Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE T33 TRANSISTOR Search Results

    MARKING CODE T33 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE T33 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G9SX-BC202

    Abstract: AD322 g9sx-bc basic wiring diagram contactor EX Emergency Stop Drawing G9SX-AD322-T15 4 pin terminal block connector BC202 EN61508 D40A
    Text: Flexible Safety Unit G9SX CSM_G9SX_DS_E_5_1 Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis.


    Original     		IEC/EN61508 EN954-1 ISO13849-1 G9SX-BC202 AD322 g9sx-bc basic wiring diagram contactor EX Emergency Stop Drawing G9SX-AD322-T15 4 pin terminal block connector BC202 EN61508 D40A PDF

    D40A-1C

    Abstract: D40A-1C2 G9SX-NSA222-T03 G9SX-NS202 G9SX-NSA222-T03-RT G9SP-N10S omron g9sx-nsa g9sx-nsa222 z922 D40A
    Text: Compact Non-Contact Door Switch/Flexible Safety Unit D40A/G9SX-NS CSM_D40A_G9SX-NS_DS_E_5_1 Electronic Detection Mechanism for Better Stability in Non-contact Door Switch Operation Connection is also possible to a G9SP Safety Controller. •Complies with ISO 13849-1 Safety Category 3/PLd .


    Original     		D40A/G9SX-NS G9SP-N10S: G9SP-N10D/20S: D40A-1C D40A-1C2 G9SX-NSA222-T03 G9SX-NS202 G9SX-NSA222-T03-RT G9SP-N10S omron g9sx-nsa g9sx-nsa222 z922 D40A PDF

    welding machine wiring diagram

    Abstract: g9sx-BC202 hot air gun fan controller circuit G9SX-AD322-T15 g9sx-bc 24vdc motor forward reverse control diagram s34 zener diode varistor S14 k1 circuit diagram of door interlock system en61558
    Text: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. ■ Solid-state outputs excluding Expansion Units . ■ Detailed LED indications enable easy diagnosis. ■ TÜV Product Service certification for compliance


    Original     		IEC/EN61508 EN954-1 welding machine wiring diagram g9sx-BC202 hot air gun fan controller circuit G9SX-AD322-T15 g9sx-bc 24vdc motor forward reverse control diagram s34 zener diode varistor S14 k1 circuit diagram of door interlock system en61558 PDF

    welding machine wiring diagram

    Abstract: din en iso 13855 G9SX-GS226-T15-RC welding machine wiring diagram manual T71-T72 G9SX-GS226-T15-RT G9SX-BC202 welding machine transformer wiring diagram G9SX-GS226-T15 automatic brake failure indicator
    Text: Safety Guard Switching Unit G9SX-GS CSM_G9SX-GS_DS_E_6_1 A Safety Measure for Hazardous Operations That Does Not Lower Productivity • Two functions support two types of application: • Auto switching: For applications where operators work together with machines


    Original     		PDF

    440r-zbr520az1

    Abstract: guardmaster safety relay 440r-zbr520az1 GuardMaster 440r allen-bradley safety relay 700-ZBR520AZ1 Safety Relay GL324 800z-gl2 440r 800Z-GN GuardMaster
    Text: Bulletin 800Z Zero-Force  Touch Buttons 10 Type 4/4X/13, IP66 Bulletin 800Z Zero-Force Touch Buttons • • • • IEC and NEMA Style General Purpose Line Heavy Industrial Line Types 4/4X/13 and 4/13 IP66 • Internationally Rated Ergonomic Touch


    Original     		4/4X/13, 4/4X/13 440r-zbr520az1 guardmaster safety relay 440r-zbr520az1 GuardMaster 440r allen-bradley safety relay 700-ZBR520AZ1 Safety Relay GL324 800z-gl2 440r 800Z-GN GuardMaster PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    TPS73101-EP

    Abstract: TPS73115-EP TPS73150-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP TPS73130-EP
    Text: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection


    Original     		TPS731xx SBVS034M 150mA 30VRMS 10kHz 100kHz) TPS73101-EP TPS73115-EP TPS73150-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP TPS73130-EP PDF

    SOT-23 MARKING PWYQ

    Abstract: T31 Marking sot regulator PWYQ TPS73115-EP TPS73150-EP TPS73101-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP
    Text: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection


    Original     		TPS731xx SBVS034M 150mA TPS731xx SOT-23 MARKING PWYQ T31 Marking sot regulator PWYQ TPS73115-EP TPS73150-EP TPS73101-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    PQC5001T

    Abstract: PPC5001T FO-102
    Text: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.


    OCR Scan     		PPC5001T PQC5001T 711002b 00Mb422 PPC5001T PQC5001T T-33-05 711065b FO-102 PDF

    2SD1664

    Abstract: marking 2sd1664
    Text: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code


    OCR Scan     		2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: I 1 N AMER PHILIPS/DIS.CRETE MAINTENANCE TYPE ObE D bbSBTBl 0014^51 2 • LKE32002T LKE32004T T -Si-os' ~ MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		LKE32002T LKE32004T 32002T 32004T PDF

    MKB12140W

    Abstract: common base amplifier circuit designing
    Text: _I I N AMER P HI LI PS/DISCRETE ObE D _ • 0015041 1 MAINTENANCE TYPE MKB12140W T - 33—iS PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.


    OCR Scan     		S3131 MKB12140W 10/is, common base amplifier circuit designing PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU


    OCR Scan     		47kfi) OT-323 B35bG5 PDF

    RTC11175Y

    Abstract: MRB11175Y
    Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		MRB11175Y FO-67 T-33-/LS 7Z21013 7294SÃ RTC11175Y MRB11175Y PDF

    transistor 135b

    Abstract: No abstract text available
    Text: I I N AMER P H I L I P S / D I S C R E T E ObE D bbS3131 D01S171 3 • RV3135B5X P U L S E D P O W E R T R A N S IS T O R F O R S -B A N D R A D A R N-P-N transistor for use in common-base pulsed power amplifiers for S-band radar 3,1 to 3,5 GHz . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		bbS3131 D01S171 RV3135B5X 722////////A D01S174 transistor 135b PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,


    OCR Scan     		bb53T31 PTB42001X PTB42002X PTB42001X PTB42002X PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3R31 00244b2 451 ■ APX N AMER PHILIPS/DISCRETE BC849 BC850 b7E 1 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage V g E = 0 Collector-emitter voltage (open base)


    OCR Scan     		bbS3R31 00244b2 BC849 BC850 10juA; bb53T31 DD24Mbb PDF

    r3305

    Abstract: PTB32005X PTB32001X PTB32003X
    Text: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PTB32001X PTB32003X PTB32005X bfci53cà 001510e} PTB32003X r3305 PTB32005X PDF

    MARKING HRA

    Abstract: 2SD2171S Wr1c 2SD2351
    Text: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A 2SD2537 / 2SD2171S I •Feature* •Absolute maximum ratings (Ta=25fc) 1 ) High DC current gain. 2) High emitter-base voltage. (Vcbo=12V Min.) 3 ) Low VcE(iai). (Max. 0.3V at lc/la=500/10mA)


    OCR Scan     		2SD2537 2SD2171S 2SD2351 2SD2226K 2SD2227S 2SD2171S 100ms 500/10mA) MARKING HRA Wr1c PDF

    bel 187 transistor

    Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
    Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn PDF

    application for bt 151

    Abstract: LTE42005S LTE42008R R3305
    Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		bL53131 LTE42005S LTE42008R LTE42005S application for bt 151 LTE42008R R3305 PDF