S15C
Abstract: S20C SD603C
Text: Bulletin I2068 rev. C 04/00 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
50Hzse
S15C
S20C
SD603C
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IRE-5
Abstract: HD63140 CP IRS15 L2021 006-AD HD63140 IRE20 HD6301X IRE5 XTAL 16Mhz
Text: H D 6 3 1 4 - U n iversal P u lse P ro ce sso r U P P • • D e s c r ip tio n T h e H ita c h i H D 63140 U n iv e rsa l P u lse P r o c e s so r is a CM O S p e r ip h e r a l LSI c o n s is tin g of
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HD63140-
HD63140
10-bit
1024-byte
16-bit
ADE-502-002)
IRE-5
HD63140 CP
IRS15
L2021
006-AD
IRE20
HD6301X
IRE5
XTAL 16Mhz
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LSE B9
Abstract: No abstract text available
Text: ÛUALITY SEMICONDUCTOR INC LSE QS3384, Q D • 7m3bô03 OOGlMll 355 QS32384 High Speed CMOS 10-bit Bus Switches QS32384 FEATURES/BENEFITS ■ • • ■ • 5£1 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3384
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QS3384,
QS32384
10-bit
24-pin
QS3384
QS32384
MDSL-00032-01
LSE B9
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Triacs tag 89
Abstract: TAG 233 600 triacs bt 12 TRIAC TAG 90 BTA140 BTA140-500 IEC134
Text: PHIL IPS I N T E R N A T I O NA L LSE » • 7 1 i a ö 2h OOt.HB'ib 47h H P H I N J BTA140 SERIES TRIACS Glass-passivated 25 ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low
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711002b
BTA140
BTA140-500
Triacs tag 89
TAG 233 600
triacs bt 12
TRIAC TAG 90
IEC134
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UDR20
Abstract: 20U15 HD63140 ire5
Text: H D 6 3 1 4 - U niversal Pulse Processor UPP D escription 24 16-bit u n iv e rsa l re g iste rs (UDR) 16 I/O te rm in a ls (8 in te rn a l re g iste rs for p u lse I/O c o n tro l a re also p ro v id ed )
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HD63140
10-bit
1024-byte
16-bit
UDR20
20U15
ire5
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HD63143
Abstract: ddr5 HD63143B00PS FS12 SCR HD63143A00PS ali m 3328 voltage relay omr h IRS21 application note MFNO HD68HC000
Text: H D 6 3 1 4 3 - U n ive rsal P u lse P ro ce sso r UPP-H1 D escription • T h e H ita c h i H D 6 3 1 4 3 U n iv e rsa l P u ls e P r o c e s so r is a C M O S p e r ip h e ra l L S I c o n s is tin g o f
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HD63143-
16-bit
1024-byte
S2074H
U0/P10-U7/P17
UB/P20-U
5/P27
ADE-502-002)
HD63143
ddr5
HD63143B00PS
FS12 SCR
HD63143A00PS
ali m 3328
voltage relay omr h
IRS21 application note
MFNO
HD68HC000
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STATES10
Abstract: No abstract text available
Text: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk
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L64245
STATES10
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STATES10
Abstract: 164245 h4 6457 Three-Five 74LS373 L64245 DI9010
Text: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk
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L64245
L64245
STATES10
164245
h4 6457
Three-Five
74LS373
DI9010
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h240
Abstract: t8 3580
Text: LSI LOGIC L64245 Versatile FIR Filter Prelim inary D escrip tio n T h e L64245 F IR Fin ite Im p u lse R e sp o n s e filte r p ro c e s s o r p e rfo rm s filte rin g in m an y d iffe re n t fo rm s fo r a p p lic a tio n s rangin g from b ro a d c a stq u ality vid e o tra n s m is s io n and H D TV to d isk
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L64245
h240
t8 3580
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fu320
Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR320/322 IRFU320/322 N-CHANNEL POWER MOSFET FEATURE • • • • • • • QG1235G 044 ■ SflGK D-PACK Lower R ds <0N Improved inductive ru gged ess Fast switching time R ugged polysllic on gate cell structure
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Q1235G
IRFR320/322
IRFU320/322
IRFR320/U320
IRFR322/U322
loS-20W
fu320
u322
IRFR322
i FU320
322 mosfet
tag t 2512
u320 diode
160Tl
IRFR320
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STB 11 N B 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 R D S(on) Id < 0 .5 5 Q. 1 0 .7 A dss 400 V • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED
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TB11N
STB11NB40
O-263
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Untitled
Abstract: No abstract text available
Text: SGS-1H0MS0N IMOigœiILliera *® S T B 7 N B 40 N - CHANNEL ENHANCEMENT MODE _PowerMESH MOSFET PRELIM IN ARY DATA TYPE STB7N B40 . • . . . . V dss RDS on Id 400 V < 0.9 Q. 7 .0 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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O-263
STB7NB40
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ S T B 11NB 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 dss 400 V R D S(on) Id < 0 .5 5 Q. 1 0 .7 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED
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TB11N
STB11NB40
O-262
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b11nb
Abstract: No abstract text available
Text: SGS-THOMSON * 7# [MOeiMillLieraeiDIgS S T B 11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYP E S TB11N B40 • . . . . dss 400 V R d S o ii Id < 0 .5 5 Ç1 1 0 .7 A TYPICAL RDS(on) = 0.48 £2 EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED
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TB11N
b11nb
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TP11N
Abstract: T0220F
Text: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Q - 10.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP11 N B40 S TP11N B40FP 400 V 400 V < 0 .5 5 Q < 0 .5 5 Q 1 0 .7 A 6.0 A . TYPICAL RDS(on) = 0.48 Q EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED
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STP11NB40
STP11NB40FP
T0-220/T0-220FP
STP11
TP11N
B40FP
T0220F
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Untitled
Abstract: No abstract text available
Text: International 1»r]Rectifier s e rie s b4o h f l / h2l FAST RECOVERY DIODES Power Modules in B-package Features • ■ ■ ■ 40A F a s t re c o v e ry tim e c h a ra c te ris tic s E le c tric a lly is o la te d b a s e p la te S ta n d a rd J E D E C p a c k a g e
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Untitled
Abstract: No abstract text available
Text: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48ÎÎ - 1 0.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss R D S o n Id S TP11N B40 S T P 1 1 N B 4 0F P 400 V 400 V < 0.5 5 Q. < 0.5 5 Q, 1 0 .7 A 6.0 A • . . . . TYPICAL RDS(on) = 0.48 £1 EXTREMELY H IG H dV /dt CAPABILITY
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STP11NB40
STP11NB40FP
T0-220/T0-220FP
TP11N
STP11NB40/FP
O-22QFP
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SSP2N90
Abstract: 123456789
Text: N-CHANNEL POWER MOSFETS SSP2N90 FEATURES • L o w e r R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSP2N90
SSP2N90
CI20435
123456789
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7915 CT
Abstract: nec 7915 IC 7915 7915 I8N25 7915 UC
Text: N E C ELECTRONICS INC fll 6427525 N E C D e J b427SaS 0010115 1 ELECTRONICS INC 81C 10195 D T—79—15 NEC Electronics Inc. D e sc r ip tio n /JPC4084 Q U A D J-FET IN PUT o p e r a t io n a l a m p lifie r P in C o n fig u r a tio n T h e //P C 4 0 8 4 o ffe rs fo u r o p e ra tio n a l am p lifie rs with
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b427SaS
T--79--15
uPC4084
T-79-15
3-002250A
b427525
HPC4084
7915 CT
nec 7915
IC 7915
7915
I8N25
7915 UC
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cm100dy-28
Abstract: CM1000 cm100dy
Text: b4E D • 7Etmb21 DDObbflS 277 M PR X CM100DY-28 Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC DualIGBTMOD p Q y^Q f M o d u lo
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7Etmb21
CM100DY-28
BP107,
Amperes/1400
100DY-28
peres/1400
CM100DY-28
CM1000
cm100dy
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IRF540
Abstract: irfp140
Text: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es
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IRF540/541/542/543
IRFP140/141
00121b3
O-220
IRF540/IRFP1
IRFP141
IRFP140/141/142/143
IRF540
IRF540/541
IRF540
irfp140
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IC MC14011
Abstract: AD11465 MJE5420Z IC MC14011 application notes IC MC14011 motorola IC TTL 74LS00 mc14011 motorola 74LS00 specifications ic 7401 MJE5420
Text: MOTOROLA SC XSTRS/R F 12E D I L3b7254 0 Gf l5 b4 1 T'43-d5 fl | Order this data sheet by MJE5420Z/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5420Z Advance Information Z-Sw itch Bipolar Pow er Circuit N P N Self-Protected Silicon Pow er Darlington POW ER D A R LIN G T O N
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L3b7254
43-d5
MJE5420Z/D
MJE5420Z
MJE5420Z
MK145BP,
IC MC14011
AD11465
IC MC14011 application notes
IC MC14011 motorola
IC TTL 74LS00
mc14011
motorola 74LS00
specifications ic 7401
MJE5420
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4n33
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*
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4N29/A,
4N32/A
00flbb23
4N29A,
4N32A,
4n33
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PPD-56-1
Abstract: PPD-56-2 PPD-56-3 PPD-56-4 PPD-56-5 PPD-56-5M PPD-56-6 PPD-56-7 PPD-56-8
Text: 7a s t Logic data Programmable Pulse delay Discriminator ser|es:PPD-56 devices^inc. . w w 6 BIT TTL Interfaced D e s c r ip tio n : T h e P ro g ra m m a b le D is c rim in a to r M o d u le , P P D -5 6 series, is a very po w erfu l a n d v e rs a
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ppd-56
PPD-56
PPD-56-1
PPD-56-2
PPD-56-3
PPD-56-4
PPD-56-5
PPD-56-5M
PPD-56-6
PPD-56-7
PPD-56-8
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