Untitled
Abstract: No abstract text available
Text: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.36µs Max. (IC = 30A)
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MG30J6ES50
2-72A5A
000707EAA2
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MG30J6ES50
Abstract: mg30j
Text: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • High input impedance. • 6 IGBTs built into 1 package. • Enhancement-mode. • High speed: tf = 0.36µs Max. (IC = 30A)
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MG30J6ES50
2-72A5A
MG30J6ES50
mg30j
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Untitled
Abstract: No abstract text available
Text: MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG30J6ES50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.36µs Max. (IC = 30A)
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MG30J6ES50
2-72A5A
000707EAA2
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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Sine wave PWM DC to AC Inverter ics
Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
Text: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package
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TA7326P
TA7326F
TA7327P
TB1004AF
TB1010F
TB1012F
TB1022F
TA7327P
SSOP10
GT60M303
Sine wave PWM DC to AC Inverter ics
ULN2803 PIN CONFIGURATION
TA8316S
tc9653an
HIGH VOLTAGE DIODE for microwave ovens
ta7606p
induction heating ta8316s
TLP250 low side pwm driver
relay driver ic ULN2803
2SK3201
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Untitled
Abstract: No abstract text available
Text: ＰＤＦエラー報告書 該当ページ エラー項目 形名に変な文字が明記されている ヘッダに「ＴＯＳＨＩＢＡ」ロゴや形名が明記されていない フッタに更新日付が明記されていない フッタの更新日付が古い 三ヶ月以上
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MG30J6ES50
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mg30j6es50
Abstract: No abstract text available
Text: T O SH IB A MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.
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OCR Scan
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MG30J6ES50
14-FAST-ON-TAB
15//s
2-72A5A
961001EAA1
mg30j6es50
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode. High Speed : tf=0.36,us Max. (Ic = 30A)
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MG30J6ES50
15//s
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.
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MG30J6ES50
--30A,
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.
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OCR Scan
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MG30J6ES50
14-FAST-ON-TAB
15//s
2-72A5A
961001EAA1
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Toshiba transistor Ic 100A
Abstract: exo 30a MG30J6ES50
Text: TOSHIBA MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.
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MG30J6ES50
30J6ES
14-FAST-ON-TAB
2-72A5A
vGE15V
Toshiba transistor Ic 100A
exo 30a
MG30J6ES50
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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