M27C4002
Abstract: JLCC44W PLCC44 Q0-Q15
Text: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.
|
Original
|
PDF
|
M27C4002
24sec.
M27C4002
JLCC44W
PLCC44
Q0-Q15
|
TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
PDF
|
M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
|
FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
PDF
|
M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
|
PLCC32
Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Text: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.
|
Original
|
PDF
|
FLNEWOTP/1098
286-CJ103
PLCC32
M27C
M27W101
M27W102
M27W201
M27W401
M27W402
M27W512
M27W801
TSOP32
|
GL 6201
Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Text: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.
|
Original
|
PDF
|
D-90449
FLNEWOTP/0699
GL 6201
PLCC32
M27C
M27W101
M27W102
M27W201
M27W401
M27W402
M27W512
M27W801
|
JLCC44W
Abstract: M27C4002 PDIP40 PLCC44 Q0-Q15 tsop40
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 70mA at 10MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)
|
Original
|
PDF
|
M27C4002
256Kb
10MHz
0020h
0044h
FDIP40W
PDIP40
JLCC44W
M27C4002
JLCC44W
PDIP40
PLCC44
Q0-Q15
tsop40
|
Untitled
Abstract: No abstract text available
Text: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING
|
Original
|
PDF
|
M27C4002
24sec.
FDIP40W
JLCC44W
M27C4002
100ns
120ns
150ns
200ns
|
JLCC44W
Abstract: 256kb 16 bit eprom M27C4002 PLCC44 Q0-Q15 0044H
Text: M27C4002 4 Mbit 256Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 24sec.
|
Original
|
PDF
|
M27C4002
256Kb
24sec.
0020h
0044h
M27C4002
FDIP40W
JLCC44W
JLCC44W
256kb 16 bit eprom
PLCC44
Q0-Q15
0044H
|
asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
|
Original
|
PDF
|
BRMEMSEL/0997
asm eagle
M28F101
M28F102
M28F201
M28F256
M28F512
texas 4mb dram
M27C1024
Parallel NOR Flash Market
MBX860
|
64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: CMOS 4002 M27C4002 JLCC44W PDIP40 PLCC44 Q0-Q15
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 70mA at 10MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■
|
Original
|
PDF
|
M27C4002
256Kb
10MHz
FDIP40W
PDIP40
JLCC44W
M27C4002
JLCC44ifications
64 CERAMIC LEADLESS CHIP CARRIER LCC
CMOS 4002
JLCC44W
PDIP40
PLCC44
Q0-Q15
|
JLCC44W
Abstract: M27C4002 PDIP40 PLCC44 Q0-Q15
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 70mA at 10MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)
|
Original
|
PDF
|
M27C4002
256Kb
10MHz
0020h
0044h
FDIP40W
PDIP40
JLCC44W
M27C4002
JLCC44W
PDIP40
PLCC44
Q0-Q15
|
64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: CMOS 4002 JLCC44W M27C4002 PDIP40 PLCC44 Q0-Q15
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 70mA at 10MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■
|
Original
|
PDF
|
M27C4002
256Kb
10MHz
FDIP40W
PDIP40
JLCC44W
M27C4002
JLCC44ions
64 CERAMIC LEADLESS CHIP CARRIER LCC
CMOS 4002
JLCC44W
PDIP40
PLCC44
Q0-Q15
|
JLCC44W
Abstract: M27C4002 PLCC44 Q0-Q15 50mAto
Text: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 80ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V
|
Original
|
PDF
|
M27C4002
24sec.
PLCC44
JLCC44W
M27C4002
JLCC44W
PLCC44
Q0-Q15
50mAto
|
JLCC44W
Abstract: M27C4002 PLCC44 Q0-Q15
Text: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.
|
Original
|
PDF
|
M27C4002
24sec.
M27C4002
JLCC44W
PLCC44
Q0-Q15
|
|
|
JLCC44W
Abstract: KE3F
Text: Memory Products - PACKAGE OUTLINE and MECHANICAL DATA mm Symb Typ inches Min Max A 3.94 A1 Typ Min Max 4.83 0.155 0.190 2.29 3.05 0.090 0.120 B 0.43 0.53 0.017 0.021 B1 0.66 0.81 0.026 0.032 D 17.40 17.65 0.685 0.695 D1 16.00 16.89 0.630 0.665 D2 14.74 16.26
|
Original
|
PDF
|
JLCC44W
JLCC44W
KE3F
|
footprint so44
Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad
|
Original
|
PDF
|
operat911)
D-90449
BRMEMSEL/0699
footprint so44
9977
IC SOCKET TSOP48
TSOP32 FOOTPRINT
ST1355
52 pin plcc socket
ST19GF34
PSDSoft
ST19AF08
serial flash 256Mb fast erase spi
|
M27C4002
Abstract: 1N914 PLCC44 Q0-Q15
Text: rZ 7 ^ 7 m» SG S-THO M SO N M27C4002 liS U @ ji@ llL lI ( § V ji lf ilD i 4 Megabit (256K x 16 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 80ns - COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE • LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz
|
OCR Scan
|
PDF
|
M27C4002
10OjxA
24sec.
M27C4002
JLCC44W
1N914
PLCC44
Q0-Q15
|
27c4002
Abstract: M27C4002
Text: _ 5EE D r Z J *7 # • 7 ^ 5 ^ 53 7 D Ü 3 7 bS Ô =104 ■ SGTH S C S - T H O M S O N s 6 s-thomson K M o m [I » * S M 27C 4002 CMOS 4 Megabit (256K x 16 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 100ns ■ COMPATIBLE WITH HIGH SPEED MICRO
|
OCR Scan
|
PDF
|
100ns
100pA
24sec.
M27C4002
FDIP40W
PDIP40
PLCC44
JLCC44W
27c4002
|
Untitled
Abstract: No abstract text available
Text: £ y j SGS-THOMSON 0 g[^@[l[L[l(gTO(ô Kiia(gi M27C4002 4 Megabit (256K x 16) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns > COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz
|
OCR Scan
|
PDF
|
M27C4002
10OjxA
24sec.
PLCC44
JLCC44W
M27C4002
|
Untitled
Abstract: No abstract text available
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)
|
OCR Scan
|
PDF
|
M27C4002
256Kb
10MHz
100jiA
0020h
0044h
IP40W
PDIP40
M27C4002
FDIP40W
|
Untitled
Abstract: No abstract text available
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ±10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70mA at 10MHz - Standby Current 100|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|is/byte (typical)
|
OCR Scan
|
PDF
|
M27C4002
256Kb
10MHz
0020h
0044h
M27C4002
FDIP40W
JLCC44W
|
27C4002
Abstract: No abstract text available
Text: £ ÿ j S G S-T H O M SO N D IS M iQ J Ig W M lg i M 27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM • FAST ACCESS TIME: 70ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 100H-A ■ PROGRAMMING VOLTAGE: 12.75V
|
OCR Scan
|
PDF
|
27C4002
100H-A
24sec.
M27C4002
7T2R237
D07731D
27C4002
|
M27C4002
Abstract: No abstract text available
Text: ^ 7 SCS-THOMSON * 7 / c Œ M M OgS M 27C 4002 CMOS 4 Megabit 256K x 16 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE with HIGH SPEED MICROPRO CESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 50mA at 5MHz
|
OCR Scan
|
PDF
|
24sec.
M27C4002
PLCC44
JLCC44W
|
Untitled
Abstract: No abstract text available
Text: /= # SGS-THOMSON ^ T / k lì CMOS 4 Megabit 256K x 16 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 100ns ■ C O M PATIBLE W ITH HIGH SPEED M IC R O PROCESSORS, ZERO W AIT STATE ■ LOW POWER “CM O S” CONSUMPTION: - Active Current 50m A at 5MHz
|
OCR Scan
|
PDF
|
100ns
24sec.
M27C4002
M27C4002
FDIP40W
PDIP40
JLCC44W
PLCC44
|
