MG150J1JS50 Search Results

MG150J1JS50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG150J1JS50		Toshiba	Half Bridge IGBT Power Module		Original	PDF
MG150J1JS50		Toshiba	GTR Module Silicon N Channel IGBT		Scan	PDF

MG150J1JS50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MG150J1JS50 Abstract: mg150j1 Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode	Original	PDF	MG150J1JS50 2-95A2A MG150J1JS50 mg150j1
Untitled Abstract: No abstract text available Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode	Original	PDF	MG150J1JS50 2-95A2A
MG150J1JS50 Abstract: No abstract text available Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode	Original	PDF	MG150J1JS50 2-95A2A MG150J1JS50
Untitled Abstract: No abstract text available Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode	Original	PDF	MG150J1JS50 2-95A2A
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	PDF	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	PDF	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
ic 393 Abstract: No abstract text available Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	PDF	MG150J1JS50 50J1JS50 30//s 15/iS ic 393
TRANSISTOR BJ 003 Abstract: MG150J1JS50 60A4 Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 0 5 .4* 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	PDF	MG150J1JS50 150J1JS50 VCEVQE--10V TRANSISTOR BJ 003 MG150J1JS50 60A4
Untitled Abstract: No abstract text available Text: T O S H IB A MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-ûi5.4±0.3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One	OCR Scan	PDF	MG150J1JS50 50J1JS50 TjS125
Untitled Abstract: No abstract text available Text: T O S H IB A MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-fSi4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	PDF	MG150J1JS50 50J1JS50
Untitled Abstract: No abstract text available Text: TOSHIBA MG150J1JS50 TOSHIBA GTR MODULE M f i i ^n SILICON N CHANNEL IGBT 11 K R n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One	OCR Scan	PDF	MG150J1JS50
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	PDF	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
G50Q2YS40 Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101	OCR Scan	PDF	GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js