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    MBRA140T3 Price and Stock

    onsemi MBRA140T3G

    DIODE SCHOTTKY 40V 1A SMA
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    DigiKey MBRA140T3G Digi-Reel 16,792 1
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    MBRA140T3G Cut Tape 16,792 1
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    MBRA140T3G Reel 15,000 5,000
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    Verical MBRA140T3G 15,977 71
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    Quest Components MBRA140T3G 19,640
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    MBRA140T3G 4,000
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    MBRA140T3G 945
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    TME MBRA140T3G 8,387 1
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    Richardson RFPD MBRA140T3G 10,000
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    Avnet Asia MBRA140T3G 9 Weeks 15,000
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    Component Electronics, Inc MBRA140T3G 979
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    onsemi MBRA140T3

    DIODE SCHOTTKY 40V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRA140T3 Reel 5,000
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    Quest Components MBRA140T3 50
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    Component Electronics, Inc MBRA140T3 940
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    onsemi MBRA140T3G.

    Schottky Rectifier, 1A, 40V, Sma, Full Reel; Repetitive Peak Reverse Voltage:40V; Average Forward Current:1A; Diode Configuration:Single; Diode Case Style:Do-214Ac (Sma); No. Of Pins:2Pins; Forward Voltage Max:550Mv; Product Range:- Rohs Compliant: Yes |Onsemi MBRA140T3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRA140T3G. Reel 5,000
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    Motorola Semiconductor Products MBRA140T3

    1 A, 40 V, SILICON, SIGNAL DIODE
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    Quest Components MBRA140T3 640
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    MBRA140T3 75
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    Others MBRA140T3G

    INSTOCK
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    Chip 1 Exchange MBRA140T3G 12,500
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    MBRA140T3 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRA140T3 Formosa Chip Schottky Barrier Diodes - Silicon epitaxial planer type Original PDF
    MBRA140T3 Motorola Surface Mount Schottky Power Rectifier Original PDF
    MBRA140T3 Motorola SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS Original PDF
    MBRA140T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRA140T3 On Semiconductor 1A 40V Schottky Rectifier; Package: SMA; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    MBRA140T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRA140T3/D On Semiconductor 1 AmpERES 40 VOLTS Original PDF
    MBRA140T3-D On Semiconductor Surface Mount Schottky Power Rectifier SMA Power S Original PDF
    MBRA140T3G EIC Semiconductor Schottky Barrier Diodes Original PDF
    MBRA140T3G On Semiconductor 1A 40V Schottky Rectifier; Package: SMA; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    MBRA140T3G On Semiconductor 1A 40V Schottky Rectifier Original PDF

    MBRA140T3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking b14 on semiconductor

    Abstract: B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 r14525 MBRA140T3/D marking b14 on semiconductor B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA PDF

    diode schottky B14

    Abstract: marking b14 diode
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 diode schottky B14 marking b14 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D PDF

    schottky DIODE MOTOROLA B14

    Abstract: Diode Motorola B14 Diode B14 Motorola
    Text: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview M BR A 140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . em p lo ying th e S cho ttky B arrier principle in a large area m e ta l-to -s ilic o n


    OCR Scan     		MBRA140T3/D 140T3 schottky DIODE MOTOROLA B14 Diode Motorola B14 Diode B14 Motorola PDF

    MBRA140T3G

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D MBRA140T3G PDF

    403B-01

    Abstract: 100E6 MBRA140T3-D Motorola b4 motorola package marking for sma diodes 100E3 403B MBRA140T3 Motorola 406 schottky power rectifier MOTOROLA
    Text: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a large area metal–to–silicon


    Original     		MBRA140T3/D MBRA140T3 MBRA140T3/D* 403B-01 100E6 MBRA140T3-D Motorola b4 motorola package marking for sma diodes 100E3 403B MBRA140T3 Motorola 406 schottky power rectifier MOTOROLA PDF

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original     		MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc PDF

    MBRA140T3G

    Abstract: No abstract text available
    Text: TH97/10561QM MBRA140T3G IATF 0060636 SGS TH07/1033 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 40 Volts Io : 1.0 Ampere SMA 5.3 ± 0.35 4.2 ± 0.25 1.3 ± 0.2 FEATURES : * * * * * TW00/17276EM Very Low Forward Voltage Drop Highly Stable Oxidation Passivated Junction


    Original     		TH97/10561QM MBRA140T3G TH07/1033 TW00/17276EM UL94V-O MBRA140T3G PDF

    marking code onsemi Diode B14

    Abstract: marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 r14525 MBRA140T3/D marking code onsemi Diode B14 marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor PDF

    schottky DIODE MOTOROLA B14

    Abstract: Diode Motorola B14 Motorola B14 motorola diode marking B14 100E3 403B MBRA140T3 Diode B14 Motorola
    Text: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a large area metal–to–silicon


    Original     		MBRA140T3/D MBRA140T3 MBRA140T3/D* schottky DIODE MOTOROLA B14 Diode Motorola B14 Motorola B14 motorola diode marking B14 100E3 403B MBRA140T3 Diode B14 Motorola PDF

    SMA CASE 403D-02 footprint

    Abstract: No abstract text available
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 MBRA140T3/D SMA CASE 403D-02 footprint PDF

    403D

    Abstract: MBRA140T3 MBRA140T3G b14 diode surface mount
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 MBRA140T3/D 403D MBRA140T3 MBRA140T3G b14 diode surface mount PDF

    Untitled

    Abstract: No abstract text available
    Text: Certificate TH97/10561QM MBRA140T3G Certificate TW00/17276EM SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 40 Volts Io : 1.0 Ampere SMA FEATURES : 4.4 ± 0.2 1.3 ± 0.2 Very Low Forward Voltage Drop Highly Stable Oxidation Passivated Junction Guardring for Stress Protection


    Original     		TH97/10561QM MBRA140T3G TW00/17276EM UL94V-O PDF

    100E3

    Abstract: marking b14 diode
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 100E3 marking b14 diode PDF

    403D

    Abstract: MBRA140T3 MBRA140T3G
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 MBRA140T3/D 403D MBRA140T3 MBRA140T3G PDF

    B14 diode on semiconductor

    Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 r14525 MBRA140T3/D B14 diode on semiconductor marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14 PDF

    95OC

    Abstract: MBRA140T3 403D-01
    Text: MBRA140T3 SURFACE MOUNT SCHOTTKY POWER RECTIFIER SMA Power Surface Mount Package SMA .employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 Width250 95OC MBRA140T3 403D-01 PDF

    95OC

    Abstract: MBRA140T3
    Text: MBRA140T3 SURFACE MOUNT SCHOTTKY POWER RECTIFIER SMA Power Surface Mount Package .employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3 95OC MBRA140T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    F06A diode

    Abstract: "red LED Driver" capacitor 22PF dual resistor npn 500ma LED with 3v INPUT VOLTAGE LT3592 MSOP-10
    Text: LT3592 500mA Wide Input Voltage Range Step-Down LED Driver with 10:1 Dimming DESCRIPTION FEATURES n n n n n n n n Wide Input Voltage Range Operation from 3.6V to 36V Resistor Adjustable 400kHz–2.2MHz Switching Frequency Shorted and Open LED Protected Internal Switch Current Sense Resistor


    Original     		LT3592 500mA 400kHz 50mA/500mA 10-Lead MSOP-10 accur000 QFN-16 LT3590 850kHz, F06A diode "red LED Driver" capacitor 22PF dual resistor npn 500ma LED with 3v INPUT VOLTAGE LT3592 PDF

    SAT INDUCTOR

    Abstract: DO1608C-154 MBR0530 MBR0530T1 MIC2571 MIC2571-1BMM MIC2571-2BMM Motorola BOOST smps 594D156X0025C2T
    Text: MIC2571 Micrel MIC2571 Single-Cell Switching Regulator Preliminary Information General Description Features Micrel’s MIC2571 is a micropower boost switching regulator that operates from one alkaline, nickel-metal-hydride cell, or lithium cell. The MIC2571 accepts a positive input voltage between 0.9V


    Original     		MIC2571 MIC2571 MIC2571-1) MIC2571-2) fi000 60005Sanford, SAT INDUCTOR DO1608C-154 MBR0530 MBR0530T1 MIC2571-1BMM MIC2571-2BMM Motorola BOOST smps 594D156X0025C2T PDF

    NCN4555

    Abstract: iso7816 sim SIMCARD Schematic ISO7816 NCN4555MN NCN4555MNG NCN4555MNR2 NCN4555MNR2G 3G system diagram j8 QFN16
    Text: NCN4555 1.8V / 3V SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555


    Original     		NCN4555 NCN4555 ISO7816-3 IMT-2000/3G QFN-16 488AK NCN4555/D iso7816 sim SIMCARD Schematic ISO7816 NCN4555MN NCN4555MNG NCN4555MNR2 NCN4555MNR2G 3G system diagram j8 QFN16 PDF