical IXKR47N60C5 1,260 1
    • 1 $23.47
    • 10 $23.47
    • 100 $19.72
    • 1000 $16.05
    • 10000 $16.05
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    Arrow Electronics IXKR47N60C5 1,260 32 Weeks 1
    • 1 $23.47
    • 10 $23.47
    • 100 $19.72
    • 1000 $16.05
    • 10000 $16.05
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    Chip1Stop IXKR47N60C5 1,620
    • 1 $23.47
    • 10 $23.47
    • 100 $17.87
    • 1000 $16.05
    • 10000 $16.05
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    Littelfuse Inc IXKR40N60C

    MOSFET N-CH 600V 38A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKR40N60C Tube 14 1
    • 1 $23.78
    • 10 $23.78
    • 100 $16.294
    • 1000 $16.294
    • 10000 $16.294
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    IXYS Corporation IXKR25N80C

    MOSFET N-CH 800V 25A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKR25N80C Tube 30
    • 1 -
    • 10 -
    • 100 $20.88033
    • 1000 $20.88033
    • 10000 $20.88033
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    Mouser Electronics IXKR25N80C
    • 1 $25.19
    • 10 $22.38
    • 100 $20.88
    • 1000 $20.88
    • 10000 $20.88
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    Newark IXKR25N80C Bulk 1
    • 1 -
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    TME IXKR25N80C 1
    • 1 $28.89
    • 10 $22.93
    • 100 $20.62
    • 1000 $20.62
    • 10000 $20.62
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    IXYS Corporation IXKR40N60C

    MOSFETs 40 Amps 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXKR40N60C 147
    • 1 $25.41
    • 10 $24.63
    • 100 $21.49
    • 1000 $18.72
    • 10000 $18.72
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    TTI IXKR40N60C Tube 30
    • 1 -
    • 10 -
    • 100 $18.91
    • 1000 $16.68
    • 10000 $16.68
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    TME IXKR40N60C 1
    • 1 $24.48
    • 10 $24.48
    • 100 $21.03
    • 1000 $18.57
    • 10000 $18.57
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    IXYS Corporation IXKR47N60C5

    MOSFETs 47 Amps 600V 0.045 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXKR47N60C5 25
    • 1 $24.87
    • 10 $24.62
    • 100 $16.66
    • 1000 $15.78
    • 10000 $15.78
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    Bristol Electronics IXKR47N60C5 30
    • 1 -
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    Quest Components IXKR47N60C5 24
    • 1 $26.1164
    • 10 $26.1164
    • 100 $23.5048
    • 1000 $23.5048
    • 10000 $23.5048
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    TTI IXKR47N60C5 Tube 30
    • 1 -
    • 10 -
    • 100 $16.31
    • 1000 $15.94
    • 10000 $15.94
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    TME IXKR47N60C5 13 1
    • 1 $28.34
    • 10 $22.6
    • 100 $20.29
    • 1000 $20.29
    • 10000 $20.29
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    IXKR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXKR25N80C IXYS N-channel Power MOSFETs Original PDF
    IXKR40N60 IXYS Original PDF
    IXKR40N60C IXYS 600V coolMOS power MOSFET Original PDF
    IXKR47N60C5 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A ISOPLUS247 Original PDF

    IXKR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080225a

    47n60

    Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b 47n60 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5

    Untitled

    Abstract: No abstract text available
    Text: IXKR 40N60C COOLMOS * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 ISOPLUS247 O-247

    IXKR25N80C

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432


    Original     		PDF 25N80C 125mW 247TM ISOPLUS247TM E153432 ISOPLUS247 O-247 IXKR25N80C

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original     		PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    75n60

    Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
    Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved


    Original     		PDF ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c

    CoolMOS Power Transistor

    Abstract: ISOPLUS247 IXKR25N80C
    Text: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432


    Original     		PDF ISOPLUS247TM 25N80C 247TM E153432 CoolMOS Power Transistor ISOPLUS247 IXKR25N80C

    40N60C

    Abstract: ISOPLUS247
    Text: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol


    Original     		PDF ISOPLUS247TM 40N60C 247TM E153432 40N60C ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60 VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 40N60 247TM E153432

    40N60C

    Abstract: ISOPLUS247 ISOPLUS247TM ixkr 40n60c IXKR40N60C
    Text: IXKR 40N60C CoolMOS 1 Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on) 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 O-247 20080523a 40N60C ISOPLUS247 ixkr 40n60c IXKR40N60C

    25N80C

    Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432


    Original     		PDF 25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80

    Untitled

    Abstract: No abstract text available
    Text: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM


    Original     		PDF 47N60C5 ISOPLUS247TM E72873 20080523b

    Untitled

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432


    Original     		PDF 25N80C ISOPLUS247â E153432 20080526a

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D