Untitled
Abstract: No abstract text available
Text: KEMET Part Number: C0805N561J5GSH7189 C0805N561J5GSH7189, CDR31BP561AJSS-T&R Capacitor, ceramic, 560 pF, +/-5% Tol, 50V, C0G, 0805 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol T 1.3
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C0805N561J5GSH7189
C0805N561J5GSH7189,
CDR31BP561AJSS-T
14ed7fa2-1f31-4337-9e61-7b7499421578
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for
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fl23b320
0017Eflfi
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varistor ve 17
Abstract: VZA048XX vzd 300 VZD275 VZD420XX VZA060 VZC460 VZD275XX VZD250
Text: I ’iGSôaoS 0 Q Q 0 3 0 Ô THOMSON COMPONENTS THOMSON PASSIVE 14E 0 4 | VZ METÄL OXIDE VARISTOR PHYSICAL CHARACTERISTICS UL-recognized File Number E84108 S TABLE OF VALUES T max T max PART NUMBER VZG048XX VZG060XX VZG075XX VZG095XX VZG106XX VZG130XX VZG150XX
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E84108
VZG048XX
VZG060XX
VZG075XX
VZG095XX
VZG106XX
VZG130XX
VZG150XX
VZG175XX
VZG230XX
varistor ve 17
VZA048XX
vzd 300
VZD275
VZD420XX
VZA060
VZC460
VZD275XX
VZD250
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d1711
Abstract: MMBC1009F2
Text: S AMSUNG SEMí CONOUCíOR INC MMBC1009F2 14E D | ?*ii,4m3 0 00 72 3 0 ë | NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBC1009F2
T-31-19
OT-23
100MHz
d1711
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MMBA812M7
Abstract: MMBT5086 marking ja
Text: SAMSUNG SEMICONDUCTOR INC MMBA812M7 14E D §7 *11,4142 0 0 0 75 31 , T | PNP EPITAXIAL SILICON TRANSISTOR T-^l-Oq GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBA812M7
MMBT5086
OT-23
marking ja
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MMBC1009F4
Abstract: marking am
Text: ¡SAMSUNG SEMICONDUCTOR INC MMBC1009F4 14E D _ | 7 ^ 4 1 4 2 0007240 0 j T ~3/~ /? NPN EPITAXIAL SILICO N TRANSISTOR AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage
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OOQ72MO
MMBC1009F4
OT-23
marking am
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MMBC1009F3
Abstract: No abstract text available
Text: 'SAMSUNG SEM ICO NDUCTOR .INC MMBC1009F3 14E D |71k41»l2 0007531 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBC1009F3
T-31-19
OT-23
100MHz
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2929 transistor
Abstract: MMBT6427 MMBTA14 SOT-23 J
Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage
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0075T1
MMBTA14
MMBT6427
T-29-29
OT-23
100jjA,
2929 transistor
SOT-23 J
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MMBA811C7
Abstract: MMBT5086 transistor marking fl VC80
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current
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MMBA811C7_
MMBT5086
OT-23
100MHz
MMBA811C7
transistor marking fl
VC80
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514 transistor
Abstract: MMBC1622D7 b 514 transistor MMBC1622D6
Text: S A MS UN G SEMICO ND UCT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR — — “ — — :- :- rT i < v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C ! i Characteristic | Collector-Base Voltage
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MMBC1622D7
OT-23
MMBC1622D6
100mA,
100MHz
514 transistor
MMBC1622D7
b 514 transistor
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MMBT5086
Abstract: MMBTA70 transistor 571 MARKING VA SOT23
Text: SA MS UN G SEMICONDUCTOR INC MMBTA70 14E I 7‘1fc>‘1142 00073CU S | PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR f SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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MMBTA70
OT-23
MMBT5086
100hA,
100MHz
100KHz
transistor 571
MARKING VA SOT23
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MMBC1009F5
Abstract: transistor marking HB sot-89
Text: SAMSUNG S E M I C ON DU CT OR INC MMBC1009F5 14ED ^7^4145 0007241 5 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 I AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBC1009F5
T-31-19
OT-23
100MHz
transistor marking HB sot-89
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MMBC1623L6
Abstract: MMBC1623L3
Text: SA M S U N G SEMICONDUCTOR INC MMBC1623L6 14E 0 7 ^ 4 1 4 2 00072SQ 3 | NPN EPITAXIAL SILICON TRANSISTOR T -Ä t-fa AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voftage CoUector-Emitter Voltage Emitter-Base Voltage
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MMBC1623L6
OT-23
MMBC1623L3
100mA,
100mA.
100MHz
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la 4142
Abstract: MMBA811C6 MMBT5086
Text: SA MS UN G SEMICONDUCTOR INC MMBA811C6 14E D | 711,4142 □ DO?aati 1 | PNP EPITAXIAL SILICON TRANSISTOR _ J T - 23- DRIVER TRANSISTOR t °i SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBA811C6
OT-23
MMBT5086
100nA,
100MHz
la 4142
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MMBTA06
Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA
Text: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D | 7 c! b 4 1 4 a 0007531 fi | NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current
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MMBTA06
MPSA05
OT-23
100JJA,
100mA
100mA,
100mA
100MHz
Transistor driver
TRANSISTOR MARKING FA
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MARKING BL
Abstract: fS 4142 transistor 513 MMBC1622D6
Text: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBC1622D6
100mA,
100MHz
MARKING BL
fS 4142
transistor 513
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BCW33
Abstract: MMBT5088
Text: SAMSUNG SEMICONDUCTOR INC BCW33 14E D j 0007207 2 | NPN EPITAXIAL SILICON TRANSISTOR T - ^ - !‘ utlMCKAL r U n r U o t 1rlAINold 1UH SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C S ym bol C h a ra c te ris tic ; Collector-Base Voltage ' Collector-Emitter Voltage
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lfc414a
BCW33
MMBT5088
OT-23
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KSR1107
Abstract: KSR2107 t313
Text: SAMSUNG SEMICONDUCTOR INC 14E O | 714,4145 0007123 7 | PNP EPITAXIAL SILICON TRANSISTOR KSR2107 SWITCHING APPLICATION T-31-'3 Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit . • Built in bias Resistor (R,=22KO, R,=47KO)
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KSR2107
KSR1107
OT-23
-10/M,
-10mA,
KSR1107
KSR2107
t313
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la 4142
Abstract: MMBT5088 MMBT6429 Scans-0014323
Text: SAMSUNG SEMI C ONDU CT OR INC 14E MMBT6429 ' D § 7 ^ t , 41 42 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR : " AMPLIFIER TRANSISTOR r'r-avfl" SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage
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00072fi7
MMBT6429
MMBT5088
OT-23
100mA,
100MHz
la 4142
Scans-0014323
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BCW30
Abstract: MMBT5086 icao
Text: SAMS UN G SEMICON DUC TO R INC BCW30 14E 0 | 7*^4142 0007204 7 | PNP EPITAXIAL SILICO N TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 “ABSOLUTE MAXIMUM RATINGS Ì l i f 25°C ' Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base: Voltage
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BCW30
OT-23
MMBT5086
10bnA,
icao
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MMBT3904
Abstract: MMBT4124 TRANSISTOR 636
Text: ¡SAM SUNG SEM ICO NDUCTOR . INC MMBT4124 14E D | ?*1b4:t<l2 O O O T a tt. 7 | NPN EPITAXIAL SILICON TRANSISTOR .Tj-aR-fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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tUJ41M2
00075tt,
MMBT4124
MMBT3904
OT-23
10Breakdown
10f/A,
100MHz
100hA,
300ns,
TRANSISTOR 636
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BCW71
Abstract: MMBT5088
Text: SAMSUNG SEMICONDUCTOR INC _ BGW71 14E D | 00 0 7 2 1 A 7 Jjj NPN EPITAXIAL SILICON TRANSISTOR T -« g q GENERAL PURPOSE TRANSISTOR - ft S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C | Characteristic i Collector-Base Voltage j Collector-Emitter Voltage I Emitter-Base Voltage
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BCW71
MMBT5088
OT-23
35MHz
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JB marking transistor
Abstract: transistor marking JB MMBT5550 marking JB
Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic
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MMBT5550
10/iA,
JB marking transistor
transistor marking JB
marking JB
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