Untitled
Abstract: No abstract text available
Text: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing Frequency 2.50+/- 0.2 GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3
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Original
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MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
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PDF
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Untitled
Abstract: No abstract text available
Text: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency
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Original
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MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
MIL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: I587 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency Contact Sales Channel for available frequencies
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Original
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MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
MIL-STD-202,
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PDF
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TCXO
Abstract: No abstract text available
Text: I587/I787 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing GPS, GPS Module CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 Frequency Contact Sales Channel for available frequencies
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Original
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I587/I787
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
TCXO
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PDF
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Untitled
Abstract: No abstract text available
Text: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3
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Original
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I583/I783
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
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PDF
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Untitled
Abstract: No abstract text available
Text: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3
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Original
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I583/I783
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
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PDF
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TCXO
Abstract: No abstract text available
Text: I583/I783 Series 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Applications: Product Features: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing 2.50+/- 0.2 Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3
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Original
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I583/I783
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
TCXO
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PDF
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Untitled
Abstract: No abstract text available
Text: 2.0 mm x 2.5 mm Ceramic Package SMD TCXO Product Features: I583/I783 Series Applications: Low Current Consumption Ultra Miniature Package RoHS Compliant Compatible with Leadfree Processing Server & Storage CDMA/WCDMA 802.11 / Wifi T1/E1, T3/E3 2.50+/- 0.2
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Original
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I583/I783
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
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PDF
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TRANSISTOR MARKING YB 1L
Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738
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OCR Scan
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2SC4841
OT89/SC62)
TRANSISTOR MARKING YB 1L
2SK 2SA 2SC equivalent
ON 4497 HF transistor
1B01F
transistor 2sc 1586
i203 transistor
transistor 2sk power amp
transistor bc 2sk
transistor 2sk 70
TBC846
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PDF
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FDC658AP
Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.
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FDC658AP
FDC658AP
Single P-Channel, Logic Level, PowerTrench MOSFET
marking I58
marking 58A
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PDF
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alternator diode 35a 9
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Applications Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode
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Original
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FDB8441
FDB8441
215nC
alternator diode 35a 9
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PDF
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Untitled
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications ̈ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A ̈ Powertrain Management ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Solenoid and Motor Drivers ̈ Low Miller Charge ̈ Electronic Steering
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Original
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FDB8441
215nC
FDB8441
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PDF
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Untitled
Abstract: No abstract text available
Text: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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Original
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FDD6630A
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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Original
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FDD6630A
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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Original
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FDD5670
O-252
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PDF
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FDC8878
Abstract: No abstract text available
Text: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
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Original
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FDC8878
FDC8878
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PDF
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Untitled
Abstract: No abstract text available
Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
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Original
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FDC8886
FDC8886
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Original
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FDMS015N04B
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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Original
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FDMC7680
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PDF
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FDD86110
Abstract: No abstract text available
Text: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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Original
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FDD86110
FDD86110
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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Original
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FDMC7680
FDMC7680
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PDF
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FDC8884
Abstract: marking I58
Text: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
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Original
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FDC8884
FDC8884
marking I58
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PDF
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8884 mosfet
Abstract: No abstract text available
Text: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
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Original
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FDMA8884
FDMA8884
8884 mosfet
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PDF
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N_CHANNEL MOSFET 100V MOSFET
Abstract: No abstract text available
Text: FDMS015N04B N-Channel PowerTrench MOSFET 40V, 100A, 1.5mW Features Description • RDS on = 1.13mW (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Original
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FDMS015N04B
FDMS015N04B
N_CHANNEL MOSFET 100V MOSFET
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PDF
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