Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH5116S Search Results

    LH5116S Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH5116S Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116SN Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116SN Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5116SN Sharp 16K CMOS STATIC RAM (2,048 x 8 bit) Scan PDF

    LH5116S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH5116S

    Abstract: LH5116SN
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


    Original     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN 5116S-5 24SOP OP024-P-0450B) LH5116SN

    LH5116S

    Abstract: LH5116SN
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


    Original     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN 5116S-5 24SOP OP024-P-0450B) LH5116SN

    62512 RAM

    Abstract: RAM 62128 LTC695-3 LTC695 LTC694 69433
    Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UL Recognized File # E145770 Guaranteed Reset Assertion at VCC = 1V Pin Compatible with LTC694/LTC695 for 3.3V Systems


    Original     		PDF LTC694-3 3/LTC695-3 E145770 LTC694/LTC695 200ms LH5116S LTC1326 LTC1536 62512 RAM RAM 62128 LTC695-3 LTC695 LTC694 69433

    LTC 433

    Abstract: LTC695-3 LTC695CN LTC6948
    Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits FEATURES DESCRIPTION n The LTC 694-3.3/LTC695-3.3 provide complete 3.3V power supply monitoring and battery control functions. These include power-on reset, battery back-up, RAM write protection, power failure warning and watchdog timing. The


    Original     		PDF LTC694-3 3/LTC695-3 LTC694/LTC695 LH5168SH LH5116S LTC1326 LTC1536 69453fb LTC 433 LTC695-3 LTC695CN LTC6948

    LTC694CN-3

    Abstract: LTC695-3.3 LTC695-3 LTC695 LTC694 LT1129
    Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Reset Assertion at VCC = 1V Pin Compatible with LTC694/LTC695 for 3.3V Systems 200µA Typical Supply Current Fast 30ns Typ On-Board Gating of RAM Chip


    Original     		PDF LTC694-3 3/LTC695-3 LTC694/LTC695 SO-16 200ms function15 16-Lead SOL16 LTC694CN-3 LTC695-3.3 LTC695-3 LTC695 LTC694 LT1129

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN \I02\Z 450-mii

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 2,048 • Access time: 1000 ns MAX. • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) x 8 bit organization CM O S 16K (2K x 8) Static RAM DESCRIPTION The LH5116S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116S LH5116S 24-pin, 450-mil 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


    OCR Scan     		PDF 24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


    OCR Scan     		PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Low power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • j Fully static operation • Three-state outputs • Single +3 V power supply • Package: 24-pin, 450-mil SOP


    OCR Scan     		PDF LH5116S LH5116S 24-PIN 24-pin, 450-mil OP24-P-450) LH5116SN-10

    Untitled

    Abstract: No abstract text available
    Text: LH5116S CM O S 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It operates at a low supply voltage of 3 V ±10%.


    OCR Scan     		PDF LH5116S LH5116 24-pin, 450-mil 24-PIN LH5116S LH5116SN

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization 24 - PIN SOP TOP VIEW • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 [iW (MAX.) • Fully-static operation • Three-state outputs


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 24SOP OP024-P-0450B) 450-mii

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES • 2,048 x 8 bit organization • Access time: 1000 ns MAX. • Low power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116S is astatic RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN \f03C 5116SN-1

    450-mil

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization 2 4 -P IN S O P T O P V IE W • Access time: 1000 ns (MAX.) • Fully-static operation • Three-state outputs Ag IZ • Package: 24-pin, 450-mil SOP DESCRIPTION


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 450-mii OP024-P-0450B)

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


    OCR Scan     		PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    MB8416A-15

    Abstract: MB8416A-15L LH5116-15 MB8416A-12L lc3518 MB8416-20 MK48Z02-15 LH5115-70 MB8416A MB8416-15
    Text: 52 16 K X 4 CMOS -y + y iSglSffl £ £ a Ä CO TAAC wax ns TCAC max (ns) TOE •tax (ns) TOH (ns) TOD max (ns) f S t a t i c ft TWF’ TDS min min (ns) (ns) 95 TDH ■in (ns) LC3516A/AM/AS-12 SANTO -30-85 50 LC3516A/AM/AS-15 SANYO -30— 85 150 150 5 120


    OCR Scan     		PDF 24P1N6116 LC3516A/AM/AS-12 LC3516A/AM/AS-15 MN4416S-12 4416S-15 MS6515L-10 MSM5126-20RS TC5117 MSM512S-25RS MB8416A-15 MB8416A-15L LH5116-15 MB8416A-12L lc3518 MB8416-20 MK48Z02-15 LH5115-70 MB8416A MB8416-15

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


    OCR Scan     		PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


    OCR Scan     		PDF LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31