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    M53210 Price and Stock

    FTS QTM532-100.000MBE-T

    XTAL OSC XO 100.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM532-100.000MBE-T 1
    • 1 $1.57
    • 10 $1.375
    • 100 $1
    • 1000 $0.734
    • 10000 $0.579
    		Buy Now

    FTS QTM532-100.000MDE-T

    XTAL OSC XO 100.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM532-100.000MDE-T 1
    • 1 $1.57
    • 10 $1.375
    • 100 $1
    • 1000 $0.734
    • 10000 $0.579
    		Buy Now

    TXC Corporation QTM532-100.000MDE-T

    Standard Clock Oscillators Timing XO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics QTM532-100.000MDE-T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.35
    • 10000 $1.29
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    TXC Corporation QTM532-10.000MBE-T

    Standard Clock Oscillators 5.0x3.2 CMOS Quartz Oscillator / Ceramic, 3.3V, +/-50ppm (-40 to 85C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics QTM532-10.000MBE-T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.782
    • 10000 $0.722
    		Get Quote

    TXC Corporation QTM532-10.000MCE-T

    Standard Clock Oscillators 5.0x3.2 CMOS Quartz Oscillator / Ceramic, 2.5V, +/-50ppm (-40 to 85C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics QTM532-10.000MCE-T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.782
    • 10000 $0.722
    		Get Quote
    Find more M53210 price and stock on Findchips.com

    M53210 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M53210124CE2-50 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124CE2-60 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124CJ2-50 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124CJ2-60 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124DE2-C50 Samsung Electronics Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124DE2-C60 Samsung Electronics Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124DJ2-C50 Samsung Electronics Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210124DJ2-C60 Samsung Electronics Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CB2-C50 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CB2-C60 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CE2-C50 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CE2-C60 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CJ2-C50 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CJ2-C60 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CW2-C50 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224CW2-C60 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224DE2 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224DE2-C50 Samsung Electronics Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224DE2-C60 Samsung Electronics Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    M53210224DJ2 Samsung Electronics 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF

    M53210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C


    Original     		PDF M53210804CY0/CT0-C 8Mx32 4Mx16 M53210804CY0/CT0-C 4Mx16, 8Mx32bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124CE2/CJ2 M53210124CE2/CJ2 1Mx16, M53210124C 1Mx32bits M53210124C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CW2/CB2 M53210224CW2/CB2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: M53210400CW0/CB0 M53210410CW0/CB0 DRAM MODULE M53210400CW0/CB0 & M53210410CW0/CB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0C is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0C


    Original     		PDF M53210400CW0/CB0 M53210410CW0/CB0 M53210410CW0/CB0 M5321040 4Mx32bits M53210400CW0-C cycles/64ms 24-pin

    Untitled

    Abstract: No abstract text available
    Text: M53210800CW0/CB0 M53210810CW0/CB0 DRAM MODULE M53210800CW0/CB0 & M53210810CW0/CB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0C


    Original     		PDF M53210800CW0/CB0 M53210810CW0/CB0 M53210810CW0/CB0 M5321080 8Mx32bits 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D


    Original     		PDF M53210800DW0/DB0 M53210810DW0/DB0 M53210810DW0/DB0 M5321080 8Mx32bits 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53210404BY0/BT0-C 4Mx32 4Mx16 M53210404BY0/BT0-C 4Mx16, 4Mx32bits

    8Mx32 dram simm

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804BY0/BT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210804BY0/BT0-C Revision History Version 0.0 (Sept., 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53210804BY0/BT0-C 8Mx32 4Mx16 M53210804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits 1Mx16bits 42-pin 72-pin M53210124DE2/DJ2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits 1Mx16bits 42-pin 72-pin M53210224DE2/DJ2

    Untitled

    Abstract: No abstract text available
    Text: M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0D


    Original     		PDF M53210400DW0/DB0 M53210410DW0/DB0 M53210410DW0/DB0 M5321040 4Mx32bits M53210400DW0-C cycles/64ms 24-pin

    K4F151611D

    Abstract: No abstract text available
    Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits M53210124D 1Mx16bits 42-pin 72-pin K4F151611D

    Untitled

    Abstract: No abstract text available
    Text: M53210224CE2/CJ2 DRAM MODULE M53210224CE2/CJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CE2/CJ2 M53210224CE2/CJ2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification


    Original     		PDF M53210400DW0/DB0 M53210410DW0/DB0 M53210400DW0/DB0 M53210410DW0/DB0 M5321040 4Mx32bits 24-pin 72-pin

    M53210

    Abstract: No abstract text available
    Text: M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53210224D


    Original     		PDF M53210224DE2/DJ2 M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits M53210224D M53210224DE2-C cycles/16ms 1Mx16bits 42-pin M53210

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D


    Original     		PDF M53210800DW0/DB0 M53210810DW0/DB0 M53210810DW0/DB0 M5321080 8Mx32bits 24-pin 72-pin

    KMM5321000BV-6

    Abstract: No abstract text available
    Text: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung M5321000BV co n s is t of eig h t CMOS 1 M x 4 bit


    OCR Scan     		PDF M5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 KMM5321000BV-8 110ns 130ns 150ns KMM5321000BV KMM5321000BV-6

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 M5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		PDF KMM5321OOOW/WG KMM5321000W 42-pin 72-pin 22/xF M5321000W-7 KMM5321000W-8 M5321000W-10

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES M5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns M5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns


    OCR Scan     		PDF KMM5321000AV/AVG 1Mx32 M5321000AV- KMM5321000AV- M5321000AV-10 130ns 150ns 180ns KMM5321000AV bitsx32

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		PDF 1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM

    FZK101

    Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
    Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974


    OCR Scan     		PDF Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001

    Untitled

    Abstract: No abstract text available
    Text: M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5321000BV is a 1M bits x 32 Dynam­ ic RAM high density memory module. The Samsung M5321000BV consist of eight CMOS 1 Mx 4 bit


    OCR Scan     		PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 110ns KMM5321000BV-7 130ns KMM5321000BV-8

    Untitled

    Abstract: No abstract text available
    Text: M5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5321000AV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung M5321000AV consist of eight CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


    OCR Scan     		PDF KMM5321000AV/AVG 1Mx32 KMM5321000AV- KMM5321000AV-10 100ns 130ns 150ns 180ns KMM5321000AV

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC b?E D • 7^4142 M5321000BV/BVG SHGK DDlSllb DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung M5321000BV is a 1M b its x 32 Dynam­ ic RAM high d e n sity m em ory m odule. The S am sung


    OCR Scan     		PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 22/iF 110ns KMM5321000BV-7 130ns