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    IXLF19N250 Search Results

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    IXLF19N250 Price and Stock

    IXYS Corporation IXLF19N250A

    IGBT 2500V 32A 250W I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXLF19N250A Tube 23 1
    • 1 $44.82
    • 10 $44.82
    • 100 $35.2304
    • 1000 $35.2304
    • 10000 $35.2304
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    Mouser Electronics IXLF19N250A
    • 1 $44.82
    • 10 $44.82
    • 100 $43.24
    • 1000 $43.24
    • 10000 $43.24
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    Newark IXLF19N250A Bulk 218 1
    • 1 $52.99
    • 10 $47.27
    • 100 $41.44
    • 1000 $41.44
    • 10000 $41.44
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    TTI IXLF19N250A Tube 25
    • 1 -
    • 10 -
    • 100 $46.97
    • 1000 $46.97
    • 10000 $46.97
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    TME IXLF19N250A 15 1
    • 1 $62.5
    • 10 $49.72
    • 100 $44.58
    • 1000 $44.58
    • 10000 $44.58
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    ComSIT USA IXLF19N250A 6
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    IXYS Integrated Circuits Division IXLF19N250A

    IGBT DIS.SINGLE 32A 2500V I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXLF19N250A
    • 1 $61.82353
    • 10 $61.82353
    • 100 $57.779
    • 1000 $57.779
    • 10000 $57.779
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    IXLF19N250 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXLF19N250A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 32A 250W I4PAC Original PDF
    IXLF19N250A IXYS 2500V high voltage IGBT Original PDF
    IXLF19N250A IXYS IGBT HIGH VOLTAGE 2500V 32AMP Original PDF

    IXLF19N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXLF19N250A

    Abstract: No abstract text available
    Text: IXLF 19N220A IXLF 19N250A IC25 = 32 A VCES = 2200/2500 V VCE sat = 3.2 V tf = 50 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXLF 19N220A IXLF 19N250A VGES IC25 IC90


    Original     		PDF 19N220A 19N250A 19N250A IXLF19N250A IXLF19N250A

    IGBT 4000V

    Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
    Text: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of


    Original     		PDF 000V/40A 2006--IXYS IXEL40N400. IGBT 4000V isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    19n250

    Abstract: IXLF19N250 IXLF19N250A 19N25 ixlf 19n250a 19n250a E72873 high voltage igbt 19N2 IXLF19N
    Text: IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE sat = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C


    Original     		PDF 19N250A IXLF19N250A 19n250 IXLF19N250 IXLF19N250A 19N25 ixlf 19n250a 19n250a E72873 high voltage igbt 19N2 IXLF19N

    IXLF19N250

    Abstract: 19N250
    Text: IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE sat = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C


    Original     		PDF 19N250A IXLF19N250A IXLF19N250 19N250

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    IXAN0013

    Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


    Original     		PDF IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter

    IXLF19N250A

    Abstract: 19n250 IXLF19N250 19N2 19N250A E72873
    Text: IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE sat = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C


    Original     		PDF 19N250A IXLF19N250A IXLF19N250A 19n250 IXLF19N250 19N2 19N250A E72873

    IXLF19N250A

    Abstract: No abstract text available
    Text: IXLT 19N250A Symbol Conditions VCES TVJ = 25°C to 150°C VCES = 2500 V IC25 = 32 A VCE sat = 3.9 V IXLT 19N250A High Voltage IGBT Maximum Ratings VGES VGEM IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH


    Original     		PDF 19N250A O-268 IXLF19N250A IXLF19N250A

    IXLF19N250A

    Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a
    Text: 2 5 0 0 V / 4 0 0 0 V V E RY H I G H V O LTA G E V H V I G B T S - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F SUMMARY TABLE 2500V/4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH VOLTAGE APPLICATIONS


    Original     		PDF 500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 ISOPLUS247 IXFR55N50 IXFX55N50 device xray generators Igbts guide IGBT 1500V 40a

    19N220A

    Abstract: No abstract text available
    Text: IXLF 19N220A IXLF 19N250A IC25 = 32 A VCES = 2200/2500 V VCE sat = 3.2 V tf = 50 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXLF 19N220A IXLF 19N250A VGES IC25 IC90


    Original     		PDF 19N220A 19N250A 19N250A IXLF19N250A

    mj350

    Abstract: TF010
    Text: High Voltage IGBT IC25 = 32 A VCES = 2500 V VCE sat = 3.9 V IXLV 19N250AS PLUS220SMD G IGBT E Symbol Conditions V CES TVJ = 25°C to 150°C Maximum Ratings VGES VGEM IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH


    Original     		PDF 19N250AS PLUS220SMD IXLF19N250A mj350 TF010

    mosfet d408

    Abstract: schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


    Original     		PDF IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; mosfet d408 schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120