oki cross
Abstract: MG63P MG64P MG65P b0268
Text: DATA SHEET O K I A S I C P R O D U C T S MG63P/64P/65P 0.25µm Embedded DRAM/ Customer Structured Arrays November 1998 MG63P/64P/65P 0.25µm Embedded DRAM/Customer Structured Arrays DESCRIPTION Oki’s 0.25 µm MG63P/64P/65P Application-Specific Integrated Circuit ASIC provides the ability to
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MG63P/64P/65P
MG63P/64P/65P
1-800-OKI-6994
oki cross
MG63P
MG64P
MG65P
b0268
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adsp-210XX
Abstract: ADSP-21160 SF10 SF12 SF13 SF14 SF15 ADSP21160 0X48 I15-I0
Text: ADSP-21160 SHARC DSP Instruction Set Reference Revision 2.0, November 2003 Part Number 82-001967-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document
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ADSP-21160
N7-62
32-bit
adsp-210XX
SF10
SF12
SF13
SF14
SF15
ADSP21160
0X48
I15-I0
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2526-Form E
Abstract: 2513-V13 DN 25 pn 40 rf flange stiffness diaphragm pressure sensor 2526-Form 1092-B2 265GR S265W 2526E ABB pressure transmitter series 2600T capillary
Text: Data Sheet SS/S265-EN_04 2600T Series Pressure Transmitter S265 Remote seals with capillary tube Wide range of remote seal types - Allows optimum design for each application without compromising performance Large selection of options, materials and fill fluids
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SS/S265-EN
2600T
3KXP600002R1001
2526-Form E
2513-V13
DN 25 pn 40 rf flange
stiffness diaphragm pressure sensor
2526-Form
1092-B2
265GR
S265W
2526E
ABB pressure transmitter series 2600T capillary
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fox 515 abb
Abstract: AM29BX8 tqm860 FE1600 GPR circuit schematic diagram full MPC5200 schematic TQM860L ALL TYPE IC DATA AND manual substitution BOOK FE8700 LXT971ALE
Text: Lite5200B User’s Manual Devices Supported: MPC5200B LITE5200BUM Rev. 0 10/2005 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road
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Lite5200B
MPC5200B
LITE5200BUM
CH370
603-specific)
fox 515 abb
AM29BX8
tqm860
FE1600
GPR circuit schematic diagram full
MPC5200 schematic
TQM860L
ALL TYPE IC DATA AND manual substitution BOOK
FE8700
LXT971ALE
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PDF
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ADNS-7700-HCMY
Abstract: A7700 ADNS-7700 VCSEL die BUT20
Text: ADNS-7700 One chip USB LaserStream Mouse Sensors Data Sheet Description Features The ADNS-7700 series are compact, low cost, one chip USB LaserStreamTM mouse sensors designed for implemention of a non-mechanical tracking engine in computer mice. x One chip USB laser mouse sensor with VCSEL integrated
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ADNS-7700
ADNS-7700
22-pin
ADNS-6180-001
ADNS-6180-002
OTPLOCK27
OTPLOCK26
OTPLOCK25
OTPLOCK24
ADNS-7700-HCMY
A7700
VCSEL die
BUT20
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0xC100
Abstract: ADNS7700 ADNS-7700-HCMY A7700 BUT20
Text: ADNS-7700 One chip USB LaserStream Mouse Sensors Data Sheet Description Features The ADNS-7700 series are compact, low cost, one chip USB LaserStreamTM mouse sensors designed for implemention of a non-mechanical tracking engine in computer mice. • One chip USB laser mouse sensor with VCSEL integrated
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ADNS-7700
ADNS-7700
22-pin
ADNS-6180-001
ADNS-6180-002
OTPLOCK27
OTPLOCK26
OTPLOCK25
OTPLOCK24
0xC100
ADNS7700
ADNS-7700-HCMY
A7700
BUT20
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc.fc.53131 0015233 3 OLE » RZB12100Y L r-s s - i< r PULSED MICROW AVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications, It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12100Y
bb53T31
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PM100DHA060
Abstract: single phase inverter IC IGBT single phase inverter IGBT BP107 single phase IGBT inverter bridge PM100*060
Text: P OWEREX INC S IE • D 7 2 ci H b S l GGDS7Gfc. f b43 *P R X PM 100D H A060 ~r ‘5 ' 7' z 7 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB llim O C Î^ ^ -3 M o d u lB S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 g jn g je pfrggQ
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0Q0S70b
PM100DHA060
BP107,
Amperes/110-230
PM100DHA060
InchesM100DHA060
000S713
single phase inverter IC IGBT
single phase inverter IGBT
BP107
single phase IGBT inverter bridge
PM100*060
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RZB12100Y
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D • bfa53*i31 00152fl3 3 H ~ “ Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.
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FO-57C)
RZB12100Y
bk53131
001550b
RZB12100Y
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D • 1,1,53=131 D O I U S S a ■ BD T29; 29A BD T29B; 29C r - 33 -07 SILICON EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BDT30 series.
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BDT30
TIP29
BDT29
bbS3T31
T-33-Q9
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Untitled
Abstract: No abstract text available
Text: " 7 ^ 5 3 ^ /1 RZ2731B16W Data sheet status date of Issue Produci specification NPN silicon planar epitaxial mierowavejDOwer tandis*0* June 1992 :-p h i l i p s st7 ]> • 711002b QGHbSbO 145 i n t e r n a t i o n a l FEATU R ES A P P LIC A T IO N • Interdigitated structure; high
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RZ2731B16W
711002b
FO-57D
711DflSb
711065b
Q04b5bS
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BFR64
Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.
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BFQ34
BFR64
7z72605
BFR64
multi-emitter transistor
BFR64 DATA
vk200 philips
vk200 coil
VK-200-10
7Z7Z609
Transistor D 798
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Untitled
Abstract: No abstract text available
Text: Oki Semiconductor MG63P/64P/65P_ 0.25|im Embedded DRAM/Customer Structured Arrays DESCRIPTION Oki's 0.25 |a,m M G 63P/64P/65P Application-Specific Integrated Circuit ASIC provides the ability to embed large blocks of Synchronous DRAM (SDRAM) into an embedded array architecture called the
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MG63P/64P/65P_
63P/64P/65P
G6xPB06
G6xPB08
6xPB10
6xPB12
G6xPB14
G6xPB16
6xPB18
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PM30RHC060
Abstract: 7s14b mb 428 ic data 2 anode igbt inverter circuit diagram BP107 circuit diagram of 600 volt UPS wn 428 9300-5D 93005 mb 428
Text: POIdEREX INC _ 51E D IQUBffiX • 72T4b21 ODOSbtib 137 » P R X PM30RHC060 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln te llïlT tO C f ^ ^ - 3 M o d u l e s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j h r e e phase + Brake
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72T4b21
PM30RHC060
BP107,
Amperes/110-230
20kHz)
TB11MH
0005b7S
PM30RHC060
7s14b
mb 428 ic data
2 anode igbt inverter circuit diagram
BP107
circuit diagram of 600 volt UPS
wn 428
9300-5D
93005
mb 428
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mb 428 ic data
Abstract: 2K28 lg smd transistor smd transistor ng ha k206 K206 transistor
Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50X DESCRIPTION BUK206-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK202-50X
BUK206-50X
100tn
mb 428 ic data
2K28
lg smd transistor
smd transistor ng ha
k206
K206 transistor
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Untitled
Abstract: No abstract text available
Text: MI TSUBI SHI M E M O R Y C A R D STATIC RAM CARDS 8/16-bit Data Bus Static R A M Card Co n n e c t o r T y p e Two-piece 68-pin M M M M M M M M M M M M M M F 365 J - L5 D A F 365 J\ J1 D A F 3 12 9 L5 D A F 3 1 2 9 J1 D A F 3 2 5 7- L5 D A F 3 2 5 7 J1 D A
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8/16-bit
68-pin
R2325
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MITSUBISHI ram card 60pin
Abstract: STGL 52
Text: MITSUBISHI MEM OR Y CARD S T A T I C RAM CA RDS MF3257-MLDAPXX 16-bit D ata Bus M F 3 5 13 - M L D A P X X Static R A M C ard Connector Type Two-piece 60-pin / ~ D E S C R IP T IO N M its u bis hi's • 60-pin connector static RAM cards provide large ■ 16-bit data width
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MF3257-MLDAPXX
16-bit
60-pin
60-pin
60-pin,
68P-004
34PIN
35PIN
68P-005
MITSUBISHI ram card 60pin
STGL 52
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PDF
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Untitled
Abstract: No abstract text available
Text: intei Intel 440GX AGPset: 82443GX Host Bridge/Controller Datasheet June 1998 Order Number: 290638-001 in t e l Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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440GX
82443GX
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532200 Series SEMICONDUCTOR 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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HYM532200
32-bit
HY514400
22/iF
HYM532200M
HYM532200MG
1CD01-20-MAY93
4b750Ã
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Untitled
Abstract: No abstract text available
Text: juPD75308B 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The //PD75308B is a 75X Series 4-bit single-chip microcomputer capable of the same data processing as an 8-bit microcomputer. It is a low voltage operation version of the /IPD75308 with on-chip LCD controller/driver. Operation at an
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juPD75308B
//PD75308B
/IPD75308
C1983
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KM611001
Abstract: KM611001-20 KM611001-25 KM611001-35 A2326
Text: CM OS SRAM KM611001 1,048,576 WORD x 1 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100//A (max.) L-ver. only 2mA (max.) Operating KM611001-20 :130m A (max.)
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KM611001
35ris
100//A
KM611001-20
130mA
KM611001-25
110mA
KM611001-35
100mA
KM611001P/LP
KM611001
KM611001-20
KM611001-25
KM611001-35
A2326
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PDF
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tda7294
Abstract: TDA7294 application note
Text: n * 7 z j S C S -T H O M S O N # . TDA7294 IM M i[L i« ô M ]0 (ê § 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ADVANCE DATA • VERY HIGH OPERATING VOLTAGE RANGE (±40V ■ DMOSPOWER STAGE ■ HIGH OUTPUT POWER (UP TO 100W MU SIC POWER) ■ MUTING/STAND-BY FUNCTIONS
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TDA7294
TDA7294
Multiwatt15
2200jiF
1N4148
TDA7294 application note
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PDF
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Untitled
Abstract: No abstract text available
Text: Intel. InteI/40 Graphics Accelerator Datasheet Release Date: April, 1998 Order Number: 2^06 :8-00:^ Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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InteI/40â
04565-001-Sao
USA/0498/LMA
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mb 428 ic data
Abstract: 33E marking
Text: M I CR ON T E C H N O L O G Y INC 33E » • b lllS M T GQQB7bl^ S « M R N T H tr Z l-O S , SRAM 1 MEG X 1 SRAM '> a ' FEATURES • High speed: 25,35, and 45ns • High-performance, low-power, CMOS double metal process • Single +5V ±10% power supply
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28L/400
400mil)
T-46-23-05
mb 428 ic data
33E marking
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