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    KM416C256 Price and Stock

    Samsung Semiconductor KM416C256BJ-7T

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    Onlinecomponents.com KM416C256BJ-7T 174
    • 1 $23.26
    • 10 $13.79
    • 100 $13.79
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    Samsung Semiconductor KM416C256DT-L6

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    Onlinecomponents.com KM416C256DT-L6 76
    • 1 $22.1
    • 10 $12.71
    • 100 $5.79
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    Samsung Electro-Mechanics KM416C256DJ-6

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    Bristol Electronics KM416C256DJ-6 152 1
    • 1 $8.96
    • 10 $4.48
    • 100 $3.8824
    • 1000 $3.6736
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    Samsung Semiconductor KM416C256BLT6

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    Bristol Electronics KM416C256BLT6 94
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    Samsung Semiconductor KM416C256DJ-6

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    Bristol Electronics KM416C256DJ-6 64
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    Quest Components KM416C256DJ-6 121
    • 1 $12
    • 10 $12
    • 100 $5.2
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    KM416C256DJ-6 15
    • 1 $9.1785
    • 10 $6.7309
    • 100 $6.119
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    KM416C256DJ-6 12
    • 1 $15
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    KM416C256 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C256 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM416C256-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM416C256-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM416C256-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM416C256ALJ-7 Samsung Electronics C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE Original PDF
    KM416C256D Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ Samsung Electronics KM416C256DJ 256K x 16-Bit CMOS Dynamic RAM With Fast Page Mode, Organization = 256K x 16, Mode = FP, Refresh = -, Speed(ns) = 50,60, Comments = -, Package = 40SOJ,40TSOP2,44TSOP2, Power = -, Production Status = Eol, Voltage(V) = 5 Original PDF
    KM416C256DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 50ns, 5V Original PDF
    KM416C256DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 60ns, 5V Original PDF
    KM416C256DJ-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 70ns, 5V Original PDF
    KM416C256DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DJ-L-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C256DLJ-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Original PDF
    KM416C256DLJ-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability Original PDF
    KM416C256DLJ-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability Original PDF
    KM416C256DLT-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Original PDF

    KM416C256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416C256ALJ-7

    Abstract: No abstract text available
    Text: KM416C256ALJ-7 1/2 IL00 * C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE -TOP VIEW- 16 DQ1 I/O 1 VDD(+5V) 2 GND 40 39 DQ16 I/O 17 18 19 DQ2 I/O 3 38 DQ15 I/O DQ3 I/O 4 37 DQ14 I/O DQ4 I/O 5 36 DQ13 I/O 22 23 24 25 6 VDD(+5V) DQ5 I/O 7 GND 35


    Original     		PDF KM416C256ALJ-7 144X16

    KM416C256D

    Abstract: KM416V256D
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    Original     		PDF KM416C256D, KM416V256D 16Bit 256Kx16 reliability256D 400mil KM416C256D KM416V256D

    KM416C256D

    Abstract: KM416V256D
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    Original     		PDF KM416C256D, KM416V256D 16Bit 256Kx16 KM416C256D KM416V256D

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns


    OCR Scan     		PDF KM416C256A/AL/ALL 256Kx 110ns KM416C256A/AÃ 130ns KM416C256A/AL/ALL-8 150ns KM416C256A/AUALL-6 40-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    OCR Scan     		PDF KM416C256D, KM416V256D 16Bit 256Kx16 0G372DS

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256D, KM416V256D 256Kx16 DQODQ15

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256B, KM416V256B 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256LL 256Kx KM416C256LL 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns KM416C256LL-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM416C256/L/SL DD1343Q KM416C256/USL 130ns KM416C256/USL-8 150ns KM416C256/L/SL-10 KM416C256/USL-7 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM416C256LL KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 16 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random a c c e s s of m em o ry ce lls w ithin th e sam e row. P ow er supply vo lta g e +5.0V o r +3.3V , a cce ss tim e


    OCR Scan     		PDF KM416C256B, KM416V256B

    3DQ10

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or to w power) and


    OCR Scan     		PDF KM416C256D, KM416V256D 16Bit 256KX16 3DQ10

    416C256

    Abstract: KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8
    Text: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 416C 256 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256 416C256 40-LEAD KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8

    3DQ10

    Abstract: KM416C256B NSC55 a6az 3DQ11 KM416V256B
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256B, KM416V256B 256Kx16 DQ8-DQ15 DDED23S 3DQ10 KM416C256B NSC55 a6az 3DQ11 KM416V256B

    KM416C256-7

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 6 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess M emory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM416C256 130ns 180ns 40-LEAD KM416C256-7

    km416c254

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#


    OCR Scan     		PDF KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# 256KX16 16Mx1 km416c254

    416C256J

    Abstract: 416c
    Text: PRELIMINARY KM416C256 CMOS DRAM 2 5 6 K X 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 6 C 2 5 6 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256 6C256J 416C256J 416c

    Untitled

    Abstract: No abstract text available
    Text: KM416C256LL CMOS DRAM 256K x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high pe rform ance ap p lica tio n s


    OCR Scan     		PDF KM416C256LL KM416C256LL-7 KM416C256LL-8 KM416C256LL-10 100ns 130ns 150ns 180ns 416C256LL KM416C256LL

    km416c256b

    Abstract: km416c256bj VSS011 L356
    Text: KM416C256B/B L/BLL CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S a m sun g K M 4 16 C 2 56 B /B L7 B L L is a C M O S high tRAC tCAC tRC 50ns 15ns 90ns KM416C256B/BLVBLL-6 60ns 15ns 110ns


    OCR Scan     		PDF KM416C256B/B 40-LEAD km416c256b km416c256bj VSS011 L356

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME J> KM416C256LL Wt 7 ^ 4 1 4 2 DD134S3 b21 « S M C K CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its


    OCR Scan     		PDF KM416C256LL DD134S3 KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns 100ns 180ns KM416C256LL-10

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256/L/SL 256Kx KM416C256/L/SL KM416C256/USL-7 130ns KM416C256/USL-8 150ns KM416C256/USL-10 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256D, KM416V256D 256Kx16 0DQ15 0G23E4S

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION The S a m sun g K M 4 1 6 C 2 5 6 B /B IV B L L is a C M O S high • Performance range: tRAC tCAC tRC KM416C256B/BIVBLL-5 50ns 15ns 90ns KM416C256B/BI7BLL-6


    OCR Scan     		PDF KM416C256B/BL/BLL KM416C256B/BIVBLL-5 KM416C256B/BI7BLL-6 110ns KM416C256B/BL/BLL-7 130ns KM416C256B/BL/BLL-8 150ns KM416C256B/B ib4142

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256B, KM416V256B 256Kx16