LM7805 M SMD
Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd
LM7805 footprint
PG-RFP-10
RO4320
smd transistor marking C14 8
LM7805
smd transistor marking L5
LM7805 smd VOLTAGE REGULATOR
elna 50v
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LM7805 smd
Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 smd
LM7805 smd 8 pin
LM7805 M SMD
SMD TRANSISTOR MARKING l4
LM7805
smd transistor marking wa
LM7805 05
lm7805 datasheet
C17-R2
elna ds
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LM7805 M SMD
Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
LM7805 M SMD
LM7805 smd
C5 MARKING TRANSISTOR
lm7805 datasheet future
LM7805 smd 8 pin
elna 50v
transistor smd marking ND
LM7805
TPSE106K050R0400
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
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PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
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240101S
Abstract: No abstract text available
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
240101S
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PTF240101S
Abstract: LM7805
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
LM7805
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200B
Abstract: BCP56 LM7805 PTFA210451E infineon gold
Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210451E
PTFA210451E
45-watt,
200B
BCP56
LM7805
infineon gold
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Untitled
Abstract: No abstract text available
Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized
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PTFA261301E
PTFA261301E
130-watt,
CDMA2000
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ssy 1920
Abstract: LM7805 SSY C5
Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
PTFA191001F*
ssy 1920
LM7805
SSY C5
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LM7805
Abstract: PTFA210301E
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
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PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
LM7805
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transistor di 960
Abstract: No abstract text available
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-34288-2
transistor di 960
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BCP56
Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201GL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
BCP56
LM7805
A0912
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AT27280
Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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PTFA212002E
PTFA212002E
200-watt,
AT27280
variable capacitor ceramic 25pF
AT 0340 TEMEX
LM7805 05
LM7805 smd 8 pin
SMD CAPACITOR L27
smd transistor marking l6
LM7805
SMD TRANSISTOR MARKING 904
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elna capacitor 22uf
Abstract: No abstract text available
Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the
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PTFA041001E
PTFA041001F
100-watt,
H-30248-2
PTFA041001FT
H-31248-2
elna capacitor 22uf
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Untitled
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA210601E
PTFA210601F
60-watt,
H-30265-2
PTFA210601F*
H-31265-2
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A2103
Abstract: No abstract text available
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
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PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
A2103
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LM7805
Abstract: H-30265-2 lm 2094
Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210701E
PTFA210701E
70-watt,
H-30265-2
PTFA210701F*
H-31265-2
LM7805
H-30265-2
lm 2094
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Untitled
Abstract: No abstract text available
Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and
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PTFA081501E
PTFA081501F
150-watt,
CDMA2000
PTFA081501F*
IS-95
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d 417 transistor
Abstract: No abstract text available
Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA211001E
PTFA211001F
100-watt,
PTFA211001F*
d 417 transistor
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A211801E
Abstract: 200B103 LM7805 PTFA211801E
Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA211801E
PTFA211801F
180-watt,
2140dangerous
A211801E
200B103
LM7805
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C66065-A2326-C001-01-0027
Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770
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PTFA070601E
PTFA070601F
PTFA070601E
PTFA070601F
60-watt
H-36265-2
H-37265-2
C66065-A2326-C001-01-0027
transistor a102
r025 capacitor
elna 50v
INFINEON schematic diagram
200B
BCP56
LM7805
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Untitled
Abstract: No abstract text available
Text: STL70N4LLF5 Automotive-grade N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS RDS on max ID STL70N4LLF5 40 V 6.7 mΩ 18 A • Designed for automotive applications and
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STL70N4LLF5
AEC-Q101
DocID15229
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100uf HFK
Abstract: HFK CAPACITOR 100 HFK capacitor
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-33288-2
H-34288-2
100uf HFK
HFK CAPACITOR
100 HFK capacitor
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