MGF1951A
Abstract: MGF1951A-01 MGF1951
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES
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MGF1951
MGF1951A
MGF1951A
13dBm
12GHz
MGF1951A-01
MGF1951A-01
MGF1951
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k MESFET S parameter
Abstract: MGF1953A MGF1953A-01 mesfet fet
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1953A
MGF1953A
100mW
20dBm
12GHz
MGF1953A-01
Ga107
k MESFET S parameter
MGF1953A-01
mesfet fet
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k MESFET S parameter
Abstract: MGF1952A-01 MGF1952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1952A
MGF1952A
17dBm
12GHz
MGF1952A-01
k MESFET S parameter
MGF1952A-01
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MGF1954A-01
Abstract: k MESFET S parameter MGF1954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1954A
MGF1954A
200mW
23dBm
12GHz
MGF1954A-01
MGF1954A-01
k MESFET S parameter
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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RF MESFET S parameters
Abstract: transistor GaAs FET s parameters NES2427P-30
Text: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-30
NES2427P-30
24-Hour
RF MESFET S parameters
transistor GaAs FET s parameters
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nec k 813
Abstract: NES1821P-30
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear
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NES1821P-30
NES1821P-30
nec k 813
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CHP2085
Abstract: phase shifter
Text: CHP2085 S-band Phase Shifter / Switch GaAs Monolithic Microwave IC 13 Description The CHP2085 is a S-band monolithic 5 bits phase shifter / switch. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and
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CHP2085
CHP2085
DSCHP20850046
15-feb
00DSCHP20850046
phase shifter
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s band
Abstract: CHA5082
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.
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CHA5082
CHA5082
27dBm
-20dBm)
DSCHA50826354
s band
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04 monolithic amplifier
Abstract: No abstract text available
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.
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CHA5082
CHA5082
27dBm
-20dBm)
DSCHA50826354
04 monolithic amplifier
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NE6500496
Abstract: NEC Microwave Semiconductors
Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage
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NE6500496
NE6500496
24-Hour
NEC Microwave Semiconductors
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NE6501077
Abstract: NEC Microwave Semiconductors
Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage
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NE6501077
NE6501077
24-Hour
NEC Microwave Semiconductors
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hmt design data book
Abstract: TGA2602-SM J0357
Text: HMT-TQT-TGA2602-SM MESFET MODEL Model Features Broadband DC-6GHz Non-linear (Angelov model) Measurement validations: - DCIV - Multi bias S-parameter - Noise parameters - Single tone Power sweep (0.9 and 1.9GHz) - Two tone Power sweep (0.9 and 1.9GHz) - Load pull (0.9 and 1.9GHz)
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HMT-TQT-TGA2602-SM
TGA2602-SM
HMT-TQT-TGA2602-SM
hmt design data book
TGA2602-SM
J0357
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
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L to Ku Band Low Noise GaAs MESFET
Abstract: No abstract text available
Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY
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NE67400
NE67483B
NE674is
L to Ku Band Low Noise GaAs MESFET
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4435 ag
Abstract: 5q 1265 rf
Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz
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NE76100
E76100
NE76100
NE76100N
NE76100M
4435 ag
5q 1265 rf
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siemens Pm 90 87
Abstract: PC 3131
Text: S IE M E N S CLX34 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX34
CLX34-00
CLX34-05
CLX34-10
MWP-25
CLX34-nn:
QS9000
siemens Pm 90 87
PC 3131
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLX32 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX32
CLX32-00
CLX32-05
CLX32-10
MWP-25
CLX32-nn:
QS9000
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLX32 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX32
CLX32-00
CLX32-05
MWP-25
CLX32-10
CLX32-nn:
QS9000
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PH ON 823 m 0233
Abstract: marking code PH 817
Text: S IE M E N S CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLY35
CLY35-00
CLY35-05
CLY35-10
MWP-35
CLY35-nn:
QS9000
PH ON 823 m 0233
marking code PH 817
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SiEMENS PM 350 98
Abstract: No abstract text available
Text: S IE M E N S CLX27 HiRel X-Band Ga As Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX27
CLX27-00
CLX27-05
CLX27-10
MWP-25
CLX27-nn:
QS9000
SiEMENS PM 350 98
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLY38
CLY38-00
MWP-35
CLY38-05
CLY38-10
CLY38-nn:
QS9000
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for
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CLX30
CLX30-00
MWP-25
CLX30-05
CLX30-10
CLX30-nn:
QS9000
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