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    K-952 TRANSISTOR Search Results

    K-952 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K-952 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-D1342

    Abstract: D134 d1340 BDP951 BDP955 Q62702-D1340 Q62702-D1344
    Text: BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Type Marking Ordering Code Pin Configuration


    Original     		PDF BDP951. BDP955 Q62702-D1340 OT-223 Q62702-D1342 Q62702-D1344 Nov-28-1996 Q62702-D1342 D134 d1340 BDP951 BDP955 Q62702-D1340 Q62702-D1344

    VPS05163

    Abstract: No abstract text available
    Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors  For AF driver and output stages 4  High current gain  Low collector-emitter saturation voltage  Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BDP 952


    Original     		PDF VPS05163 OT-223 Sep-30-1999 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package


    Original     		PDF VPS05163 OT-223 Sep-30-1999

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    BD951

    Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD952 BD949 BD950 BD953 BD954 BD955 BD956

    csa952

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		PDF CSA952 CSC2001 25deg C-120 csa952

    transistor csa952

    Abstract: CSA952 CSC2001 MARKING W1 AD
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier.


    Original     		PDF CSA952 CSC2001 25deg C-120 transistor csa952 CSA952 CSC2001 MARKING W1 AD

    transistor csa952

    Abstract: CSA952 CSC2001
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		PDF CSA952 CSC2001 25deg C-120 transistor csa952 CSA952 CSC2001

    BD951

    Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD949 BD950 BD952 BD953 BD954 BD955 BD956

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N167A NPN GERMANIUM TRANSISTOR absolute .maximum ratings: (25°C) Voltage! Collector to Base Collector to Emitter Emitter to Base Vn Vm Vm Current


    Original     		PDF 2N167A

    2N1156

    Abstract: 2N1154 2N1155
    Text: TYPES 2N1154, 2N1155, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 8 2 2 6 9 , J A N U A R Y 1 9 6 2 -R E V IS E D M A Y 1968 FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY m echanical d a ta T h e t ra n s is to r is in a n o v a l w e ld e d p a c k a g e w ith g la s s -t o -m e t a l h e rm e tic s e a l b e t w e e n c a s e a n d le a d s.


    OCR Scan     		PDF 2N1154, 2N1155, 2N1156 2N1154 2N1155 2N1156 2N1154. 2N115S.

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		PDF BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BDP 952 PNP Silicon AF Power Transistor • For A F drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 952 BDP 952 Q62702-D1340 1 =B


    OCR Scan     		PDF Q62702-D1340 BDP951. BDP955 Q62702-D1342 Q62702-D1344 OT-223 S3Sb05 D121040

    bd950

    Abstract: b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D m 711002b 0Cm310fl 3bb « P H I N 7 ^ 3 3 -/ ? SILICON EPITAXIAL B A SE POW ER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a w ide range o f power am plifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; 711002b 0Cm310fl T-33-lf T0-220 BD949; BD950 b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60

    bd950

    Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
    Text: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; T0-220 BD949; BD950J O-22cturer BD950 Z82145 7Z82142 80954 b0952 B0950 BD949 BD954 USA060-1

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general


    OCR Scan     		PDF BDS950/952/954/956 OT223 OT223) BDS949/951/953/955. BDS950 BDS952 BDS954 BDS956

    Q62702-D1340

    Abstract: p952
    Text: SIEMENS BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low coliector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BDP951. BDP955 Q62702-D1340 Q62702-D1342 Q62702-D1344 OT-223 OT-223 300tis; p952

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta sh eet status Product specification d a te o f issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS950/952/954/956 OT223 OT223) BDS949/9517953/955. DS950/952/954/956

    S95 SMD

    Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
    Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF BDS950/952/954/956 OT223) BDS949/951/953/955. OT223 BDS950 BDS952 BDS954 BDS956 S95 SMD s954 s95A BDS95S 1S91

    C3317

    Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
    Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223


    OCR Scan     		PDF OT223) BDS949/951/953/955, 7110fl2b BDS950/952/954/956 OT223 BDS950 BDS952 BDS954 BDS956 C3317 S95 SMD 1S91

    B0952

    Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950
    Text: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R


    OCR Scan     		PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 B0952 b0951 BD951 BD954 b0949 B0950 npn transistors,pnp transistors BD949 BD950

    BD954

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER


    OCR Scan     		PDF BD949, BD950, BD951, BD953, BD955 BD952, BD954, BD956 BD954

    Untitled

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90


    OCR Scan     		PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    micrologic

    Abstract: gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram
    Text: • M ARCH 1965 CT mL952 THROUGH CTgL957 9 TRANSISTOR COMPLEMENTARY TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS MICROLOGIC® G E N E R A L D E S C R IP T IO N - The Fairchild CT/aL Fam ily was designed for very high-speed, low -cost com m ercial system s applications.


    OCR Scan     		PDF CTmL952 CTML957 CTfiL-953 CTia-957 iC953 iL-957 micrologic gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram