LH5316600 Search Results

LH5316600 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LH5316600D		Sharp	EPROM Parallel Async		Original	PDF
LH5316600N		Sharp	EPROM Parallel Async		Original	PDF

LH5316600 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
42-PIN Abstract: 44-PIN trc 5296 Text: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316600 FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 2750 µW (MAX.)	Original	LH5316600 42-PIN D15/A-1 44SOP 44-pin, 600-mil 42-pin, 44-PIN trc 5296	PDF
Untitled Abstract: No abstract text available Text: LH5316600 FEATURES • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 2750 µW (MAX.) • Static operation CMOS 16M (2M × 8/1M × 16) MROM	Original	LH5316600 42-pin, 600-mil 44-pin, LH5316600 16M-bit 42-PIN 44SOP	PDF
MB834000 Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010	Original	MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel	PDF
536G Abstract: LH534600 Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)	OCR Scan	LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600	PDF
lh57257 Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429	OCR Scan	IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02	PDF
LH231G Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g\|g\|ï\|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200	OCR Scan	28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235	PDF
lh5s4 Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46 Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.	OCR Scan	LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46	PDF
flash 64m Abstract: No abstract text available Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161	OCR Scan	100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m	PDF
LH 531 G 24 Abstract: No abstract text available Text: C M O S FEATURES • 2,097,152 words Byte mode 1,048,576 words (Word mode) 16M x 8 /1 M x 1 6 ) M R O M PIN CONNECTIONS x 8 bit organization 4 2 -P IN x 16 bit organization • Access time: 100 ns (MAX.) D IP T O P V IE W • Power consumption: Operating: 550 mW (MAX.)	OCR Scan	42-pin, 600-mil 44-pin, LH5316600 42DIP DIP042-P-0600) 44SOP LH 531 G 24	PDF
LQ070T5BG01 Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66	OCR Scan	109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506	PDF
Untitled Abstract: No abstract text available Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time	OCR Scan	28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B	PDF
A-1435 Abstract: No abstract text available Text: CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM LH 5316600 FEATURES PIN CONNECTIONS • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.)	OCR Scan	42-pin, 600-mil 44-pin, 42-pln, 44SOP OP044-P-0600) 44-pln, A-1435	PDF
IR3Y29B Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02 Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX	OCR Scan	ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02	PDF
48 tsop flash pinout Abstract: LH23512 Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 \|- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)	OCR Scan	LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout	PDF

Untitled Abstract: No abstract text available Text: CMOS 16M 2 M x 8/ 1M x 16 MROM FEATURES • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 2750 (iW (MAX.) • Static operation	OCR Scan	42-pin, 600-mil 44-pin, LH5316600 16M-bit 42-PIN CMOS16M LH5316600 42DIP	PDF
IR2E27A Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31 Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080	OCR Scan	Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31	PDF