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    LB 0,5 MA TRANSISTOR Search Results

    LB 0,5 MA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LB 0,5 MA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR20

    Abstract: BSR20A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR20 BSR20A SILICON P–N–P HIGH–VOLTAGE TRANSISTORS P–N–P high–voltage small–signal transistors Marking BSR20 = T35 BSR20A = T36


    Original     		PDF OT-23 BSR20 BSR20A BSR20 C-120 BSR20A

    BSR20

    Abstract: BSR20A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR20 BSR20A SILICON P–N–P HIGH–VOLTAGE TRANSISTORS P–N–P high–voltage small–signal transistors Marking


    Original     		PDF OT-23 BSR20 BSR20A BSR20 C-120 BSR20A

    SOT-23 MARKING T36

    Abstract: BSR20 BSR20A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR20 BSR20A SILICON P–N–P HIGH–VOLTAGE TRANSISTORS P–N–P high–voltage small–signal transistors Marking BSR20 = T35 BSR20A = T36


    Original     		PDF OT-23 BSR20 BSR20A BSR20 C-120 SOT-23 MARKING T36 BSR20A

    2N3584

    Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
    Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension


    OCR Scan     		PDF CB-72 2N3584 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583

    IC 4047

    Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA


    OCR Scan     		PDF BSW83 2N3301 2N3302 IC 4047 N2219 ic 4046 bsw830 BSW82 N 2222 N2222A 2N3301 2N3302

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • bt.53131 0015^75 4 ■ I BSR40 to 43 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits.


    OCR Scan     		PDF BSR40 BSR42 BSR43 BSR41 BSR40 BSR41 BSR42

    BSS51

    Abstract: BSS50 BSS52 BSS60 BSS61 BSS62
    Text: bTE D N AMER PHILIPS/DISCRETE • btS3T31 D027flSh 553 ■ APX BSS50 to 52 A N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.


    OCR Scan     		PDF 002705b BSS50 BSS60, BSS61 BSS62. BSS51 BSS52 BSS50; BSS52 BSS60 BSS62

    PN3440

    Abstract: 9t2 transistor PN3439
    Text: N AMER PHILIPS/DISCRETE b'ïE D Bi ^ 5 3 ^ 3 1 A DD5ÔDSÛ Tbb * A P X PN3439 PN3440 SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.


    OCR Scan     		PDF PN3439 PN3440 PN5415/5416. PN3440 9t2 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.


    OCR Scan     		PDF bb53531 Q037flSb BSS50 BSS60, BSS61 BSS62. BSS50 BSS51 BSS52 bbS3531

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.


    OCR Scan     		PDF BUX46BUX46A BUX46 BUX46A bbS3T31

    2n5038

    Abstract: C 5039 2N5039 2N5039-1 503B 20S2 N5038 2N5038-1 lc 112
    Text: NPN SILICON TRANSISTORS E P IT A X IA L COLLECTOR 2 N 5038 TRANSISTORS S ILIC IU M NPN COLLECTEUR E P IT A X IE 2 1\] 5 Q 3 9 High current fast switching transistor \j 9075 VV Transistor de com m utation rapide fo r t courant High frequency applications as switching


    OCR Scan     		PDF CB-19on CB-19 2n5038 C 5039 2N5039 2N5039-1 503B 20S2 N5038 2N5038-1 lc 112

    transistor bux 39

    Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
    Text: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5


    OCR Scan     		PDF 10/is transistor bux 39 transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51

    PH13002

    Abstract: No abstract text available
    Text: / N A ME R PHILIPS/DISCRETE 2SE D • 1^ 53=131 Q D n i m 3 ■ PH13002 PH13003 T - 3 3 - 0 ? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-126 envelope, intended for use in switching regulators, inverters, motor control, solenoid/relay drivers and deflection circuits.


    OCR Scan     		PDF PH13002 PH13003 O-126 001114S T-33-09 PH13002

    TIP2955T

    Abstract: A4S2 TIP3055T T-23-Z
    Text: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR


    OCR Scan     		PDF TIP2955T 711005b 0043b04 T-23-Z TIP3055T T0-220. 711002h T-33-21 TIP2955T A4S2

    BUV26

    Abstract: BUV26A 11/BUV26
    Text: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.


    OCR Scan     		PDF 711002b D031GbT BUV26 BUV26A T0-220 O-220AB. 711005b BUV26A 11/BUV26

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D bb53^31 □□E7bED 53b BCY56 BCY57 IAPX A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. They are intended for general purpose very high-gain low level and low-noise applications. Moreover,


    OCR Scan     		PDF BCY56 BCY57

    ESM133

    Abstract: No abstract text available
    Text: ESM 132 ESM 133 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILICIUM PNP, BASE EPITAXIEE ESM 134 Compl. of 2N 5294, 2N 5296, 2N 5298 PRELIM INARY DATA NOTICE PRELIM IN AIR E - LF amplification stages complementary symetry -7 0 V - Switching (-6 0 V


    OCR Scan     		PDF ESM133 T0-220 drawingCB-117on CB-117

    BDT95

    Abstract: BDT96 BDT91 1346P pht 094 BDT93
    Text: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and


    OCR Scan     		PDF 05-DEC-1997 BDT91 BDT93 BDT95 8DT92, 8DT94 BDT96. BDT93 BDT95 BDT96 BDT91 1346P pht 094

    BDX46

    Abstract: BDX47 pnp Darlington BDX45 T-33-31 darlington transistor 90v BDX42 BDX43 BDX44
    Text: BDX45 BDX46 BDX47 1 PHILIPS INTERNATIONAL SbE D 711052b 0043*434 ITO Ä P H I N T-3 3 -3 1 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope with collector connected


    OCR Scan     		PDF BDX45 BDX46 BDX47 711002b T-33-31 O-126 BDX42, BDX43 BDX44 BDX45 BDX46 BDX47 pnp Darlington T-33-31 darlington transistor 90v BDX42

    BDT41

    Abstract: BDT41A BDT41B BDT42 TIP41
    Text: SSE D N AMER PHILIPS /DI SCRETE • 11 1^53=531 0Qlei713 □ ■ BDT41;A BDT41B;C I T - 33 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The T IP41 series is an equivalent type. P-N-P complements are B D T 4 2 series.


    OCR Scan     		PDF BDT41 BDT41B TIP41 BDT42 T0-220AB. 7Z82918 T-33-11 BDT41A

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA


    OCR Scan     		PDF PXT3906 OT-89 7Z74969

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization


    OCR Scan     		PDF 2003S 2009S LBE2003S LBE2009S LCE2003S LCE2009S

    Untitled

    Abstract: No abstract text available
    Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended


    OCR Scan     		PDF TIP3055T TIP295ST O-220 bbS3R31 0D3SQ31 003S032

    2N3440

    Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
    Text: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications


    OCR Scan     		PDF 2n3439 2N3440 j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J