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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x8/1M x16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le organization T h e KM 23C 16100 is a fu lly s ta tic m a s k p ro g ra m m a b le 2 ,097,152 x 8 (byte m ode) ROM 1,040,576 x 16 (word m ode)


    OCR Scan     		PDF KM23C16100 16M-Bit 150ns 42-pin, 44-pin, KM23C16100) KM23C16100G)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)


    OCR Scan     		PDF KM23C16100FP 16M-Bit 150ns 100mA 64-pin KM23C16100FP KM23C16100FP)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x 8/1M x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access; 150ns (max.) Page access: 70ns (max.)


    OCR Scan     		PDF KM23C16100 16M-Bit 150ns 100mA 100fiA 42-pin, 44-pin, KM23C16100) KM23C16100G)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C16100FP CMOS MASK ROM 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2 ,0 97,1 52x 0 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)


    OCR Scan     		PDF KM23C16100FP 16M-Bit 150ns KM23C16100FP)

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM23C1610QA 0D17073 4S5 « S U C K CMOS MASK ROM 16M-Bit 2M x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 2,097,152 x 8 bit organization Fast access time: 120ns(max). Supply voltage: single + 5V


    OCR Scan     		PDF KM23C1610QA 0D17073 16M-Bit 120ns 50/xA 36-pin, KM23C16100A QG17D7b KM23C16100A_ KM23C16100A)

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    1212U

    Abstract: No abstract text available
    Text: KM23C1610QA CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM GENERAL DESCRIPTION 2,097,152x8 bit organization Fast access time: 120ns(max). Supply voltage: single + 5V Current consumption Operating: 60mA (max.) Standby: 50^A (max.) • Fully static operation > All inputs and outputs TTL compatible


    OCR Scan     		PDF KM23C1610QA 16M-Bit 152x8 120ns 36-pin, KM23C16100A 100pF KM23C16100A-12 KM23C16100A-15 KM23C16100A-20 1212U

    KM23C8001

    Abstract: 32-sop
    Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E


    OCR Scan     		PDF KM23C256 KM23C512 KC23C1000 KM23C1001 KM23C1010 KM23C1010J KM23C1011 32Kx8 128Kx 256KX KM23C8001 32-sop