Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC36V7785A
MGFC36V7785A
-45dBc
25dBm
|
MGFC36V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC36V7785A
MGFC36V7785A
25dBm
10MHz
|
MGFC36V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
|
Original
|
PDF
|
MGFC36V7785A
MGFC36V7785A
25dBm
10MHz
June/2004
|
Untitled
Abstract: No abstract text available
Text: MGFC36V7785 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)2.8 P(D) Max. (W)25 Maximum Operating Temp (øC)175 I(DSS) Min. (A)2.0Â I(DSS) Max. (A)2.8 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.
|
Original
|
PDF
|
MGFC36V7785
|
Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
PDF
|
MGFC36V7785A
MGFC36V7785A
-45dBc
25dBm
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
PDF
|
M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
|
BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
|
Original
|
PDF
|
O-251AA
O-247AC
O-220AB
PowerSO-20
BUZ90af
hv82
MGF4919G-01
MGF4919G
MGF2407A-01
BUZ80AF1
6n60
MGF1302-15
SSP 50N06
2n10l
|
MGFC36V7785A
Abstract: fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The
|
OCR Scan
|
PDF
|
FC36V7785A
MGFC36V7785A
45dBc
ltem-01
ltem-51
fet 30 f 124
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically
|
OCR Scan
|
PDF
|
FC36V7785A
MGFC36V7785A
45dBc
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A S p"""*” 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched U n it : m illim eters inches) GaAs power FET especially designed for use in 7.7—8.5GHz
|
OCR Scan
|
PDF
|
MGFC36V7785A
MGFC36V7785A
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z
|
OCR Scan
|
PDF
|
MGFC36V7785A
36V7785A
|
mitsubishi f
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed
|
OCR Scan
|
PDF
|
MGFC36V7785A
MGFC36V7785A
--51D
45dBc
Item-01
Item-51
mitsubishi f
|
MGF4404A
Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D
|
OCR Scan
|
PDF
|
MGF2430
MGF2430A
MGF2445
MGF4301A
MGF4302A
MGF4303A
MGF4304A
MGFC36V6471
MGFC36V7177
MGFC36V7785
MGF4404A
MGF4403A
12GHz
MGF4402A
MGF4401A
MGFK25M4045
|
MGFC36V6471
Abstract: MGFC36V5964 MGFC36V4450
Text: A m it s u b is h i MGFC36VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC36VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50£2 • High output power
|
OCR Scan
|
PDF
|
MGFC36VXXXX
MGFC36VXXXX
MGFC36V5258-01
MGFC36V5258-51
MGFC36V5964-01
MGFC36V5964-51
MGFC36V6471-01
MGFC36V6471-51
MGFC36V7177-01
MGFC36V7177-51
MGFC36V6471
MGFC36V5964
MGFC36V4450
|
|
|
3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
|
OCR Scan
|
PDF
|
|
