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    LH52253 Price and Stock

    Sharp Microelectronics of the Americas LH52253D-20

    STANDARD SRAM, 64KX4, 20NS, CMOS, PDIP28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH52253D-20 34
    • 1 $15
    • 10 $7.5
    • 100 $6.5
    • 1000 $6.5
    • 10000 $6.5
    Buy Now

    Sharp Microelectronics of the Americas LH52253K-20

    IC,SRAM,64KX4,CMOS,SOJ,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH52253K-20 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    LH52253 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH52253D15 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253D-17 Sharp SRAM GP Single Port Original PDF
    LH52253D-20 Sharp SRAM GP Single Port Original PDF
    LH52253D20 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253D-25 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253D-35 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253K15 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253K-17 Sharp SRAM GP Single Port Original PDF
    LH52253K-20 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253K-25 Sharp CMOS 64K x 4 STATIC RAM Scan PDF
    LH52253K-35 Sharp CMOS 64K x 4 STATIC RAM Scan PDF

    LH52253 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 17/20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • Common I/O for Low Pin Count • JEDEC Standard Pinouts • Packages: 28-Pin, 300-mil DIP


    Original
    LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. 28SOJ300 PDF

    km681001j-20

    Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
    Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ


    Original
    AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 17/20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation CMOS 64K X 4 Static RAM The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention jluring Write


    OCR Scan
    LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. 28SK-DIP PDF

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 1 0 % Supply • Fully Static Operation • Common I/O for Low Pin Count • JEDEC Standard Pinouts • Packages: 28-Pin, 300-mil DIP


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    LH52253 28-Pin, 300-mil LH52253 LH52253. PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP E L E K / MELEC » I V 44E » b LH52253 FEATURES aiao?=ia 0004=125 ? m s r p j CMOS 32K x 8 Static RAM When E is LOW and W Is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs.


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    28-Pin, 300-mil LH52258 10G7Tà GG04eà PDF

    DA72

    Abstract: D-A72
    Text: LH52253 FEATURES • Fast Access Times: 17/20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation CMOS 64K x 4 Static RAM The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention_during Write


    OCR Scan
    LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. 28SK-DIP DA72 D-A72 PDF

    A10C

    Abstract: LH52253K-25
    Text: ~1 ^ i f LH52253 FEATURES • Fast Access Times: 15*/20/25/35 ns • Standard 28-Pin, 300-mil DIP • S]pace Saving 28-Pin, 300-mil SOJ • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation


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    LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. A10C LH52253K-25 PDF

    5225M

    Abstract: SOJ28
    Text: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation C M O S 64K x 4 Static R A M The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention _during Write


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    LH52253 28-Pin, 300-mil LH52253 256K-bit as64Kx LH52253. 5225M SOJ28 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 17/20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V + 10% Supply • Fully-Static Operation CMOS 64K x 4 Static RAM The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention during Write


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    LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. 28DIP-1 PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


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    LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17 PDF

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55 PDF

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


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    LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 PDF

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl PDF

    9660t

    Abstract: LH521008
    Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed


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    LH101504 LH101510 LH101504/LH101510 256K/1M-bit 742S6 9660t LH521008 PDF

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


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    LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252 PDF

    4108 RAM

    Abstract: No abstract text available
    Text: CMOS 64K x 4 Static RAM FEATURES • Fast Access Times: 15 720/25/35 ns • Standard 28-Pin, 300-mil DIP • Space Saving 28-Pin, 300-mil SOJ • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply •


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    28-Pin, 300-mil LH52253 LH52253. LH52253 4108 RAM PDF

    100 10L AD

    Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
    Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10


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    LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20 PDF