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Sharp Microelectronics of the Americas LH5117HN-10
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Bristol Electronics	LH5117HN-10		917			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sharp Microelectronics of the Americas LH5117N-10
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Bristol Electronics	LH5117N-10		420			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sharp Microelectronics of the Americas LH5117-12
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Bristol Electronics	LH5117-12		170			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sharp Microelectronics of the Americas LH5117H10 INSTOCK
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Chip 1 Exchange	LH5117H10		711			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others LH5117H10 INSTOCK
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Chip 1 Exchange	LH5117H10		136			1 - 10 - 100 - 1000 - 10000 -	Get Quote

LH5117 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
LH5117-10		Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets		Scan	PDF
LH5117-15		Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets		Scan	PDF
LH5117-20		Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets		Scan	PDF

LH5117 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
lh5117 Abstract: DIP24-P-600 Text: LH5117 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) The chip select input provides high speed access in	OCR Scan	PDF	LH5117 LH5117H: 24-pin, 600-mil 300-mil 450-mil 24-PIN DIP24-P-600
lh5117 Abstract: 5117 RAM Text: LH5117 CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 100 ns (MAX.) • Power consumption:	OCR Scan	PDF	LH5117 LH5117H: 24-pin, 600-mil 300-mil 450-mil LH5117 24-PIN 5117 RAM
LH5117 Abstract: 51171 LH5117N Text: LH5117 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 jiW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process	OCR Scan	PDF	LH5117 LH5117 24-PIN 24-pin, 600-mil DIP24-P-600) 300-mil 51171 LH5117N
lh57257 Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429	OCR Scan	PDF	IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02
BNK-17 Abstract: No abstract text available Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85	OCR Scan	PDF	LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17
LH5160N Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55 Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	PDF	LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
LH5117-10 Abstract: HM6117HLP-70 LH5118-20 LH5117-15 lh5118-10 lh5117 HM6117LP-4 LH5117-20 M5M5118P-12 HM6117LP-3 Text: - 56 1 6 K m & tt ¿ a s iE H £ CC CMOS * 4 TAAC max ns) TCAC max (ns) TOE max (ns) + TOH y •/ (ns) TOD max (ns) TWP min (ns) S t a t i c R A M ( 2 0 4 8 x 8) 2 4 P I N 6 1 1 7 ft ft TDS »in (ns) À TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C	OCR Scan	PDF	24PIN6117 CXK5818PN/M-10 CXK5818PN/M-10L CXK5818PN/M-180 LH5117-10 LH5118-15 LH5118-20 LH5118-10 M5M5117P M5M5117P-12 HM6117HLP-70 LH5117-15 lh5117 HM6117LP-4 LH5117-20 M5M5118P-12 HM6117LP-3
LH5911 Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	PDF	LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
LHS168 Abstract: LH52252A LH52252 Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j	OCR Scan	PDF	LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252