Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MG100G Search Results

    SF Impression Pixel

    MG100G Price and Stock

    Toshiba America Electronic Components MG100G2DL1

    POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG100G2DL1 8
    • 1 $78
    • 10 $75
    • 100 $75
    • 1000 $75
    • 10000 $75
    		Buy Now
    MG100G2DL1 5
    • 1 $156
    • 10 $140.4
    • 100 $140.4
    • 1000 $140.4
    • 10000 $140.4
    		Buy Now
    MG100G2DL1 4
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MG100G Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100G1AL3 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100G1AL3 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G1AL3 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G1AL3 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G1AL3 Toshiba TRANSISTOR,BJT POWER MODULE,DARLINGTON,450V V(BR)CEO,100A I(C) Scan PDF
    MG100G1FL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G1JL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G1JL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G2CH1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100G2CH1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G2CL1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100G2CL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100G2CL1 Toshiba TRANSISTOR BJT POWER MODULE Scan PDF
    MG100G2DL1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100G2DL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100G2DL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG100G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG100G1JL1 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)100


    Original     		PDF MG100G1JL1 HL080HD5 Code3-165 NumberTR00300165

    Untitled

    Abstract: No abstract text available
    Text: MG100G1FL1 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)100


    Original     		PDF MG100G1FL1 NumberTR00400005

    Untitled

    Abstract: No abstract text available
    Text: MG100G1AL2 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100


    Original     		PDF MG100G1AL2

    Untitled

    Abstract: No abstract text available
    Text: MG100G1AL3 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)100


    Original     		PDF MG100G1AL3 StyleTO-238var NumberTR00300001

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    MG100G1AL3

    Abstract: MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g
    Text: MG100G1AL3 — SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current: Gain : hpj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)


    OCR Scan     		PDF MG100G1AL3 00A//is MG100G1AL3 MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


    OCR Scan     		PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    MG100G2DL1

    Abstract: IP100A
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-In Free Wheeling Diode . High DC Current Gain : hpE=100 Min. (Ic=100A) . Low Saturation Voltage


    OCR Scan     		PDF MG100G2DL1 MG100G2DL1 IP100A

    MG100G2YL1

    Abstract: No abstract text available
    Text: G TR MODULE MG100G2YL1 SIUCON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 6 - F A S T - O N - T A B 4 110 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 M i n . (Ic=100A)


    OCR Scan     		PDF MG100G2YL1 MG100G2YL1

    MG100G1FL1

    Abstract: mg100g
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G1FL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?j;=100 Min. (Ic=100A) . Low Saturation Voltage


    OCR Scan     		PDF MG100G1FL1 00A//is MG100G1FL1 mg100g

    MG100G2CL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2CL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=l . Low Saturation Voltage


    OCR Scan     		PDF MG100G2CL1 MG100G2CL1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOD- TD 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A T0T7SSD DDltiDSS 0 90D 16022 SEMICONDUCTOR DT"33 '35 TOSHIBA GTR MODULE MG100G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG100G2YL1 G100H

    MG100G1AL3

    Abstract: mg100g1al MG100G1AL3 5 mg100g1 MG100G1AL3-5 GTR
    Text: MG100G1AL3 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hjrj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)


    OCR Scan     		PDF MG100G1AL3 MG100G1AL3 mg100g1al MG100G1AL3 5 mg100g1 MG100G1AL3-5 GTR

    mg100g2yl1

    Abstract: VA1C mg100g
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm M OTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 1 0 0 Min. (1 q = 100A)


    OCR Scan     		PDF MG100G2YL1 mg100g2yl1 VA1C mg100g

    333S

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO ¿ToJhìiu Dlf| T D T 7 E S 0 ODltjHbQ 4 f "TD 90D 16260 SEMICONDUCTOR UF-33-3f M G 1 0 0 G 1 J L 1 M G 1 0 0 G 2 C L 1 TECHNICAL DATA M G 1 0 0 G 2 D L 1 -0E¡> d cs W eight : 205g U n it in mm NVJvrWT


    OCR Scan     		PDF UF-33-3f 00Itati MG100G2DL1 333S

    MG150H2YL1

    Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
    Text: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)


    OCR Scan     		PDF H-101 MG150H2YL1 MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1

    MG15G1AL3

    Abstract: MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1
    Text: - 212 n p n . y - ' o Y - 7 l) - + - í ; U ' 5 f ' f ^ - * £ ¿ & R y - X « j & 't t t * á F f t T l, '. 6 ° iiá f t S d ít t i- ^ íá g i f ifi« ) > y 'J > h > * h 7 > y ^ ? l B U f fi^ íg K ft A L-1 r otu± h BK- 1 B L -I C c) x " r- 1 t B


    OCR Scan     		PDF H-101 MG15G1AL3 MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    MG150H2DL1

    Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn
    Text: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* l o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î


    OCR Scan     		PDF -25-C) MG50G2DL1 MG75G2DL1 H-101 MG150H2DL1 MG100G2DL1 MG30G2DL1 MG100G2DL MG100H2DL2 2-98C2A 408 npn

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1