NE25139T1U73
Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
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NE25139
NE251
24-Hour
NE25139T1U73
NE25139
NE25139U74
NE25139-T1
NE25139T1U71
NE25139T1U72
NE25139U71
NE25139U72
NE25139U73
fet dual gate sot143
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TO253
Abstract: LCDA15
Text: LCDA15-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDA15-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD and lightning. Each device will protect one line in
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LCDA15-1
LCDA15-1
OT-143
TO253
LCDA15
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marking JT
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAS28 Features • • • • • • • • • Continuous reverse voltage:max.75V High switching speed:4ns.
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BAS28
500mA
OT-143
marking JT
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LCDA15C-1.TCT
Abstract: No abstract text available
Text: LCDA12C-1 and LCDA15C-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDAxxC-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD
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LCDA12C-1
LCDA15C-1
OT-143
LCDA15C-1.TCT
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TVS RS422
Abstract: No abstract text available
Text: SLVG2.8K UNIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW Microsemi’s proprietary Zener process provides low standoff voltages and the lowest standby current in the industry of 0.1µA. This 4 pin unidirectional array is designed for use in applications where protection is required at the board level from
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LCDA12C-1
Abstract: LCDA15C-1 diode marking code 12L
Text: LCDA12C-1 and LCDA15C-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDAxxC-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD
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LCDA12C-1
LCDA15C-1
OT-143
IPC-SM-782A
LCDA12C-1
LCDA15C-1
diode marking code 12L
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Untitled
Abstract: No abstract text available
Text: SLVE2.8K BIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW Microsemi’s proprietary process provides low standoff voltages and the lowest standby current in the industry of 0.1µA. This 4-pin bidirectional array is designed for use in applications where protection is required at the board level from voltage
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MSC1706
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SEMTECH MARKING sot-143
Abstract: SR70 R70 sot143
Text: SR70 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR70 has been specifically designed to protect sensitive components which are connected to data and transmission
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OT-143
SEMTECH MARKING sot-143
SR70
R70 sot143
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NE25139
Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
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NE25139
NE251
NE25139T1U74
24-Hour
NE25139
ne720b
transistor marking U72 ghz
NE25139-T1
NE25139U71
NE720
NE25139T1U74
NE25139T1U71
16E-13
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S3928
Abstract: Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes
Text: 13 A lpha Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes Features For High Volume Commercial Applications SOD 323 Industry Standard SO T-23, SO T-143, and S O D -323 Packages SOT 23 SOT 143 Tight Parameter Distribution High Signal Sensitivity
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T-143,
Q037\P-94r"
OT-143
--YO-10
S3928
Detector Diodes marking c
sot23 marking sa2
Surface Mount RF Schottky Barrier Diodes
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PJ 3139
Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
Text: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “
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b427414
Q001bS3
NE25137
NE25139
NE251
NE76084
Rn/50
PJ 3139
NEC Ga FET marking L
NE25139
DUAL FET
marking JE FET
fet dual gate sot143
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Untitled
Abstract: No abstract text available
Text: Central BAS28 Sem icon du ctor Corp. DUAL, ISOLATED HIGH SPEED SW ITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed
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BAS28
OT-143
0T84T
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SEMTECH MARKING sot-143
Abstract: No abstract text available
Text: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array ¡ n = [] & SLVG2.8 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
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TEL805-498-2111
CA91320
SEMTECH MARKING sot-143
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Low Voltage TVS Diode Array SLVE2.8 SLVE3.3 SLVG2.8 SLVG3.3 TEL: 805-498-2111 PRELIMINARY DESCRIPTION FA X: 805-498-3804 FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.
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NE25139
NE251
OT-143)
NE25139
E25139-T1
NE25139U71
NE25139T1U71
NE25139U72
E25139T1U72
NE25139U73
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz
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NE25139
NE251
OT-143)
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
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marking 2U 58 diode
Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Text: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz
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HSMS-2850
HSMS-2860
OT-23/
OT-143
260CC
OT-23
marking 2U 58 diode
marking 2U diode t5
marking code KE diode
L31 diode sot-23
marking diode KE
SOT23 MARKING KE
AT-05
MARKING- L31
diode marking code 2U
marking L31 SOT23
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SST6908
Abstract: SST6910 pa104
Text: SILICONIX INC IflE D • 8554735 QOlBlbl k ■ SST6908 SERIES H ÌS S 5& " \ N-Channel JFET Circuits The SST6908 Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input "over-voltage” while a highperformance JFET provides an effective amplifica
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SST6908
OT-143
SST6910
pa104
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NEC Ga FET marking A
Abstract: NE25139T1U74 NE25139U NE25139T1U71
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz
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NE25139
Vi32S
90CIM
NE251
NE25139T1
NE25139U74
24-Hour
NEC Ga FET marking A
NE25139T1U74
NE25139U
NE25139T1U71
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pu 81
Abstract: em 2860 L30 SOT143
Text: ÏÏXaË mLfim HP AE CWKLAERTDT * Surface Mount High Performance Schottky Diodes Technical Data HSMS-286X Seríes Features • Available in Surface Mount SOT-23, SOT-143 Packages • High D etection Sensitivity: 50 mV/ j,W at 915 MHz 35 mV/^W at 2.45 GHz 25 mV/p.W at 5.80 GHz
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HSMS-286X
OT-23,
OT-143
OT-23
5064-991OE
pu 81
em 2860
L30 SOT143
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FET marking FL
Abstract: TRANSISTOR MARKING FA D 756 transistor BCR400 Q62702-C2479 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s
Text: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2479
OT-143R
BCR400
023StOS
EHA07219
fl235b05
FET marking FL
TRANSISTOR MARKING FA
D 756 transistor
BCR400
transistor marking fl
3VS4
FLC103
Siemens transistors rf
marking W4s
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U73-U74
Abstract: 14E-14
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz
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NE25139
NE251
OT-143)
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
U73-U74
14E-14
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SEMTECH MARKING sot-143
Abstract: No abstract text available
Text: SLVE2.8 SEMTECH Today*« Rauiki.1 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and
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OT-143
SEMTECH MARKING sot-143
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fet dual gate sot143
Abstract: SGM2014M
Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is
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SGM2014M
SGM2014M
900MHz
Ga-18dB
OT-143
-64l0Â
fet dual gate sot143
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