Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)
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OCR Scan
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KM64B258A
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-pin
144-bit
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PDF
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TI41
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)
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OCR Scan
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-pin
TI41
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 1 0 ,12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)
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OCR Scan
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-SOJ-300
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PDF
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM64B258A 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A cc e s s Tim e: 8, 10, 12ns (m ax.) • Lo w Pow er D issipation Standb y (TTL) : 1 10m A (m ax.) (C M O S): 20m A (m ax.) O p era tin g K M 64B 258A J-8: 185m A (m ax.)
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OCR Scan
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KM64B258A
28-pin
144-bit
300mil)
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B258A BiCMOS SRAM 65,536 W O R D x4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)
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OCR Scan
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-SOJ-3QO
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B258A BiCMOS SRAM 64Kx4 Bit With ÜE High Speed BiCMOS Static RAM FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION^? v ie w ) N.C A0 [7 z | Vcc ?7] A15 A1GE 1 A2 [ T ?5] A13 A3 • vcc - vss C GENERAL DESCRIPTION The KM64B258A is a 262,144-bit high-speed Static
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OCR Scan
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KM64B258A
64Kx4
KM64B258A
144-bit
28-pin
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PDF
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SOJ 44
Abstract: 1MX1 KM6865
Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001
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OCR Scan
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KM6465B/BL
KM6466B/BL
KM6865B/BL
KM64258B
KM64258C
KM64V258C
KM64B258A
KM64B261A
KM68257B/BL
KM68257C/CL
SOJ 44
1MX1
KM6865
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 7E » • 7 c b m 4 E KM64B258A GG175BQ IT T BiCMOS SRAM 65,536 WORD x 4 Bit With OE) High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)
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OCR Scan
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KM64B258A
GG175BQ
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)
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OCR Scan
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-SQJ-300
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PDF
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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PDF
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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OCR Scan
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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PDF
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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PDF
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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OCR Scan
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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PDF
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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PDF
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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OCR Scan
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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PDF
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AG10
Abstract: km416c256 1m maskrom KM68B1002-10
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10
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OCR Scan
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KM41C4000A-7
KM41C4000A-8
KM41C4000A-10
KM41C4000AL-7
KM41C4000AL-8
KM41C4000AL-10
KM41C4000ASL-7
KM41C4000ASL-8
KM41C4000ASL-10
KM41C4001A-7
AG10
km416c256
1m maskrom
KM68B1002-10
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PDF
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