44-PIN
Abstract: LH5324500 LH5324500N
Text: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O
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Original
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LH5324500
44-PIN
44-pin,
600-mil
LH5324500
24M-bit
44SOP
LH5324500N
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PDF
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44-PIN
Abstract: LH5324500 LH5324500N 24M-BIT
Text: CMOS 24M 3M x 8/1.5M × 16 Mask-Programmable ROM LH5324500 FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.)
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Original
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LH5324500
44-PIN
44-pin,
600-mil
LH5324500
24M-bit
44SOP
LH5324500N
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PDF
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Untitled
Abstract: No abstract text available
Text: LH5324500 FEATURES CMOS 24M 3M x 8/1.5M x 16 MROM PIN CONNECTIONS • 3,145,728 words (Byte mode) x 1,572,864 words (Word mode) x 8 bit organization 44-PIN SOP TOP VIEW S 1• A-I8 C 2 43 — I a 19 A17IZ 3 42 ^ A8 • Access time: 150 ns (MAX.) a7C 4 41 Zl Ag
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OCR Scan
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LH5324500
44-PIN
A17IZ
44-pin,
600-mil
44SOP
OP044-P-0600)
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PDF
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LH5324500
Abstract: LH5324500N as3145
Text: LH5324500 CMOS 24M 3M x 8/1.5M x 16 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 3,145,728 words x 8 bit organization (Byte mode) 44-PIN SOP r 1,572,864 words x 16 bit organization (Word mode) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 p-W (MAX.)
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OCR Scan
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LH5324500
44-pin,
600-mil
24M-bit
44-pin
44sop
LH5324500N
as3145
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PDF
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Untitled
Abstract: No abstract text available
Text: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 \i\N (MAX.) CMOS 24M (3M x 8/1.5M x 16) MROM
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OCR Scan
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LH5324500
44-pin,
600-mil
LH5324500
OP044-P-0600)
LH5324500N
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PDF
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Untitled
Abstract: No abstract text available
Text: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 nW (MAX.) • Static operation • TTL compatible I/O
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OCR Scan
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LH5324500
44-pin,
600-mil
LH5324500
24M-bit
44-PIN
44SOP
OP044-P-0600)
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PDF
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536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
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OCR Scan
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LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
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PDF
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lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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OCR Scan
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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PDF
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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OCR Scan
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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PDF
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lh5s4
Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.
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OCR Scan
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LH531000BN-S
LH53V2P00AN/AT
LH53V4P00N/T
LH53V8500N/T
LH53V16500AN/AT
LH53V32500AN-2
LH53V32500AT-2
LH53V64P00T
LH53V64POON
LH53V12800T
lh5s4
lh537
48-TSOP
LH5s
42-DIP
48TSOP1
LH5364P00D
LH538
LH5S46
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PDF
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flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
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OCR Scan
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100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
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PDF
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IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
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OCR Scan
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ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
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PDF
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LH5324000D
Abstract: LH5324C00 LH5324C00D LH5365 sharp mask rom 48TSOP LH536
Text: SHARP NEW PRODUCT INFORMATION LH5324C00 • 24M-bit Mask-Programmable ROM ■ Description Pin Connections The LH5324C00D User’s No. : LH536CXX is a CMOS 24M-bit mask-programmable ROM organized as 1 572 864 X 16 bits. It is fabricated using sillicon-gate CMOS process
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OCR Scan
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LH5324C00
24M-bit
LH5324C00D
LH536CXX)
42-pin
DIP042-P-0600)
A0-A20
LH5324000D
LH5324C00
LH5324C00D
LH5365
sharp mask rom
48TSOP
LH536
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PDF
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48 tsop flash pinout
Abstract: LH23512
Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
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OCR Scan
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LH2369
LH23126
LH23255
LH53259
LH23512
LH53517
LH53H0900
LH531VOO
LH530800A
LH530800A-Y
48 tsop flash pinout
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PDF
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