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Mitsubishi Electric MGF0905A01 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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MGF0905 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF0905		Mitsubishi	L,S BAND POWER GaAs FET		Scan	PDF
MGF0905		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
MGF0905		Unknown	FET Data Book		Scan	PDF
MGF0905A		Mitsubishi	L,S BAND POWER GaAs FET		Original	PDF
MGF0905A		Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET		Scan	PDF

MGF0905 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mitsubishi Abstract: MGF0905A mgf09 Band Power GaAs FET s band Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004	Original	June/2004 MGF0905A mitsubishi MGF0905A mgf09 Band Power GaAs FET s band	PDF
Untitled Abstract: No abstract text available Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION	Original	MGF0905A MGF0905A, 65GHz 26dBm 800mA	PDF
MGF0905A Abstract: IDS800 Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3	Original	MGF0905A MGF0905A, 65GHz 26dBm 800mA MGF0905A IDS800	PDF
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs FET with an N-channel schottky U n it: m illim eters inches gate, is designed for use in U H F band amplifiers. FEATURES • High output power	OCR Scan	MGF0905A 34dBm 65GHz, 26dBm	PDF
GF-17 Abstract: gw 340 GD10 MGF0905A MGF1601 Text: HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type MGF1601B MG F1801B MQF0904A MGF0905A MGF090BB MQF0907B MQF2407A MGF241SA MGF2430A MGF244B PldB dBm 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB)	OCR Scan	/09xxx/24xxx GD-10 GF-21 GF-17 MGF1601B F1801B gw 340 GD10 MGF0905A MGF1601	PDF
MGF0905A Abstract: No abstract text available Text: A m its u b is h i ELECTRONIC DEVICE GROUP Die_ MGFC0904, MGFC0905 Package MGF0904A, MGF0905A DESCRIPTION MGFC0905/MGF0905A FEATURES The MGF0904A and MGF0905A GaAs FETs with N-channel Schottky gates, are designed for use in UHF through S-band amplifiers.	OCR Scan	MGF0904A MGF0905A MGFC0904/MGF0904AFEATURES 600mW MGFC0904, MGFC0905 MGF0904A, MGF0905A MGFC0905/MGF0905A 200mW	PDF
MGF2430A Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E	OCR Scan	12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445	PDF
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A	PDF
MGF1202 Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1 Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)	OCR Scan	MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 450220AB) MG30N10E 05typ O-220AB) MG30N06EL MGF1202 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> Í M G F0905A ! L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs F E T w ith an N-channel schottky U n it: m illim eters [inches gate, is designed for use iri U H F band amplifiers. FEATURES	OCR Scan	F0905A 26dBm 26dBm	PDF