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    Toshiba America Electronic Components MG75M2YK1

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    MG75M Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75M OKI Electronic Components General PLL, 0.16um Phase-Locked Loop (SPLL16x) Macrofunction Family Original PDF
    MG75M1AL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75M1BK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75M1BK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75M2CK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75M2CK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75M2CK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75M2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75M2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75M2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75M2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1000V, 75A Scan PDF
    MG75M2YK1A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG75M2YL1 Unknown Scan PDF
    MG75MB06-TQFP100 OKI Semiconductor 0.16um Customer Structured Array Original PDF
    MG75MCSA OKI Electronic Components General PLL, 0.16um Phase-Locked Loop (SPLL16x)Macrofunction Family Original PDF

    MG75M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG73M

    Abstract: MG74M MG75M
    Text: 0.16µm ASICs MG73M/74M/75M FAMILY LISTING EA Base No. of No. of MG73M Family MG74M Family MG75M Family Array Pads Raw Gates 3LM Usable Gates 4LM Usable Gates 5LM Usable Gates MG7xMB06 148 554,880 287,705 416,160 471,648 MG7xMB08 188 913,856 445,440 594,006


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    PDF MG73M/74M/75M MG73M MG74M MG75M MG7xMB06 MG7xMB08 MG7xMB10 MG7xMB12 MG7xMB14 MG7xMB16

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


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    PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    MG75M

    Abstract: IC ATA 2398 oki cross ARM920T MG73M MG74P MG75P virage virage .spec
    Text: D ATA SHEET O K I A S P RELIMINARY I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


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    PDF MG73M/74M/75M MG7M/74M/75M MG75M IC ATA 2398 oki cross ARM920T MG73M MG74P MG75P virage virage .spec

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


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    PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    oki cross

    Abstract: ARM920T MG73M MG74M MG75M
    Text: DATA SHEET O K I A S I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––


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    PDF MG73M/74M/75M MG73M/74M/75M oki cross ARM920T MG73M MG74M MG75M

    MG75M2CK1

    Abstract: tkp7
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


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    PDF MG75M2CK1 MG75M2CK1 tkp7

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm INDUCTION HEATING APPLICATIONS. 5 0 ± 0 .5 . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=100 Min. (Ic=75A) . Low Saturation Voltage : VCE(sat)=2V(Max.)(IC=75A)


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    PDF MG75M1AL1

    MG75M1BK1

    Abstract: No abstract text available
    Text: GTR MODULE MG75M1BK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. B1 FEATURES: . The Collector is Isolated from Case. . High DC Current Gain : hFE=75 Min. (Ic=75A) \ Cl \ . Low Saturation Voltage: VcE(sat)“2.5(Max.) (Ic=75A


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    PDF MG75M1BK1 MG75M1BK1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OP T03- ^ 0 1 7 2 5 0 9097250 TOSHIBA DISCRETE/OPTO ¿/iuhihi 90D SEMICONDUCTOR 16339 DDltaa*! L DT'23'3£ TOSHIBA G-TR MODULE MG75M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


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    PDF MG75M2CK1 75M2c TCH755D DD1L343 r-33-35 0Dlb344 T-33-35'

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


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    PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    U1W npn

    Abstract: NPN VCEo 1000V transistor yk
    Text: MG75M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=75A)


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    PDF MG75M2YK1 U1W npn NPN VCEo 1000V transistor yk

    LC3000

    Abstract: MG75M1AL1
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M1AL1 HIGH P OWER S W I T C H I N G APPLICATIONS. I NDUCTION H E A TING APPLICATIONS. . With Built-in Free Wheeling Diode. . High DC Current Gain : h]rj?=100 Min. (Ic=75A) . Low Saturation Voltage : VCE(sat)=2V(Max.)(IC=75A)


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    PDF MG75M1AL1 LC3000 MG75M1AL1

    MG150H2YL1

    Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
    Text: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)


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    PDF H-101 MG150H2YL1 MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1

    MG15G1AL3

    Abstract: MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1
    Text: - 212 n p n . y - ' o Y - 7 l) - + - í ; U ' 5 f ' f ^ - * £ ¿ & R y - X « j & 't t t * á F f t T l, '. 6 ° iiá f t S d ít t i- ^ íá g i f ifi« ) > y 'J > h > * h 7 > y ^ ? l B U f fi^ íg K ft A L-1 r otu± h BK- 1 B L -I C c) x " r- 1 t B


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    PDF H-101 MG15G1AL3 MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


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    PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    MG15G1AL3

    Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
    Text: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15


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    PDF 2-22B1A MG15G1AL3 2-33F1A MG15H1AL1 2-33D1A MG25M1BK1 2-33C1A MG30G1BL3 H-101 MG15G1AL3 MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-22b1a MG200

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


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    PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


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    PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


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    PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG150H2YL1

    Abstract: MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1
    Text: -221 sg - 2 p V cc * * 9 & U a # l= 0 . 5 * 4 • y ^ > r ^ r i * E n « t y p . « 0 u z . T . tâ fo m Œ (V X 'f I c il + I B on ? • 3 V y 91ï ï y j t - V m & iK i u s) I B V BE V cE x i = 2 5°C ) I b; V cc R i , t . (V ) I F ( u s) % 1 p V be


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    PDF -25-C) 2-80B1A MG75M2CK1 2-108A2A MG75M2YK1 KG75Q2YK1 H-101 MG150H2YL1 MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


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    PDF MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45